Preparation of Epitaxial $Bi_4Ti_3O_{12}$ Thin Films on MgO(100) Substrates

  • Hwang, Kyu-Seog (Department of Ceramic Engineering, Chonnam National University) ;
  • Kim, Byung-Hoon (Department of Ceramic Engineering, Chonnam National University)
  • Published : 1998.03.01

Abstract

Epitaxially grown $Bi_4Ti_3O_{12}$ thin films on the MgO(100) substrates was prepared by dipping-pyrolysis process using metal naphthenates as starting materials. The films annealed at various temperatures were charactrized by X-ray diffraction $\theta$-2$\theta$ scans and pole-figure analysis ($\beta$ scanning). Highly c-axia oriented Bi4Ti3O12 films were crystallized by heat-treatment at 700$^{\circ}$ and 75$0^{\circ}C$ from precursor films pyrolyzed at 50$0^{\circ}C$. The X-ray pole-figure analysis indicated that the $Bi_4Ti_3O_{12}$ thin films have an epitaxial relationship with the MgO(100) substrates.

Keywords

References

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