• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.9
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• pp.736-742
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• 1991

N$^{+}$poly gate NMOSFETs and p$^{+}$ poly gate (surface type) PMOSFETs with three different gate oxides(SiO2, NO, and ONO) were fabricated. The rapid thermal nitridation and reoxidation techniques have been applied to gate oxide formation. The current drivability of the ONO NMOSFET shows larger values than that of the SiO2 NMOSFET. The snap-back occurs at a lower drain voltage for SiO$_2$ cases for ONO NMOSFET. Under the maximum substrate current bias conditions, hot-carrier effects inducting threshold voltage shift and transconductance degradation were investigated. The results indicate that ONO films exhibit less degradation in terms of threshold voltage shift. It was confirmed that the ONO samples achieve good improvement of hot-carrier immunity. In a SiO$_2$ SC-PMOSFET, with significant boron penetration, it becomes a depletion type (normally-on). But ONO films show excellent impurity barrier properties to boron penetration from the gate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.208-212
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• 2008

This paper reports physical properties of in situ boron doped silicon films made from boron source gas and silane ($SiH_4$) gas in a conventional low-pressure chemical vapor deposition vertical furnace. If the p-type polysilicon is formed by boron implantation into undoped polysilicon, the plasma nitridation (PN) process is added on the oxide in order to suppress boron penetration that can be caused during the thermal treatments used in fabrication. In-situ boron doped polysilicon deposition can complete p-type polysilicon film with only one deposition process and need not the PN process, because there is not interdiffusion of dopant at the intermediate temperatures of the subsequent steps. Since in-situ boron doped polysilicon films have higher work function than that of n-type polysilicon and they are compatible with the underlying oxide, they may be promising materials for improving memory cell characteristics if we make its profit of these physical properties.

• Journal of Welding and Joining
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• v.29 no.1
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• pp.107-114
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• 2011

CP steel was developed to reduce the weight and increase the strength of car body. When it was welded using state-of-the-art disk laser welding, the effected of boron on the microstructure and hardness were investigated. Welding power was fixed at 3.5kW and welding speeds were 4,8 and 12m/min. Full penetration occurred in welding speed of 12m/min and weld bead was almost unchanged with boron contents. But the welding speed increased, the upper and lower bead were narrowed. In a welding speed of more than 8m/min, underfill defects were formed on the bead bottom. The hardness of weld zone was somewhat fluctuation in fusion zone and HAZ showed the highest hardness values. The hardness of each region showed little change with the boron contents, and softening phenomenon occurred in the HAZ near the base metal regardless of the boron contents.

• Journal of Welding and Joining
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• v.29 no.1
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• pp.90-98
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• 2011

Al-Si coated Boron steel and Zn coated DP steel were welded using DISK laser and the microstructure and hardness of the weld were investigated. Full penetration was obtained, when the welding speed was lower than 4m/min. In the specimen welded with laser power of 3 kW and welding speed of 2 m/min, the hardness was the highest in the heat affect zone in the boron steel (HAZ-B) and that of the heat affect zone in the DP steel (HAZ-D) was lower than HAZ-B. The hardness of fusion zone was in between those of HAZ-B and HAZ-D. The decreased hardness from each HAZ to base metal(BM) could be explained that ferrite contents increases when access to the BM. The variation of hardness in the welds could be explained by the difference of microstructure, that is, full martensite in HAZ-B, mixture of martensite and bainite in the fusion zone, and the mixture of martensite, ferrite and bainite in HAZ-D.

• Journal of Conservation Science
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• v.7 no.2
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• pp.60-67
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• 1998

The effects of moisture content (MC) and diffusion period on the diffusion of boron from borate rod through Pinus densiflora and P. koraiensis were investigated as a preliminary research of integrated remedial treatment for heritage wooden structures using borate rod. After equilibrating MCs of samples (15, 25, and 40%), borate rod (1,000 mg) was inserted into the sample, and stored for diffusion of boron at room temperatures ($23^{\circ}C$) for 2, 4, 8, and 12 weeks. Wafers were serially cut at constant intervals from rod treatment point and the boron penetration through longitudinal and transverse direction was measured by staining with boron indicator. For boron diffusion, MC above fiber saturation point was needed, and the diffusion rates increased with time. The fastest rates of diffusion were observed in longitudinal direction, followed by the radial and then the tangential direction. The rates of diffusion in all directions were the fastest in P. koraiensis. In P. densiflora, the diffusion rates through heartwood was faster than that in sapwood in longitudinal direction and vice versa in transverse direction. Based on the best result of this study, optimal space between rod insertion points could be recommended as follows; approximately 120 mm for P. koraiensis and heartwood of P. densiflora, 60 mm for sapwood of P. densiflora in longitudinal direction, and approximately 30 mm for all species tested in transverse direction. However, the effect of rod size and long-term exposure for diffusion on boron movement should be fully investigated for the accurate evaluation of optimal space between rod holes.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.38 no.12
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• pp.1373-1377
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• 2014

Hot-stamping is a method of obtaining ultrahigh-strength steel by simultaneously forming and cooling boron steel in a press die after it has been heated at $900^{\circ}C$ or above. After heat treatment, boron steel has a strength of 1500 MPa or more. This material ensures a high level of quality because it overcomes the spring-back phenomenon, which is a problem associated with high-strength steel materials, and the degree of dimensional precision is improved by 90 or more because of the good formability compared with existing types of steel. In this study, the welding characteristics were identified through the butt and lap welding of hot-stamped steel using a disk laser. Full penetration was obtained at a faster speed with butt welding compared to lap welding, and a white band was observed in every specimen.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.3
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• pp.233-237
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• 2002

A giga-bit DRAM(dynamic random access memory) technology with W/WNx/poly-Si dual gate electrode is presented in 7his papers. We fabricated $0.16\mu\textrm{m}$ CMOS using this technology and succeeded in suppressing short-channel effects. The saturation current of nMOS and surface-channel pMOS(SC-pMOS) with a $0.16\mu\textrm{m}$ gate was observed 330 $\mu\A/\mu\textrm{m}$ and 100 $\mu\A/\mu\textrm{m}$ respectively. The lower salutation current of SC-pMOS is due to the p-doped poly gate depletion. SC-pMOS shows good DIBL(dram-induced harrier lowering) and sub-threshold characteristics, and there was no boron penetration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.586-591
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• 2004

We studied the dependence of hot-tarrier-induced degradation characteristics on nitrogen concentration in NO(Nitrided-Oxide) gate of nMOS, under ac and dc stresses. The $\Delta$V$_{t}$ and $\Delta$G$_{m}$ dependence of nitrogen concentration were observed, We observed that device degradation was suppressed significantly when the nitrogen concentration in the gate was increased. Compared to $N_2$O oxynitride, NO oxynitride gate devices show a smaller sensitivity to ac stress frequency. Results suggest that the improved at-hot carrier immunity of the device with NO gate may be due to the significantly suppressed interface state generation and neutral trap generation during stress.ess.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.1001-1006
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• 2005

A new fabrication method is proposed to form the stacked polysilicon gate by nitridation in $N_2$ atmosphere using conventional LP-CVD system. Two step stacked layers with an amorphous layer on top of a polycrystalline layer as well as three step stacked layers with polycrystalline films were fabricated using the proposed method. SIMS profile showed that the proposed method would successfully create the nitrogen-rich layers between the stacked polysilicon layers, thus resulting in effective retardation of dopant diffusion. It was observed that the dopants in stacked films were piled-up at the interface. TEM image also showed clear distinction of stacked layers, their plane grain size and grain mismatch at interface layers. Therefore, the number of stacked polysilicon layers with different crystalline structures, interface position and crystal phase can be easily controlled to improve the device performance and reliability without any negative effects in nano-scale CMOSFETs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.569-574
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• 2007

In this paper, the reliability (NBTI degradation: ${\Delta}V_{th}$) and device characteristic of nano-scale PMOSFET with plasma nitrided oxide (PNO) is characterized in depth by comparing those with thermally nitrided oxide (TNO). PNO case shows the reduction of gate leakage current and interface state density compared to TNO with no change of the $I_{D.sat}\;vs.\;I_{OFF}$ characteristics. Gate oxide capacitance (Cox) of PNO is larger than TNO and it increases as the N concentration increases in PNO. PNO also shows the improvement of NBTI characteristics because the nitrogen peak layer is located near the $Poly/SiO_2$ interface. However, if the nitrogen concentration in PNO oxide increases, threshold voltage degradation $({\Delta}V_{th})$ becomes more degraded by NBT stress due to the enhanced generation of the fixed oxide charges.