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http://dx.doi.org/10.5515/KJKIEES.2016.27.1.20

Design of Two-Stage X-Band Power Amplifier Using GaN-HEMT  

Lee, Wooseok (School of Information and Communication Engineering, Sungkyunkwan University)
Lee, Hwiseob (School of Information and Communication Engineering, Sungkyunkwan University)
Park, Seungkuk (School of Information and Communication Engineering, Sungkyunkwan University)
Lim, Wonseob (School of Information and Communication Engineering, Sungkyunkwan University)
Han, Jaekyoung (Peopleworks Co., Ltd.)
Park, Kwanggun (Peopleworks Co., Ltd.)
Yang, Youngoo (School of Information and Communication Engineering, Sungkyunkwan University)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.27, no.1, 2016 , pp. 20-26 More about this Journal
Abstract
This paper presents an X-band two-stage power amplifier using GaN-HEMT. Two-stage structure was adopted to take its high gain and simple inter-stage matching network. Based on a 3D EM simulation, the bond-wire inductance and the parasitic capacitance were predicted. By reducing bond-wire inductance, Q of the matching network is decreased and the bandwidth is improved. The implemented two-stage PA shows a power gain of more than 16 dB, saturated output power of more than 42.5 dBm, and a efficiency of more than 35 % in frequency range of 8.1~8.5 GHz with an operating voltage of 40 V.
Keywords
GaN-HEMT; X-Band; Power Amplifier; Two-Stage Power Amplifier;
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