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http://dx.doi.org/10.4191/KCERS.2007.44.8.403

The Microstructure and Ferroelectric Properties of Ce-Doped Bi4Ti3O12 Thin Films Fabricated by Liquid Delivery MOCVD  

Park, Won-Tae (Department of Materials Science and Engineering, Korea University)
Kang, Dong-Kyun (Department of Materials Science and Engineering, Korea University)
Kim, Byong-Ho (Department of Materials Science and Engineering, Korea University)
Publication Information
Journal of the Korean Ceramic Society / v.44, no.8, 2007 , pp. 403-406 More about this Journal
Abstract
Ferroelectric Ce-doped $Bi_4Ti_3O_{12}$ (BCT) thin films were deposited by liquid delivery metal organic chemical vapor deposition (MOCVD) onto a $Pt(111)/Ti/SiO_2/Si(100)$ substrate. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to identify the crystal structure, the surface, and the cross-section morphology of the deposited ferroelectric flims. After annealing above $640^{\circ}C$, the BCT films exhibited a polycrystalline structure with preferred (001) and (117) orientations. The BCT lam capacitor with a top Pt electrode showed a large remnant polarization ($2P_r$) of $44.56{\mu}C/cm^2$ at an applied voltage of 5 V and exhibited fatigue-free behavior up to $1.0{\times}10^{11}$ switching cycles at a frequency of 1 MHz. This study clearly reveals that BCT thin film has potential for application in non-volatile ferroelectric random access memories and dynamic random access memories.
Keywords
Ce-doped $Bi_4Ti_3O_{12}$; Polycrystalline; Randomly oriented; Fatigue-free;
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Times Cited By KSCI : 2  (Citation Analysis)
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