Browse > Article

The Damage of Microcontroller Devices due to Coupling Effects under High Power Electromagnetic Wave by Magnetron  

Hong, Joo-Il (인하대학교 전기공학과)
Hwang, Sun-Mook (인하대학교 전기공학과)
Huh, Chang-Su (인하대학교 전기공학과)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.57, no.12, 2008 , pp. 2263-2268 More about this Journal
Abstract
We investigated the malfunction and destruction characteristics of microcontroller devices under high power electromagnetic(HPEM) wave by magnetron. HPEM was rated at a microwave output of 0 to 1,000 W, at a frequency of 2,450${\pm}$50 MHz and was radiated from the open-ended standard rectangular waveguide(WR-340) to free space. The influence of different reset-, clock-, data-, and power supply-line lengths has been tested. The variation of the line length was done with flat cables. The susceptibility of the tested microcontroller devices was in general much influenced by clock-, reset-, and power supply-line length, little influenced by data-line length. Further the line length was increased, the malfunction threshold was decreased as expected, because more energy couples to the devices. The surfaces of the destroyed microcontroller devices were removed and the chip conditions were investigated with microscope. The microscopic analysis of the damaged devices showed component and bondwire destructions such as breakthroughs and melting due to thermal effects. The obtained results are expected to provide fundamental data for interpreting the combined mechanism of microcontroller devices in an intentional microwave environment.
Keywords
High power electromagnetic; Microcontroller; Malfunction; Destruction; Coupling effect;
Citations & Related Records

Times Cited By SCOPUS : 1
연도 인용수 순위
1 Clayborne D. Taylor, D. V. Giri, "High-Power Microwave Systems and Effects", Tayloer & Francis, Washington D. C., 1994
2 D. V. Giri, "High-power Electromagnetic Radiators Nonlethal Weapons and Other Applications", Harvard University Press, Cambridge, Massachusetts, and London, England, pp. 36-40, 2004
3 E. A. Amerasekera, D. S. Campbell, "Failure Mechanisms in Semiconductor Devices", John Wiley & Sons, 1987
4 M. Camp, H. Garbe, D. Nitsch, "UWB and EMP Susceptibility of Modern Electronics", Electromagnetic Compatibility, 2001 IEEE International Symposium on, Vol. 2, pp. 1015-1020, Aug., 2001
5 S. Korte, M. Camp, H. Garbe, "Hardware and Software Simulation of Transient Pulse Impact on Integrated Circuits", Electromagnetic Compatibility, 2005 IEEE International Symposium on, Vol. 2, pp. 489-494, Aug., 2005
6 Steven H. Voldman, "The Impact of Technology Scaling on ESD Robustness of Aluminum and Copper Interconnects in Advanced Semiconductor Technologies", Components, Packaging, and Manufacturing Technology, IEEE Transactions on, Vol. 21, No.4, pp. 265-277, Oct., 1998   DOI   ScienceOn
7 C. H. Diaz, S. M. Kang, C. Duvvury, "Modeling of Electrical Overstress in Integrated Circuits", Kluwer Academic Publishers, Boston, 1995
8 M. Camp, H. Garbe, "Influence of Operation- and Program-States on the Breakdown Effects of Electronics by EMP and UWB", Electromagnetic Compatibility, 2003 IEEE International Symposium on, Vol. 2, pp. 1032-1035, May, 2003
9 M. Camp, H. Garbe, F. Sabath, "Coupling of Transient Ultra Wide Band Electromagnetic Fields to Complex Electronic Systems", Electromagnetic Compatibility, 2005 IEEE International Symposium on, Vol. 2, pp. 483-488, Aug., 2005