• Journal of radiological science and technology
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• v.46 no.3
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• pp.187-195
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• 2023

A shield was made by mixing materials such as bismuth(Bi) and barium(Ba) with silicon to evaluate its shielding ability. Bismuth was made into a shield by mixing a bismuth oxide(Bi₂O₃) colloidal solution and a silicon base and applied to a fibrous fabric, and barium was made by mixing lead oxide(PbO) and barium sulfate(BaSO₄) with a silicon curing agent and solidifying it to make a shield. The test was conducted according to the lead equivalent test method for X-ray protective products of the Korean Industrial Standard. The experiment was conducted by increasing the shielding body one by one from the test condition of 60 kVp, 200 mA, 0.1sec and 100 kVp, 200 mA, 0.1 sec. At 60 kVp, 2 lead oxide-barium sulfate shields, 2 bismuth oxide 1.5 mm shields, and 5 bismuth oxide 0.3 mm shields showed shielding ability equal to or higher than that of lead 0.5 mm. At 100 kVp, 2 lead oxide-barium sulfate shields and 2 bismuth oxide 1.5 mm shields showed shielding ability equal to or higher than that of lead 0.5 mm. It was confirmed that when using 2 pieces of lead oxide-barium sulfate and 1.5 mm of bismuth oxide, respectively, it has shielding ability equivalent to that of lead. Bismuth oxide and lead oxide-barium sulfate are lightweight and have excellent shielding ability, thus they have excellent properties to be used as an apron for radiation protection or other shielding materials.

• Journal of the Optical Society of Korea
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• v.14 no.4
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• pp.298-304
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• 2010

The pair-induced quenching (PIQ) effect in a highly doped bismuth oxide-based erbium-doped fiber amplifier (EDFA) was theoretically and experimentally investigated. In the theoretical investigation, the bismuth oxide-based EDFA was modeled as a 6-level amplifier system that incorporated clustering-induced concentration quenching, cooperative up-conversion, pump excited state absorption (ESA), and signal ESA. The relative number of paired ions in a highly doped bismuth oxide EDF was estimated to be ~6.02%, determined by a comparison between the theoretical and the experimentally measured gain values. The impacts of the PIQ on the gain and the noise figure were also investigated.

• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.260-264
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• 2014

We developed a novel double dopant bismuth oxide system with Tb and W. When Tb was doped as a single dopant, a Tb dopant concentration more than 20 mol% was required to stabilize bismuth oxides with a high conductivity cubic structure. High temperature XRD analysis of 25 mol% Tb-doped bismuth oxide (25TSB) confirmed that the cubic structure of 25TSB was retained from room temperature to $700^{\circ}C$ with increase in the lattice parameter. On the other hand, we achieved the stabilization of high temperature cubic phase with a total dopant concentration as low as ~12 mol% with 8 mol% Tb and 4 mol% W double dopants (8T4WSB). Moreover, the measured ionic conductivity of 10T5WSB was much higher than 25TSB, thus demonstrating the feasibility of the double dopant strategy to develop stabilized bismuth oxide systems with higher oxygen ion conductivity for the application of SOFC electrolytes at reduced temperature. In addition, we investigated the long-term stability of TSB and TWSB electrolytes.

• Journal of Information Display
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• v.6 no.4
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• pp.40-44
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• 2005

Nanometer-sized bismuth oxide with a diameter of about 80 nm was used as a new electron reflection material in a 29" Real Flat CPT. This bismuth oxide was well dispersed over pH8 in slurry. Spray coating was performed clearly and uniformly and was ensured that there was no clogging of shadow mask hole. Coating thickness was expressed to the brightness of chromaticity for the sprayed layer and was also well controlled during the spraying process. Doming was improved by about 10% in spite of the similar coating weight in comparison with the average 3.5 ${\mu}m$ of the conventional bismuth oxide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.94-97
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• 2005

Bismuth high Tc superconducting thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra low growth rate, and sticking processing of the respective elements are evaluated. The sticking processing of bismuth element in bismuth high Tc superconducting thin film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the bismuth phase formation in the co-deposition process.

• Journal of Magnetics
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• v.20 no.2
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• pp.103-109
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• 2015

In this study, the authors attempted to produce a medical radiation shielding fiber that can be produced at a nanosize scale and that is, unlike lead, harmless to the human body. The performance of the proposed medical radiation shielding fiber was then evaluated. First, diamagnetic bismuth oxide, an element which, among elements that have a high atomic number and density, is harmless to the human body, was selected as the shielding material. Next, 10-100 nm sized nanoparticles in powder form were prepared by ball milling the bismuth oxide ($Bi_2O_3$), the average particle size of which is $1-500{\mu}m$, for approximately 10 minutes. The manufactured bismuth oxide was formed into a colloidal solution, and the radiation shielding fabric was fabricated by curing after coating the solution on one side or both sides of the fabric. The thicknesses of the shielding sheets prepared with bismuth oxide were 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, and 1.0 mm. An experimental method was used to measure the absorbed dose and irradiation dose by using the lead equivalent test method of X-ray protection goods presented by Korean Industrial Standards; the resultant shielding rate was then calculated. From the results of this study, the X-ray shielding effect of the shielding sheet with 0.1 mm thickness was about 55.37% against 50 keV X-ray, and the X-ray shielding effect in the case of 1.0 mm thickness showed shielding characteristics of about 99.36% against 50 keV X-ray. In conclusion, it is considered that nanosized-bismuth radiation shielding fiber developed in this research will contribute to reducing the effects of primary X-ray and secondary X-ray such as when using a scattering beam at a low level exposure.

• Journal of the Korean Ceramic Society
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• v.54 no.5
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• pp.413-421
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• 2017

In this work, we studied a fluorite structure oxides: Yttria stabilized zirconia, (YSZ); Gd doped $CeO_2$ (GDC); erbia stabilized $Bi_2O_3$ (ESB); Zr doped erbia stabilized $Bi_2O_3$ (ZESB); Ca doped erbia stabilized $Bi_2O_3$ (CESB) in the temperature range of 250 to $600^{\circ}C$ using electrochemical impedance spectroscopy (EIS). As is well known, grain boundary blocking effect was observed in YSZ and GDC. However, there is no grain boundary effect on ESB, ZESB, and CESB. The Nyquist plots of these materials exhibit a single arc at low temperature. This means that there is no space charge effect on ${\delta}-Bi_2O_3$. In addition, impedance data were analyzed by using the brick layer model. We indirectly demonstrate that grain boundary ionic conductivity is similar to or even higher than bulk ionic conductivity on cubic bismuth oxide.

• Korean Journal of Optics and Photonics
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• v.21 no.4
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• pp.139-145
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• 2010

A complete modeling of erbium-doped Bismuth-oxide fibers with a high doping concentration is presented. A 6-level amplifier system that incorporated clustering-induced concentration quenching, cooperative upconversion, pump excited state absorption (ESA), and signal ESA, was adopted for the modeling. The accuracy of the modeling was verified by comparing the calculated gain and noise figure with experimentally obtained ones.

• Advances in nano research
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• v.3 no.3
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• pp.123-131
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• 2015

The unintentionally doped and bismuth (Bi) doped zinc oxide (ZnO) films were prepared by spray pyrolysis at $450^{\circ}C$ with zinc acetate and bismuth nitrate precursor. The n-type conduction with concentration $6.13{\times}10^{16}cm^{-3}$ can be observed for the unintentionally doped ZnO. With the increasing of bismuth nitrate concentration in precursor, the p-type conduction can be observed. The p-type concentration $4.44{\times}10^{17}cm^{-3}$ can be achieved for the film with the Bi/Zn atomic ratio 5% in the precursor. The photoluminescence spectroscopy with HeCd laser light source was studied for films with different Bi doping. The photocatalytic activity for the unintentionally doped and Bi-doped ZnO films was studied through the photodegradation of Congo red under UV light illumination. The effects of different Bi contents on photocatalytic activity are studied and discussed. Results show that appropriate Bi doping in ZnO can increase photocatalytic activity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.60-60
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• 2010

1-D nanostructured materials have much more attention because of their outstanding properties and wide applicability in device fabrication. Bismuth oxide($Bi_2O_3$) is an important p-type semiconductor with main crystallographic polymorphs denoted by $\alpha-$, $\beta-$, $\gamma-$, and $\delta-Bi_2O_3$[1]. Due to its unique optical and electrical properties, $Bi_2O_3$ has been extensively investigated for various applications in gas sensors, photovoltaic cells, fuel cells, supercapacitors[2-4]. In this study, $Bi_2O_3$ NWs were grown by two step annealing process: in the first step, after annealing at $270^{\circ}C$ for 10h in a vaccum($3{\times}10^{-6}$ torr), we can obtain the bismuth nanowires. In the second step, after annealing at $300^{\circ}C$ for 2h in $O_2$ ambient, we successfully fabicated $Bi_2O_3$nanowires.