• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.156-158
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• 1998

This paper describes the preparation of boron-doped polycrystalline diamond thin film whose electrical resitivity is lower than $10^{-1}\Omega$cm. The 1$\times$1$\textrm{mm}^2$ microelectrodes, its conducting line with 0.2mm wide and 0.5$\times$0.5$\textrm{mm}^2$ pads was patterned by reactive ion beam etching. A glucose microsensor based on diamond film microelectrode and pyramidal containment produced on silicon by anisotropic etching was developed. Its advantages are high sensitivity and high stability.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.268-272
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• 2015

We report the systematic study to reduce extrinsic doping in graphene grown by chemical vapor deposition (CVD). To investigate the effect of crystallinity of graphene on the extent of the extrinsic doping, graphene samples with different levels of crystal quality: poly-crystalline and single-crystalline graphene (PCG and SCG), are employed. The graphene suspended in air is almost undoped regardless of its crystallinity, whereas graphene placed on an $SiO_2/Si$ substrate is spontaneously p-doped. The extent of p-doping from the $SiO_2$ substrate in SCG is slightly lower than that in PCG, implying that the defects in graphene play roles in charge transfer. However, after annealing treatment, both PCG and SCG are heavily p-doped due to increased interaction with the underlying substrate. Extrinsic doping dramatically decreases after annealing treatment when PCG and SCG are placed on the top of hexagonal boron nitride (h-BN) substrate, confirming that h-BN is the ideal substrate for reducing extrinsic doping in CVD graphene.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.185-186
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• 2005

Intrinsic gettering is usually used to improve wafer quality which is an important factor for reliable ULSI devices. The two-step annealing method was adopted in order to investigate interactions between oxygens and secondary defects during oxygen precipitation process in lightly and heavily boron doped silicon wafers with high energy $^{11}B^+$ ion implantation. Secondary defects were inspected nearby the projected range by high resolution transmission electron microscopy. Oxygen pileup was measured in the vicinity of the projected range by secondary ion mass spectrometry for heavily boron doped silicon wafers.

• Journal of Electrochemical Science and Technology
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• v.15 no.2
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• pp.261-267
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• 2024

An unconventional fabrication technique of nanoelectrode was developed using atomic force microscopy (AFM) and hydrogel. Until now, the precise control of electroactive area down to a few nm² has always been an obstacle, which limits the wide application of nanoelectrodes. Here, the nanometer-sized contact between the boron-doped diamond (BDD) as conductive AFM tip and the agarose hydrogel as solid electrolyte was well governed by the feedback amplitude of oscillation in the non-contact mode of AFM. Consequently, this low-cost and feasible approach gives rise to new possibilities for the fabrication of nanoelectrodes. The electroactive area controlled by the set point of AFM was investigated by cyclic voltammetry (CV) of the ferrocenmethanol (FcMeOH) combined with quasi-solid agarose hydrogel as an electrolyte. Single copper (Cu) nanoparticle was deposited at the apex of the AFM tip using this platform whose electrocatalytic activity for nitrate reduction was then investigated by CV and Field Emission-Scanning Electron Microscopy (FE-SEM), respectively.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.7-12
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• 1995

• Proceedings of the Korean Magnestics Society Conference
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• 2014.05a
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• pp.130-130
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• 2014

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.163.2-163
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• 2003

• Proceedings of the Korean Magnetic Resonance Society Conference
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• 1999.06a
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• pp.6-6
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• 1999

• 한국초전도학회:학술대회논문집
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• 2008.08a
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• pp.13-13
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• 2008

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.2
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• pp.97-105
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• 1985

Phosphorus and boron diffusion from doped PECVD oxide films into silicon have been studied. CVD PSG was also prepared to parallelly compare the diffusion characteristics of CVD PSG with that in PECVD PSG, The phosphorus diffusion experiments were performed in N2 and O2 ambient at the temperatures of 100$0^{\circ}C$, 105$0^{\circ}C$ and 110$0^{\circ}C$ The parameters of boron diffusion have been investigated from the doped film prepared by changing B2 H6 flow rate and deposition temperature. The diffusivities and diffusion profiles of the dopant into silicon were calculated by applying Barry's model using the measured parameters such as diffusion depth and surface concentration.