• Title/Summary/Keyword: bondwire

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The Damage of Microcontroller Devices due to Coupling Effects under High Power Electromagnetic Wave by Magnetron (고출력 전자기파의 커플링 효과에 의한 마이크로 컨트롤러의 손상)

  • Hong, Joo-Il;Hwang, Sun-Mook;Huh, Chang-Su
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.12
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    • pp.2263-2268
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    • 2008
  • We investigated the malfunction and destruction characteristics of microcontroller devices under high power electromagnetic(HPEM) wave by magnetron. HPEM was rated at a microwave output of 0 to 1,000 W, at a frequency of 2,450${\pm}$50 MHz and was radiated from the open-ended standard rectangular waveguide(WR-340) to free space. The influence of different reset-, clock-, data-, and power supply-line lengths has been tested. The variation of the line length was done with flat cables. The susceptibility of the tested microcontroller devices was in general much influenced by clock-, reset-, and power supply-line length, little influenced by data-line length. Further the line length was increased, the malfunction threshold was decreased as expected, because more energy couples to the devices. The surfaces of the destroyed microcontroller devices were removed and the chip conditions were investigated with microscope. The microscopic analysis of the damaged devices showed component and bondwire destructions such as breakthroughs and melting due to thermal effects. The obtained results are expected to provide fundamental data for interpreting the combined mechanism of microcontroller devices in an intentional microwave environment.

E-Band Bond-Wire Modeling and Matching Network Design (E-대역 본드와이어 모델링 및 정합회로 설계)

  • Kim, Kimok;Kang, Hyunuk;Lee, Wooseok;Choi, Doohun;Yang, Youngoo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.29 no.6
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    • pp.401-406
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    • 2018
  • In this paper, we present E-band bond-wire modeling and a matching network to compensate for the effect of the bond-wire. The impedance of the bond-wires is extracted using three-dimensional electromagnetic simulation. The matching network was designed using a simple structure. The implemented matching network was verified with a commercial 71~81 GHz LNA IC and an interconnection based on the WR-12 waveguide. The matching network increases the transmission coefficient of the system by up to 4.5 dB, power gain by up to 3.12 dB, $P_{1dB}$ by up to 2.2 dB, and improves the gain flatness by ${\pm}1.07dB$.

Damage Effect and Delay Time of CMOS Integrated Circuits Device with Coupling Caused by High Power Microwave (도선에 커플링 되는 고출력 전자파에 의한 CMOS IC의 피해 효과 및 회복 시간)

  • Hwang, Sun-Mook;Hong, Joo-Il;Han, Seung-Moon;Huh, Chang-Su
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.6
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    • pp.597-602
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    • 2008
  • This paper examines the damage effect and delay time of CMOS integrated circuits device with coupling caused by high power microwaves. The waveguide and magnetron was employed to study the influence of high power micro-waves on CMOS inverters. The CMOS inverters were composed of a LED circuit for visual discernment. Also CMOS inverters broken by high power microwave is observed with supply current and delay time. When the power supply current was increased 2.14 times for normal current at 9.9 kV/m, the CMOS inverter was broken by latch-up. Three different types of damage were observed by microscopic analysis: component, onchipwire, and bondwire destruction. Based on the results, CMOS inverters can be applied to database to elucidate the effects of microwaves on electronic equipment.

The Susceptibility of LNA(Low Noise Amplifier) Due To Front-Door Coupling Under Narrow-Band High Power Electromagnetic Wave (안테나에 커플링되는 협대역 고출력 전자기파에 대한 저잡음 증폭기의 민감성 분석)

  • Hwang, Sun-Mook;Huh, Chang-Su
    • Journal of IKEEE
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    • v.19 no.3
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    • pp.440-446
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    • 2015
  • This study has examined susceptibility of LNA(Low Noise Amplifier) due to Front-Door Coupling under Narrow-Band high power electromagnetic wave. M/DFR(Malfunction/Destruction Failure Rate) was measured to investigate the diagnostic of IC test. In addition, decapsulation analysis was used to understand the inside of the chip state in LNA devices. The experiments is employed as an open-ended waveguide to study the destruction effects of LNA using a 2.45 GHz Magnetron as a high power electromagnetic wave. The susceptibility level of LNA was assessed by electric field strength, and its failure modes were observed. The malfunction of LNA device has showed as the type of self-reset and power-reset. The electric field strength of malfunction threshold is 524 V/m and 1150 V/m respectively. Also, he electric field of destruction threshold is 1530 V/m. Three types of damaged LNA were observed by decapsulation analysis: component, onchipwire, and bondwire destruction. Based on these results, the susceptibility of the LNA can be applied to a database to help elucidate the effects of microwaves on electronic equipment.

Wideband Crosstalk Analysis of Coupled Bondwires for High-Speed Plastic Packaging (초고속 플라스틱 패키지를 위한 본딩와이어의 광대역 혼신 해석)

  • 윤상기;이해영
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.10
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    • pp.22-28
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    • 1998
  • Signal transmission and crosstalk of coupled bondwires buried in plastic packages are analyzed using the Method of Moments and the Fourier Transform algorithm. It is also shown that the quasi-static crosstalk model of SPICE is inappropriate for designing the high-speed plastic packages. Plastic packaging material, increasing the self and mutual capacitances, is found to be helpful for the signal transmission integrity due to the dielectric compensation effect. However, it is also observed that the plastic material increases the crosstalk due to the radiation-enhanced mutual coupling effect. By investigating the geometrical and material dependence of the pulse transmission and crosstalk, it is found that the radiation-enhanced coupling effect is significant for most of typical bondwire geometries and plastic package materials. These calculation results can be effectively used for designing plastic packages of high-speed digital IC's and monolithic RFIC's.

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Millimeter-wave Ceramic Package having Embedded Metal Sheet (도체판이 삽입된 밀리미파 세라믹 패키지)

  • 김진태;서재옥;방현국;박성대;조현민;강남기;이해영
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.41 no.8
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    • pp.19-26
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    • 2004
  • High performance packages must provide excellent transmission characteristics. In face-up ceramic packages, however, parasitic characteristics of bondwires are not negligible at millimeter-wave frequencies. Consequently, the electrical performance of ceramic packages is degraded. In をis paper, we propose a new millimeter-wave ceramic package feed-through having Embedded Metal Sheets (EMS). The package that contains double-bondwire interconnections is analyzed by the FEM (Finite Element Method) and measured from 20 to 50GHz. As a result, the proposed package having Embedded Metal Sheets (EMS) achieved 0.85dB, 0.4dB insertion loss improvement on the conventional and the double bondwires buried in epoxy ( $\varepsilon_{{\gamma}}$/ = 4) ceramic package respectively to 47GHz. This improved ceramic package will be useful for MMICs modules and small ceramic packages developments.amic packages developments.