• Journal of Adhesion and Interface
• /
• v.3 no.1
• /
• pp.37-42
• /
• 2002

Adhesives are becoming increasingly accepted for advanced engineering/boding tasks. Therefore the understanding of the basic principles and the benefits of elastic bonding and structural bonding respectively is of utmost importance. Structural bonding means adhesive performance in load-bearing environments. Furthermore. the time to achieve handling strength has an impact on the economics of an assembly line. The paper gives briefly a summary about the fundamentals of elastic bonding and discusses different adhesive systems in the context of handling strength. Hereby the focus lies on the Warm Melt Technology, and its potential is compared to standard adhesives (l-part, 2-part and Booster Technology, a special 2-C system). Examples illustrate their economical benefits. Main Points : ${\bullet}$ The basic principles and benefits of elastic bonding ${\bullet}$ Warm-melt Technology in comparison with standard adhesives ${\bullet}$ Handling strength an economic issue ${\bullet}$ Combination with Booster-Technology, a special 2-C PUR system ${\bullet}$ Presentation of real world applications Learning Objectives: ${\bullet}$ Fundamentals of elastic bonding ${\bullet}$ Warm-melt Technology: correlation between chain length and cristallinity ${\bullet}$ Handling strength and curing speed of various systems in comparison ${\bullet}$ Real world applications illustrate the potential of the Warm-melt Technology.

• Journal of the Microelectronics and Packaging Society
• /
• v.25 no.4
• /
• pp.9-15
• /
• 2018

This paper shows the principles and characteristics of the transient liquid phase (TLP) bonding technology for power modules packaging. The power module is semiconductor parts that change and manage power entering electronic devices, and demand is increasing due to the advent of the fourth industrial revolution. Higher operation temperatures and increasing current density are important for the performance of power modules. Conventional power modules using Si chip have reached the limit of theoretical performance development. In addition, their efficiency is reduced at high temperature because of the low properties of Si. Therefore, Si is changed to silicon carbide (SiC) and gallium nitride (GaN). Various methods of bonding have been studied, like Ag sintering and Sn-Au solder, to keep up with the development of chips, one of which is TLP bonding. TLP bonding has the advantages in price and junction temperature over other technologies. In this paper, TLP bonding using various materials and methods is introduced. In addition, new TLP technologies that are combined with other technologies such as metal powder mixing and ultrasonic technology are also reviewed.

• Journal of Technologic Dentistry
• /
• v.29 no.2
• /
• pp.213-223
• /
• 2007

The success of a porcelain fused to metal (PFM) restoration depends upon the quality of the porcelain-metal bond. The adhesion between metal substructure and dental porcelain is related to the diffusion of oxygen to the reaction layer formed on cast-metal surface during firing. The purposed of this investigation was to study the effects of gold based bonding agent on Ni-Cr alloy-ceramic adhesion between porcelain matrix, gold based bonding agent and metal substructure interface. gold based bonding agent have been applied as an intermediate layer between a metal substructure and a ceramic coating. gold based bonding agent(Aurofilm NP, Metalor, Swiss) was applied on Ni-Cr alloy surface by four method. Surfaces only air abraded with 110${\beta}\neq$ Al2O3 particles were used as control. metal ceramic adhesion was evaluated by a biaxial flexure test(N=5) and volume fraction of adherent porcelain was determined by SEM/EDS analysis. Result of this study suggest that the layering sequence of gold based bonding agent is very important and can improve porcelain adherence to PFM.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
• /
• v.27 no.2
• /
• pp.87-93
• /
• 2015

Recently, the heat exchangers are requiring higher performance and reliability since they are being used under the operating condition of high temperature and pressure. To satisfy these requirements, we need special materials and bonding technology. This study presents a manufacturing technology for high temperature and high pressure micro channel heat exchanger using Inconel 617. The bonding performance for diffusion bonded heat exchanger was examined and analyzed. The analysis were conducted by measuring thermal and mechanical properties such as thermal diffusivity and tensile strength, and parametric studies about bonding temperature and pressing force were also carried out. The results provided insight for bonding evaluation and the bonding condition of $1200^{\circ}C$, and 50 tons was found to be suitable for this heat exchanger. From the results, we were able to establish the base technology for the manufacturing of Inconel 617 heat exchanger through the application of the diffusion bonding.

• Journal of the Microelectronics and Packaging Society
• /
• v.22 no.3
• /
• pp.31-38
• /
• 2015

In order to achieve a high speed and high quality silicon wafer bonding, the room-temperature direct bonding using atmospheric pressure plasma and sprayed water vapor was developed. Effects of different plasma fabrication parameters, such as flow rate of $N_2$ gas, flow rate of CDA (clear dry air), gap between the plasma head and wafer surface, and plasma applied voltage, on plasma activation were investigated using the measurements of the contact angle. Influences of the annealing temperature and the annealing time on bonding strength were also investigated. The bonding strength of the bonded wafers was measured using a crack opening method. The optimized condition for the highest bonding strength was an annealing temperature of $400^{\circ}C$ and an annealing time of 2 hours. For the plasma activation conditions, the highest bonding strength was achieved at the plasma scan speed of 30 mm/sec and the number of plasma treatment of 4 times. After optimization of the plasma activation conditions and annealing conditions, the direct bonding of the silicon wafers was performed. The infrared transmission image and the cross sectional image of bonded interface indicated that there is no void and defects on the bonded wafers. The bonded wafer exhibited a bonding strength of average $2.3J/m^2$.

• Journal of Welding and Joining
• /
• v.26 no.3
• /
• pp.30-36
• /
• 2008

A flip-chip bonding system using IR laser with a wavelength of 1064 nm was developed and associated process parameters were analyzed using Taguchi methods. An infrared laser beam is designed to transmit through a silicon chip and used for transferring laser energy directly to micro-bumps. This process has several advantages: minimized heat affect zone, fast bonding and good reliability in the microchip bonding interface. Approximately 50 % of the irradiated energy can be directly used for bonding the solder bumps with a few seconds of bonding time. A flip-chip with 120 solder bumps was used for this experiment and the composition of the solder bump was Sn3.0Ag0.5Cu. The main processing parameters for IR laser flip-chip bonding were laser power, scanning speed, a spot size and UBM thickness. Taguchi methods were applied for optimizing these four main processing parameters. The optimized bump shape and its shear force were modeled and the experimental results were compared with them. The analysis results indicate that the bump shape and its shear force are dominantly influenced by laser power and scanning speed over a laser spot size. In addition, various effects of processing parameters for IR laser flip-chip bonding are presented and discussed.

• Journal of Sensor Science and Technology
• /
• v.8 no.1
• /
• pp.89-94
• /
• 1999

In this study, a new technology to bond the PZT with connection board, which is a core technology for the fabrication of medical micro high frequency sensors, was developed. Two technologies were adopted. One is bonding of In using thermal heating, he other is bonding of Pb using a high frequency heating machine. In case of thermal eating, bonding was failed because of the contaminations of In surface. But, when using high frequency healing machine, we developed good bonding characteristics at various experimental conditions and thickness of the electrode material.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2001.05a
• /
• pp.250-253
• /
• 2001

Mechanical properties of gold bonding wire for VLSI packaging have been studied. The diameters of gold wires are about 20-30 micrometer and fracture loads are 8-20 gram force. The elastic modulus, yield strength, fracture strength and elongation properties have been evaluated by micro-tensile test method. This work discusses for an appropriate selection of micro-force testing system and grip design in mim testing. The best method to determine gauge length of wire and to measure tensile properties has been proposed. The mechanical properties such as strength and elastic modulus of current gold bonding wire are higher than pure those of gold wire.

• Journal of Technologic Dentistry
• /
• v.24 no.1
• /
• pp.65-71
• /
• 2002

This study was performed to observe the microhardness change of the surface and the bonding strength between the porcelain and alloy specimens in order to investigate the effects of appended indium, tin and copper on interfacial properties of Au-Pd-Ag alloys. The hardness of castings was measured with a micro-Vicker's hardness tester. The interfacial shear bonding strength between alloy specimen and fused porcelain was measured with a mechanical testing system(MTS 858.20). The microhardness of Au-Pd-Ag alloy was increased by adding indium and tin, but not increased by adding copper. The shear bonding strength of Au-Pd-Ag-Sn alloy and Au-Pd-Ag-Cu alloy showed 87MPa, 57MPa. The higher concentration of adding elements showed the higher shear bonding strength.

• Journal of the Microelectronics and Packaging Society
• /
• v.19 no.3
• /
• pp.15-20
• /
• 2012

In electronics industry, the coming electronic devices will be expected to be high integration and convergence electronics. And also, it will be expected that the coming electronics will be flexible, bendable and wearable electronics. Therefore, the demands and interests of bonding technology between flexible substrate and chip for mobile electronics, e-paper etc. have been increased because of weight and flexibility of flexible substrate. Considering fine pitch for high density and thermal damage of flexible substrate during bonding process, the micro solder bump technology for high density and low temperature bonding process for reducing thermal damage will be required. In this study, we researched on bonding technology of chip and flexible substrate by using 25um Cu pillar bumps and Sn-Bi solder bumps were formed by electroplating. From the our study, we suggest technology on Cu pillar bump formation, Sn-Bi solder bump formation, and bonding process of chip and flexible substrate for the coming electronics.