• 제목/요약/키워드: bonding design

검색결과 598건 처리시간 0.026초

Chip Bonding Machine Base 구조해석에 관한 연구 (Study on the Structural Analysis of Chip Bonding Machine Base)

  • 김원종;황은하
    • 한국산업융합학회 논문집
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    • 제15권2호
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    • pp.55-58
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    • 2012
  • This study is concerned about the design and structural analysis of high integrated Chip Bonding Machine. Recently, many studies have been undergoing to reduce a working time in a field of Chip Bonding Machine. Chip Bonding Machine belongs to reduce a stand-by time by Chip Moving time. The developed system can save tool moving distance in small space than other machine. The analysis is carried out by SoldEdge & Ansys software.

금속과 세라믹의 접합기구와 접합강도 (Bonding Mechanism and Strength of Metals to Ceramics)

  • 기세호;정재필;김원중
    • Journal of Welding and Joining
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    • 제32권1호
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    • pp.40-46
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    • 2014
  • Bonding technology and bonding mechanism of metal to ceramic including brazing, diffusion bonding, friction welding and etc were reviewed in this study. Various factors should be considered from a bonding design step to acquire a good bonding joint because of a large difference between metal and ceramic in crystal lattice, coefficient of thermal expansion and various properties. In addition, metal and ceramic bonding technologies are constantly being developed according to precise components, multi-function and application to harsh environment. However, improvement of bonding properties and bonding reliability also should be accompanied. Bonding of ceramics, such as $ZrO_2$, $Ti_3AlC_2$ and SiC, to metals like Ti-alloy, TiAl and steel were described in this paper.

구리 질화막을 이용한 구리 접합 구조의 접합강도 연구 (Bonding Strength Evaluation of Copper Bonding Using Copper Nitride Layer)

  • 서한결;박해성;김가희;박영배;김사라은경
    • 마이크로전자및패키징학회지
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    • 제27권3호
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    • pp.55-60
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    • 2020
  • 최근 참단 반도체 패키징 기술은 고성능 SIP(system in packaging) 구조로 발전해 가고 있고, 이를 실현시키기 위해서 구리 대 구리 접합은 가장 핵심적인 기술로 대두되고 있다. 구리 대 구리 접합 기술은 아직 구리의 산화 특성과 고온 및 고압력 공정 조건, 등 해결해야 할 문제점들이 남아 있다. 본 연구에서는 아르곤과 질소를 이용한 2단계 플라즈마 공정을 이용한 저온 구리 접합 공정의 접합 계면 품질을 정량적 접합 강도 측정을 통하여 확인하였다. 2단계 플라즈마 공정은 구리 표면에 구리 질화막을 형성하여 저온 구리 접합을 가능하게 한다. 구리 접합 후 접합 강도 측정은 4점 굽힘 시험법과 전단 시험법으로 수행하였으며, 평균 접합 전단 강도는 30.40 MPa로 우수한 접합 강도를 보였다.

Cu-SiO2 하이브리드 본딩 (Cu-SiO2 Hybrid Bonding)

  • 서한결;박해성;김사라은경
    • 마이크로전자및패키징학회지
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    • 제27권1호
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    • pp.17-24
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    • 2020
  • As an interconnect scaling faces a technical bottleneck, the device stacking technologies have been developed for miniaturization, low cost and high performance. To manufacture a stacked device structure, a vertical interconnect becomes a key process to enable signal and power integrities. Most bonding materials used in stacked structures are currently solder or Cu pillar with Sn cap, but copper is emerging as the most important bonding material due to fine-pitch patternability and high electrical performance. Copper bonding has advantages such as CMOS compatible process, high electrical and thermal conductivities, and excellent mechanical integrity, but it has major disadvantages of high bonding temperature, quick oxidation, and planarization requirement. There are many copper bonding processes such as dielectric bonding, copper direct bonding, copper-oxide hybrid bonding, copper-polymer hybrid bonding, etc.. As copper bonding evolves, copper-oxide hybrid bonding is considered as the most promising bonding process for vertically stacked device structure. This paper reviews current research trends of copper bonding focusing on the key process of Cu-SiO2 hybrid bonding.

Fabrication and Challenges of Cu-to-Cu Wafer Bonding

  • Kang, Sung-Geun;Lee, Ji-Eun;Kim, Eun-Sol;Lim, Na-Eun;Kim, Soo-Hyung;Kim, Sung-Dong;Kim, Sarah Eun-Kyung
    • 마이크로전자및패키징학회지
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    • 제19권2호
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    • pp.29-33
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    • 2012
  • The demand for 3D wafer level integration has been increasing significantly. Although many technical challenges of wafer stacking are still remaining, wafer stacking is a key technology for 3D integration due to a high volume manufacturing, smaller package size, low cost, and no need for known good die. Among several new process techniques Cu-to-Cu wafer bonding is the key process to be optimized for the high density and high performance IC manufacturing. In this study two main challenges for Cu-to-Cu wafer bonding were evaluated: misalignment and bond quality of bonded wafers. It is demonstrated that the misalignment in a bonded wafer was mainly due to a physical movement of spacer removal step and the bond quality was significantly dependent on Cu bump dishing and oxide erosion by Cu CMP.

강재결합구를 이용한 강관말뚝 합성형 두부결합 방법 (Composite Bonding Methods of Steel Pipe Piles into Pile Caps Using Steel Couplers)

  • 오성남;심창수;유재남;홍성영
    • 한국지반공학회:학술대회논문집
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    • 한국지반공학회 2001년도 봄 학술발표회 논문집
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    • pp.323-330
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    • 2001
  • The existing bonding methods of steel pipe piles into pile caps have many problems during construction or design. To overcome these, the composite bonding method of the bolting type and the welding type are proposed in this stud\ulcorner. The full scale test and the numerical analysis using finite element method were performed to verify the function of them. As results, the method of the filled with concrete in steel pipe piles head was good effective to increse strength. And the composite bonding methods are effective to protect the damage caused by earthquake than the bolted bonding method. Also, the composite bonding methods are cheaper than the existing bonding methods and a good construction as well.

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LCD 구동 IC의 실장을 위한 초음파 ACF접합 기술 (Ultrasonic ACF Bonding Technique for Mounting LCD Driver ICs)

  • 정상원;윤원수;김경수
    • 제어로봇시스템학회논문지
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    • 제14권6호
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    • pp.543-547
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    • 2008
  • In the paper, we develop the ultrasonic bonding technique for LCD driver chips having small size and high pin-density. In general, the mounting technology for LCD driver ICs is a thermo-compression method utilizing the ACF (An-isotropic Conductive Film). The major drawback of the conventional approach is the long process time. It will be shown that the conventional ACF method based on thermo-compression can be remarkably enhanced by employing the ultrasonic bonding technique in terms of bonding time. The proposed approach is to apply the ultrasonic energy together with the thermo-compression methodology for the ACF bonding process. To this end, we design a bonding head that enables pre-heating, pressure and ultrasonic excitation. Through the bonding experiments mainly with LCD driver ICs, we present the procedures to select the best combination of process parameters with analysis. We investigate the effects of bonding pressure, bonding time, pre-heating temperature before bonding, and the power level of ultrasonic energy. The addition of ultrasonic excitation to the thermo-compression method reduces the pre-heating temperature and the bonding process time while keeping the quality bonding between the LCD pad and the driver IC. The proposed concept will be verified and demonstrated with experimental results.

반응 표면 분석법을 이용한 Light Emitting Diode(LED) wire bonding 용 Ball Bonding 공정 최적화에 관한 연구 (Process Capability Optimization of Ball Bonding Using Response Surface Analysis in Light Emitting Diode(LED) Wire Bonding)

  • 김병찬;하석재;양지경;이인철;강동성;한봉석;한유진
    • 한국산학기술학회논문지
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    • 제18권4호
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    • pp.175-182
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    • 2017
  • 본 와이어 본딩은 발광 다이오드의 패키징 공정에서 매우 중요한 공정으로 금 와이어를 이용하여 발광 다이오드 칩과 리드 프레임을 연결함으로써 다음 공정에서의 전기적 작동을 가능하게 한다. 와이어 본딩 공정은 얇은 금속선을 연결하는 공정으로 열 압착 본딩(thermo compression bonding)과 초음파 본딩(ultra sonic bonding)이 있다. 일반적인 와이어 본딩 공정은 LED 칩 상부 전극 부위에 볼 모양의 본딩을 진행하는 1st ball bonding 공정, loop를 형성하여 다른 전원 연결부위로 wire를 늘어뜨리는 looping 공정, 다른 전극 부위 상부에 stitch를 형성하여 bonding 하는 2nd stitch bonding으로 구분된다. 본 논문에서는 발광 다이오드 다이 본딩 공정에 영향을 주는 다양한 공정 변수에 대하여 분석을 수행하였다. 그리고 반응 표면 분석법을 통하여 Zener 다이오드 칩과 PLCC 발광 다이오드 패키지 프레임을 연결하는 공정 최적화 결과를 도출하였다. 실험 계획법은 5인자, 3수준에 대하여 설정하였으며 4가지 반응에 대하여 인자를 분석하였다. 결과적으로 본 연구에서는 모든 목표에 맞는 최적 조건을 도출하였다.

지르코니아와 레진 시멘트의 결합 (Bonding to zirconia with resin cements)

  • 임범순;허수복
    • 대한치과의사협회지
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    • 제49권5호
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    • pp.265-278
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    • 2011
  • The introduction of zirconia-based materials to the dental field broadened the design and application limits of, all-ceramic restorations. Most ceramic restorations are adhesively luted to the prepared tooth, however, resin bonding to zirconia components is less reliable than those to other dental ceramic systems. It is important for high retention, prevention of microleakage, and increased fracture resistance, that bonding techniques be improved for zirconia systems. Strong resin bonding relies on micromechanical interlocking and adhesive chemical bonding to the ceramic surface, requiring surface roughening for mechanical bonding and surface activation for chemical adhesion. In many cases, high strength ceramic restorations do not require adhesive bonding to tooth structure and can be placed using conventional cements which rely only on micromechanical retention. However, resin bonding is desirable in some clinical situations. In addition, it is likely that strong chemical adhesion would lead to enhanced long-term fracture and fatigue resistance in the oral environment.

초음파를 이용한 금속-유리 접합에 관한 연구 (A Study on the Metal-Glass Bonding Using Ultrasonic)

  • 정안목;전의식;김철호
    • 반도체디스플레이기술학회지
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    • 제10권2호
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    • pp.103-108
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    • 2011
  • Ultrasonic welding is widely used in bonding of the same kind or dissimilar materials. The important variable of ultrasonic bonding is the bonding pressure, bonding time and applied amplitude energy. These variables have to be optimized in order to obtain the optimum bonding results. In this research, the important factor to optimal bonding between metal and glass were experimentally investigated by applying design of experiment.