• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.5A
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• pp.497-502
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• 2007

Broadband monolithic SiGe HBT variable gain amplifier with a feedforward configuration have been newly developed to improve bandwidth and dB-linearly controlled gain characteristics. The VGA has been implemented in a $0.35-{\mu}m$ BiCMOS process. The VGA achieves a dynamic gain-control range of 19.6 dB and a 3-dB bandwidth of 4 GHz ($4{\sim}8\;GHz$) with the control-voltage range from 0.6 to 2.6 V. The VGA produces a maximum gain of 9.3 dB at 6 GHz and a output power of -3 dBm at 8 GHz.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.37 no.2
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• pp.75-82
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• 2000

In this Paper, a new type of feedforward linearizer using a delay line which controls the phase characteristics of the correction amplifier block is proposed. The extra delay line provides the control-ability of IM signals so that the IM rejection is accomplished without the conventional pilot tone. The error signal loop consists of several key components such as phase shifter and attenuator, subtractor. These key components are replaced by new designs in order to obtain better linearization characteristics without the pilot tone generator which is indispensable in the conventional linearizer designs. The proposed linearizer was designed at Korean PCS band and combined with 35W HPA manufactured by KMW inc., and tested with two-tone signals separated 0.6MHz apart at the center frequency of 1855MHz. The experimental results show C/l improvement by 16.9 ~ 24.6 dB over 15 dB dynamic range(30 ~45 dBm) which gave IMD of 58.5~63.2 dBc for the designed LPA.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.12
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• pp.941-947
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• 2017

This paper reports a fractional-N phase-locked-loop(PLL) frequency synthesizer that is implemented in a $0.35-{\mu}m$ standard CMOS process and generates a quadrature signal for an FRS terminal. The synthesizer consists of a voltage-controlled oscillator(VCO), a charge pump(CP), loop filter(LF), a phase frequency detector(PFD), and a frequency divider. The VCO has been designed with an LC resonant circuit to provide better phase noise and power characteristics, and the CP is designed to be able to adjust the pumping current according to the PFD output. The frequency divider has been designed by a 16-divider pre-scaler and fractional-N divider based on the third delta-sigma modulator($3^{rd}$ DSM). The LF is a third-order RC filter. The measured results show that the proposed device has a dynamic frequency range of 460~510 MHz and -3.86 dBm radio-frequency output power. The phase noise of the output signal is -94.8 dBc/Hz, and the lock-in time is $300{\mu}s$.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.12
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• pp.37-43
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• 2009

This paper describes a monolithic Darlington-cascade amplifier (DCA) operating at X-band, realized with a 0.35-micron SiGe bipolar process, which provides 45 GHz $f_T$. A conventional cascade amplifier was also designed on the same process and tested to establish a reference. Compared to the reference cascade amplifier, the proposed monolithic amplifier circuit exhibits an improved gain of 2.5 dB and improved output power 1-dB compression point of 5.2 dB with 72% wider bandwidth. Measurement results show 19.5 dB gain, 11.2 dBm 1-dB compression power, and 3.1 GHz bandwidth. These results demonstrate that the Darlington-cascade cell is an advantageous substitute to the conventional cascade amplifier.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.9
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• pp.1065-1071
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• 2010

In this paper, we proposed a novel harmonic load circuit to design a high efficiency class-F amplifier. The proposed load circuit controls termination impedances to enhance the efficiency of class-F power amplifier. The termination impedances at the 2nd and the 3rd harmonics are showed short and open condition, respectively. Also, a fabricated load circuit showed an attenuation characteristic more than 29 dB, that is enough to eliminate harmonics of the class-F power amplifier. The measured drain and power-added efficiency are 75.7 % and 71.3 % at the point of maximum output power 35.17 dBm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.4
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• pp.351-354
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• 2017

In this paper, a compact MIMO(Multiple Input Multiple Output) antenna for smart glasses is proposed. The proposed MIMO antenna is designed using T-shaped isolator inserted between two closely located Inverted-F Antenna(IFA) and using two slots located in the ground for isolation enhancement and impedance matching characteristic. The proposed antenna has only the overall dimensions of $35mm{\times}9mm{\times}0.8mm$ and operates in the 2.4 GHz industrial, scientific, and medical(ISM) band. To verify human body effect, the phantom is used for antenna performance. The measured specific absorption rate(SAR) value is 1.38 W/kg with an input power of 18 dBm. The performance of the proposed antenna is compared with that of previous works for verification.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.6
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• pp.1269-1276
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• 2005

In this paper, Mixer using the direct-conversion method intended to use in front-end of a RF receiver is designed. The direct conversion Mixer is an alternative wireless receiver architecture to the well-established superheterodyne, particularly for high integration, low power, and low cost. It operates at 2.4GHz band, and is designed and simulated with a 0.35um CMOS technology and HSPICE simulator. Layout is implemented with a Mentor IC Station. The 2.4GHz CMOS Mixer employs a modified single-balanced Gilbert Cell with additional MOSFET in the output stages to improve IIP2, which is a standard of linearity in direct conversion receiver. Additional coversion-stages's transconductances are controlled by each MOSFET's physical properties. The HSPICE simulation results show that the 2.4GHz CMOS Mixer has voltage gam of 29dB, IIP2 of 63dBm, respectively. The Mixer also draws 3.5mA from a 3.3V supply.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.10
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• pp.1347-1353
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• 2011

Friction stir welding (FSW) method has extensively been used in manufacturing methods because of the several advantages over conventional welding methods, such as better mechanical properties, reduced occurrence of joining defects, high material saving, and low production time, etc. The aim of this paper is to review the optimal FSW conditions using the previous experimental results and is to investigate the fatigue crack growth rate in three different zones, WM, HAZ and BM for FSWed Al7075-T651 aluminum plates. As far as our experiments are concerned, the optimal conditions are obtained as rotation speed, 800rpm and travelling speed, 0.5mm/sec. The fatigue crack growth rate showed strong dependency on three different zones WM, HAZ and BM, and crack driving force.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.4C
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• pp.371-379
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• 2002

In this paper, the MMIC SPST switches operating from DC to 3GHz were designed and implemented. Prior to the design of switches, the small and large-signal switch models were needed to predict switch performance accurately. The newly proposed small-signal switch model parameters were extracted from measured S-parameters using optimization technique with estimated initial values and boundary limits. In the extraction of large-signal switch model parameters, the current source was modeled by fitting empirical equations to measured DC data and the charge model was derived from extracted channel capacitances from measured S-parameters varying the drain-source voltage. To design basic series-shunt SPST switches and isolation-improved SPST switches, we applied this model to commercial microwave circuit simulator. The improved SPST switches exhibited 0.302dB insertion loss, 35.762dB isolation, 1.249 input VSWR, 1.254 output VSWR, and about 15.7dBm PldB with 0/-3V control voltages at 3GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.1
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• pp.20-26
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• 2016

This paper presents an X-band two-stage power amplifier using GaN-HEMT. Two-stage structure was adopted to take its high gain and simple inter-stage matching network. Based on a 3D EM simulation, the bond-wire inductance and the parasitic capacitance were predicted. By reducing bond-wire inductance, Q of the matching network is decreased and the bandwidth is improved. The implemented two-stage PA shows a power gain of more than 16 dB, saturated output power of more than 42.5 dBm, and a efficiency of more than 35 % in frequency range of 8.1~8.5 GHz with an operating voltage of 40 V.