• 한국전기전자재료학회논문지
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• 제14권10호
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• pp.779-784
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• 2001

In this work, we studied the characteristics of nitride films for the optimization of PMD(pro-metal dielectric) linear process, which can be applied to the recent semiconductor manufacturing process. We split the deposit condition of nitride films into four parts such as PO(protect overcoat) nitride, baseline, low hydrogen and high stress and low hydrogen, respectively. We tried to find out correlation between BPSG deposition and densification. In order to analyze the changes of Si-H and Si-NH-Si bonding density, we used FTIR area method. We also investigated the crack generation on wafer edge after BPSG densification, and the changes of nitride film stress as a function of RF power variation to judge whether the deposited films.

• 한국분말재료학회지
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• 제14권1호
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• pp.44-49
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• 2007

In the fabrication of dye-sensitized solar cells (DSSCs), carbon counter electrode has been tested for replacing the platinum counter electrode which has two drawbacks: limited surface area and high material cost. Poor mechanical stability of carbon layer due to weak bonding strength to electrically conductive TCO (transparent conducting oxide) glass substrate is a crucial barrier for practical application of carbon counter electrode. In the present study a carbon counter electrode with high conversion efficiency, comparable to Pt counter electrode, could be fabricated by adaption of a bonding layer between particulate carbon material and TCO substrate.

• 한국안전학회지
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• 제18권2호
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• pp.79-85
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• 2003

In this study, the behavior characteristics of specimen strengthened with CFRP plate were analyzed according to the change of temperature. CFRP plate itself has a good resistance at the high temperature, but epoxy used as a adhesive is lost its bonding strength at the relatively low temperature. Therefore, this study carries out experiment on the beams slot-bonded with CFRP plates in order to maintain the successful bonding strength of epoxy at high temperature. It is presented that the range of glass transition temperature is 60-8$0^{\circ}C$ and RC beams slot-bonded with CFRP plate shows more increasing resistance and failure load than that of interface bonded at the high temperature.

• Restorative Dentistry and Endodontics
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• 제25권3호
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• pp.313-320
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• 2000

The purpose of this study was to evaluate on the interfacial morphology between dentin and restorative materials. In this in vitro study, the cavity wall restorated with 3 different kinds of tooth colored restorative materials [resin-modified Glass Ionomer cement (Fuji II LC), composite resin (Z-100), compomer (Dyract)]. The thirty extracted human molar teeth without caries and/or restorations are used. The experimental teeth were randomly divided into three groups of ten teeth each. In each group, Wedge shaped cavities (width: 3mm, length: 2mm, depth: 1.5mm) were prepared at the cementoenamel junction on buccal and lingual surfaces. The adhesive of composite resin were mixed with rhodamine B. Primer of composite resin, Prime & Bond 2.1 of Dyract and liquid of Fuji II LC were mixed with fluorescein. In group 1, the cavity wall was treatment with dentin conditioner, and then restorated with Fuji II LC. In group 2, the cavity wall was treatment with Prime & Bond 2.1 and then restorated with Dyract. In group 3, the cavity wall was etching with 10% maleic acid, applied with primer and bonding agent and then restorated with Z-100. The interface between dentin and restorative materials was observed by fluoresence imaging with a confocal laser scanning microscope. The results were as follows : 1. In Glass ionomer group, adaptation of resin modified Glass-ionomer restoration against cavity wall is tight, but the crack formed inside of restoration were observed. 2. In Dyract group, the penetration of resin tag is shorter and the width of hybrid layer is narrower than composite resin group. 3. In Z-100 group, primer penetrated deeply through dentinal tubule. Also bonding agent was penetrated along the primer, but the penetration length is shorter than primer part, and in 3-D image, the resin tag is conical shape and lateral branch is observed.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2002년도 추계학술대회 논문집
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• pp.1033-1036
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• 2002

Wafer bonding methods such as fusion and anodic bonding suffer from high temperature treatment, long processing time, and possible damage to the micro-scale sensor or actuators. In the localized bonding process, beating was conducted locally while the whole wafer is maintained at a relatively low temperature. But previous research of localized heating has some problems, such as non-uniform soldering due to non-uniform heating and micro crack formation on the glass capsule by thermal stress effect. To address this non-uniformity problem, a new heater configuration is being proposed. By keeping several points on the heater strip at calculated and constant potential, more uniform heating, hence more reliable wafer bonding could be achieved. The proposed scheme has been successfully demonstrated, and the result shows that it will be very useful in hermetic packaging. Less than 0.2 ㎫ contact Pressure were used for bonding with 150 ㎃ current input for 50${\mu}{\textrm}{m}$ width, 2${\mu}{\textrm}{m}$ height and 8mm $\times$ 8mm, 5mm$\times$5mm, 3mm $\times$ 3mm sized phosphorus-doped poly-silicon micro heater. The temperature can be raised at the bonding region to 80$0^{\circ}C$, and it was enough to achieve a strong and reliable bonding in 3minutes. The IR camera test results show improved uniformity in heat distribution compared with conventional micro heaters. For gross leak check, IPA (Isopropanol Alcohol) was used. Since IPA has better wetability than water, it can easily penetrate small openings, and is more suitable for gross leak check. The pass ratio of bonded dies was 70%, for conventional localized heating, and 85% for newly developed FP scheme. The bonding strength was more than 30㎫ for FP scheme packaging, which shows that FP scheme can be a good candidate for micro scale hermetic packaging.

• Restorative Dentistry and Endodontics
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• 제25권3호
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• pp.399-406
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• 2000

광중합형 글래스아이오노머 베이스에 대한 레진 인레이의 접착성을 증가시킬 수 있는 방법을 모색하고자, 이차 중합된 레진 인레이의 내표면을 여러 가지 방법으로 처리한 후 레진 인레이를 광중합형 글래스아이오노머 베이스에 레진 시멘트 접착시 내표면 처리방법이 이들의 접착에 미치는 영향을 평가하고자 하였다. 글래스아이오노머 베이스 제작을 위해서 플라스틱 봉에 직경 7mm, 깊이 2mm의 1급 와동을 형성하고 Fuji II LC를 충전하였으며, 수복용 레진(Charisma$^{(R)}$)을 사용하여 레진 인레이를 제작하였다. 레진 인레이 내면은 $50{\mu}m$ aluminum oxide particles를 이용한 sandblasting 및 silane 처리군, silane 처리군, sandblasting 군, 그리고 무처리 대조군 등 4군으로 나누어 표면처리하였으며 각 군은 22개씩의 시편을 사용하였다. 인레이와 베이스의 표면에 상아질 접착제(One-Step$^{TM}$)를 도포한 후 Choice$^{TM}$를 사용하여 레진시멘트 접착하였다. 접착 양상 평가를 위해 만능시험기로 전단접착강도를 측정하고 파단면을 입체현미경으로 관찰하여 다음과 같은 결과를 얻었다. 1. Sandblasting 및 silane 처리군이 가장 높은 접착강도(10.56${\pm}$1.95MPa)를 나타내었으며, 이는 sandblasting군 및 무처리 대조군에 비해 유의하게 높았다(p<0.05). 2. Silane 처리군(9.77${\pm}$2.04MPa)은 sandblasting 및 silane 처리군과는 접착력에 있어서 통계적으로 유의한 차이를 나타내지 않았으나, sandblasting 군 및 무처리 대조군에 벼해서는 유의하게 높은 접착강도를 나타내었다(p<0.05). 3. Sandblasting만 시행 한 군은 무처리 대조군과 비교시 접착강도에 있어 유의한 차이를 나타내지 않았다(p>0.05). 4. 파단면 관찰 결과, 모든 군에서 일부 접착계면에서의 파절을 포함하는 글래스아이오노머 베이스의 응집 파괴(cohesive failure) 양상이 가장 많이 나타났으며, sandblasting 및 silane 처리군과 silane 처리군에서는 sandblasting 군 및 무처리 대조군에 비해 상대적으로 적은 접 착계면에서의 파절(adhesive failure) 양상을 나타내었다. 5. 전단접착강도와 파절양상의 관계에서, 접착강도가 클수록 응집 파괴(cohesive failure) 양상이 많이 나타나는 경향을 보였다.

• 마이크로전자및패키징학회지
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• 제14권3호
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• pp.57-64
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• 2007

Si 칩에 박막히터를 형성하고 이에 전류를 인가하여 LCD (liquid crystal display) 패널의 유리기판은 가열하지 않으면서 Si 칩만을 선택적으로 가열함으로써 Si 칩을 LCD 패널의 유리기판에 실장 하는 새로운 COG 공정기술을 연구하였다. $5\;mm{\times}5\;mm$ 크기의 Si 칩에 마그네트론 스퍼터링법으로 폭 $150\;{\mu}m$,두께 $0.8\;{\mu}m$, 전체 길이 12.15 mm의 정방형 Cu 박막히터를 형성하였으며, 이에 0.9A의 전류를 60초 동안 인가하여 Si칩의 Sn-3.5Ag 솔더범프를 리플로우 시킴으로써 Si 칩을 유리기판에 COG 본딩하는 것이 가능하였다.

• 대한전자공학회논문지SD
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• 제45권2호
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• pp.13-20
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• 2008

본 논문에서는 CMOS 이미지 센서의 웨이퍼 레벨 어셈블리를 위한 스페이스 제작 방법을 설명하였다. 스페이스 제작을 위해서 SU-8, PDMS, Si-interposer를 이용하는 세 가지 방법을 제안하였다. SU-8 스페이스에서는 균일한 두께 특성을 위해서 웨이퍼 회전 장치를 고안했으며, PDMS 스페이스에서는 glass/PDMS/glass 구조의 정렬 접합을 위해서 새로운 접합 방법을 제안하였다. Si-interposer를 이용한 스페이스 제작에서는 DRF을 이용한 접합 조건을 확립하였다. 세 가지의 실험 결과 Si-interposer를 이용한 스페이스 제작 시 glass/스페이스/glass 구조의 접합력이 가장 뛰어났으며, 접합력의 크기는 32.3MPa의 전단응력을 나타내었다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 춘계학술대회 논문집
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• pp.1049-1050
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• 2009

• 대한금속재료학회지
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• 제46권9호
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• pp.585-592
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• 2008

Flip-chip bonding using Cu-Sn mushroom bumps composed of Cu pillar and Sn cap was accomplished, and the contact resistance and the thermal cycling reliability of the Cu-Sn mushroom bump joints were compared with those of the Sn planar bump joints. With flip-chip process at a same bonding stress, both the Cu-Sn mushroom bump joints and the Sn planar bump joints exhibited an almost identical average contact resistance. With increasing a bonding stress from 32 MPa to 44MPa, the average contact resistances of the Cu-Sn mushroom bump joints and the Sn planar bump joints became reduced from $30m{\Omega}/bump$ to $25m{\Omega}/bump$ due to heavier plastic deformation of the bumps. The Cu-Sn mushroom bump joints exhibited a superior thermal cycling reliability to that of the Sn planar bump joints at a bonding stress of 32 MPa. While the contact resistance characteristics of the Cu-Sn mushroom bump joints were not deteriorated even after 1000 thermal cycles ranging between $-40^{\circ}C$ and $80^{\circ}C$, the contact resistance of the Sn planar bump joints substantially increased with thermal cycling.