Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.07a
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- Pages.185-186
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- 2005
Interaction between Oxygens and Secondary Defects Induced in Silicon by High Energy $B^+$ Ion Implantation and Two-Step Annealing
- Yoon, Sahng-Hyun (Department of Electrical Engineering, Doowon Technical College) ;
- Jeon, Joon-Hyung (Department of Electrical Engineering, Doowon Technical College) ;
- Kim, Kwang-Tea (Department of Electrical Engineering, Doowon Technical College) ;
- Kim, Hyun-Hoo (Department of Electrical Engineering, Doowon Technical College) ;
- Park, Chul-Hyun (Department of Electrical Engineering, Chungbuk Nat'l Univ.)
- Published : 2005.07.07
Abstract
Intrinsic gettering is usually used to improve wafer quality which is an important factor for reliable ULSI devices. The two-step annealing method was adopted in order to investigate interactions between oxygens and secondary defects during oxygen precipitation process in lightly and heavily boron doped silicon wafers with high energy