• Advances in materials Research
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• 제8권4호
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• pp.295-311
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• 2019

In this study, a three-dimensional Finite Element Model has been developed to estimate the size of the weakened zone in a bi-material a ceramic bonded to metal. The calculations results were compared to those obtained using Scanning Electron Microscope (SEM). In the case of elastic-plastic behaviour of the structure, it has been shown that the simulation results are coherent with the experimental findings. This indicates that Finite Element modeling allows an accurate prediction and estimation of the weakening effect of residual stresses on the bonding interface of Alumina. The obtained results show us that the three-dimensional numerical simulation used by the Finite Element Method, allows a good prediction of the weakened zone extent of a ceramic, which is bonded with a metal.

• 한국세라믹학회지
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• 제39권8호
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• pp.750-757
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• 2002

Photosensitive sol solution을 이용한 self pattern된 박막은 photoresist/dry etching process에 비해 박막의 제조과정이 간단하다는 장점을 가지고 있다. 이 연구에서는 photosensitive sol solution을 이용하여 spin coating법에 의해 $Sr_{0.9}Bi_{2.1}Ta_2O_9$의 조성을 갖는 강유전체 박막을 제조하였으며 출발원료는 $Sr(OC_2H_5)_2,\;Bi(TMHD)_3$와 $Ta(OC_2H_5)_5$를 사용하였다. SBT 박막에 UV 노광시간을 증가시킴에 따라 M-O-M 결합이 생성되면서 metal ${\beta}$-diketonate의 UV 흡수 피크 강도는 감소되었고 SBT 박막에 UV 조사에 따른 용해도 차이가 생기면서 fine patterning을 얻을 수 있었다. 또한 UV가 조사된 SBT 박막의 강유전 특성이 UV가 조사되지 않은 것보다 우수하였다.

• 한국세라믹학회지
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• 제50권3호
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• pp.238-243
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• 2013

We investigated the effect of Pb-metal filler added to a hybrid paste(PbO-$Bi_2O_3-B_2O_3$-ZnO glass frit and Pb-powder), for joining flip-chip sat lower temperatures than normal. The glass transition temperature was detected at $250^{\circ}C$ and the softening point occurred at $330^{\circ}C$. As the temperature increased, the specific density decreased due to the volatility of the Pb-metal and boron component in the glass. When the glass was heat-treated at $350^{\circ}C$ for 5 min, XRD results revealed a crystalline $Pb_4Bi_3B_7O_{19}$ phase that had been initiated by the addition of Pb-filler in the hybrid paste. The addition of the Pb-metal filler caused are action between the Pb-metal and glass that accelerated the formation of the liquid phase. The liquid phase that formed, promoted bonding between the flip-chip substrate sat lower temperature.

• The Korean Journal of Ceramics
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• 제4권1호
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• pp.33-36
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• 1998

Epitaxially grown $Bi_4Ti_3O_{12}$ thin films on the MgO(100) substrates was prepared by dipping-pyrolysis process using metal naphthenates as starting materials. The films annealed at various temperatures were charactrized by X-ray diffraction $\theta$-2$\theta$ scans and pole-figure analysis ($\beta$ scanning). Highly c-axia oriented Bi4Ti3O12 films were crystallized by heat-treatment at 700$^{\circ}$ and 75$0^{\circ}C$ from precursor films pyrolyzed at 50$0^{\circ}C$. The X-ray pole-figure analysis indicated that the $Bi_4Ti_3O_{12}$ thin films have an epitaxial relationship with the MgO(100) substrates.

• 한국세라믹학회지
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• 제39권4호
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• pp.377-385
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• 2002

Metal-Ferroelectric-Insulator-Semiconductor(MFIS) 구조의 적용하기 위해 R. F. 마그네트론 스퍼터를 이용하여 p-type Si(111) 기판 위에 $ZrO_2$와 $SrBi_2Ta_2O_9$ 박막을 증착하였다. SBT 박막은 $ZrO_2$ 완충층을 삽입함으로써 MFIS 구조의 전기적인 특성이 향상되었다. $ZrO_2$ 박막의 두께를 고정하고 SBT 박막의 두께를 160nm에서 220nm으로 변화시키면서 윈도우 메모리를 3-9V의 범위에서 측정하였다. Pt/SBT(160nm)/$ZrO_2$(20nm)/Si의 조건에서 최대 2.2V 메모리 윈도우 값을 얻을 수 있었으며 이 메모리 윈도우 값은 실제 적용되는 저전압 NDRO-FRAM 구동에 충분한 값이다.

• 한국세라믹학회지
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• 제35권9호
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• pp.1002-1005
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• 1998

Bismuth titanate thin films were prepared on {{{{ { SrTiO}_{3 } }}(100) and Si(100) substrates by dipping-pyrolysis pro-cess using metal naphthenates as starting materials. crystallinity and in-phase alignment of the films were analyzed by X-ray diffraction $\theta$-2$\theta$ scans and $\beta$ scans (pole-figures) respectively. Highly c-axis-oriented {{{{ { { {Bi }_{4 }Ti }_{3 }O }_{12 } }} thin films with smooth surfaces were obtained after heat treatment at 75$0^{\circ}C$ on {{{{ { SrTiO}_{3 } }}(100) sub-strate while the films grown of Si(100) exhibited polycrstalline characteristics. C-axis oriented film show-ed an epitaxial relationship with the {{{{ { SrTiO}_{3 } }} substrate.

• Structural Engineering and Mechanics
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• 제50권4호
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• pp.441-457
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• 2014

This paper presents a finite element based numerical model to solve two dimensional bi-material problems. A bi-material beam consisting of two phase materials ceramic and metal is modelled by finite element method. The beam is subjected simultaneously to mechanical and thermal loadings. The main objective of this study is the analysis of crack deviation located in the brittle material near the interface. The effect of temperature gradient, the residual stresses and applied loads on crack initiation, propagation and deviation are examined and highlighted.

• Progress in Superconductivity
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• 제7권2호
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• pp.179-183
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• 2006

As a material for SFCL(Superconducting Fault Current Limiter), BSCCO tube with metal stabilizer is a promising candidate, assuring the stability and large power capacity, For the application, the proper soldering technique, which overcome the difficulties of the joining between BSCCO and metal stabilizer, is required. In this study, after soldering In-Bi solder and In-Sn solder with BSCCO superconductor, welding properties between BSCCO and solders were investigated. Because ceramic materials is difficult to weld, Ag electro-plating on BSCCO 2212 is used for intermetallic layer. To find out the best welding condition for superconductor, soldering is tested in the maximum temperature from $155^{\circ}C\;to\;165^{\circ}C$ in the reflow oven. By investigating the composition and thickness of IMC (lntermetallic Compound) created in the reaction of Ag with solder, we analyzed the welding properties of High-Tc superconductor from a micro point of view.

• Transactions on Electrical and Electronic Materials
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• 제11권5호
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• pp.212-215
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• 2010

$BiFeO_3/Pb(Zr_{0.95}Ti_{0.05})O_3$ (BFO/PZT) heterolayered thin films were fabricated by the spin coating method on a Pt/Ti/$SiO_2$/Si substrate using metal alkoxide solutions. The coating and heating procedure was repeated 6 times to form the heterolayered films. The thickness of the BFO/PZT films after one cycle of drying/sintering is about 30-40 nm. All BFO/PZT films show a void free uniform grain structure without the presence of rosette structures. It can be assumed that the crystal growth of the upper BFO layers can be influenced by the lower PZT layers. As the number of coatings increased, the dielectric constant increased, so that the value for the 6-layer film was 1360 at 1 KHz.

• 한국세라믹학회지
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• 제44권8호
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• pp.403-406
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• 2007

Ferroelectric Ce-doped $Bi_4Ti_3O_{12}$ (BCT) thin films were deposited by liquid delivery metal organic chemical vapor deposition (MOCVD) onto a $Pt(111)/Ti/SiO_2/Si(100)$ substrate. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to identify the crystal structure, the surface, and the cross-section morphology of the deposited ferroelectric flims. After annealing above $640^{\circ}C$, the BCT films exhibited a polycrystalline structure with preferred (001) and (117) orientations. The BCT lam capacitor with a top Pt electrode showed a large remnant polarization ($2P_r$) of $44.56{\mu}C/cm^2$ at an applied voltage of 5 V and exhibited fatigue-free behavior up to $1.0{\times}10^{11}$ switching cycles at a frequency of 1 MHz. This study clearly reveals that BCT thin film has potential for application in non-volatile ferroelectric random access memories and dynamic random access memories.