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http://dx.doi.org/10.4191/kcers.2017.54.5.06

Absence of Distinctively High Grain-Boundary Impedance in Polycrystalline Cubic Bismuth Oxide  

Jung, Hyun Joon (Graduate School of EEWS, KAIST)
Chung, Sung-Yoon (Graduate School of EEWS, KAIST)
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Abstract
In this work, we studied a fluorite structure oxides: Yttria stabilized zirconia, (YSZ); Gd doped $CeO_2$ (GDC); erbia stabilized $Bi_2O_3$ (ESB); Zr doped erbia stabilized $Bi_2O_3$ (ZESB); Ca doped erbia stabilized $Bi_2O_3$ (CESB) in the temperature range of 250 to $600^{\circ}C$ using electrochemical impedance spectroscopy (EIS). As is well known, grain boundary blocking effect was observed in YSZ and GDC. However, there is no grain boundary effect on ESB, ZESB, and CESB. The Nyquist plots of these materials exhibit a single arc at low temperature. This means that there is no space charge effect on ${\delta}-Bi_2O_3$. In addition, impedance data were analyzed by using the brick layer model. We indirectly demonstrate that grain boundary ionic conductivity is similar to or even higher than bulk ionic conductivity on cubic bismuth oxide.
Keywords
Cubic bismuth oxide; Grain boundary blocking effect; Space charge; Electrochemical impedance spectroscopy;
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