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http://dx.doi.org/10.4191/KCERS.2002.39.4.377

Preparation of ZrO2 and SBT Thin Films for MFIS Structure and Electrical Properties  

Kim, Min-Cheol (Department of Inorganic Materials and Engineering, Pusan National University)
Jung, Woo-Suk (Department of Inorganic Materials and Engineering, Pusan National University)
Son, Young-Guk (Department of Inorganic Materials and Engineering, Pusan National University)
Publication Information
Journal of the Korean Ceramic Society / v.39, no.4, 2002 , pp. 377-385 More about this Journal
Abstract
The possibility of $ZrO_2$ thin film as insulator for Metal-Ferroelectric-Insulator-Semiconductor(MFIS) structure was investgated. $SrBi_2Ta_2O_9$ and $SrBi_2Ta_2O_9$(SBT) thin films were deposited on P-type Si(111) wafer by R. F. magnetron sputtering method. The electrical properties of MFIS gate were relatively improved by inserting the $ZrO_2$ buffer layer. The window memory increased from 0.5 to 2.2V in the applied gate voltage range of 3-9V when the thickness of SBT film increased from 160 to 220nm with 20nm thick $ZrO_2$. The maximum value of window memory is 2.2V in Pt/SBT(160nm)/$ZrO_2$(20nm)/Si structure with the optimum thickness of $ZrO_2$. These memory windows are sufficient for practical application of NDRO-FRAM operating at low voltage.
Keywords
Metal-Ferroelectric-Insulator-Semiconductor(MFIS) structure; ZrO$_2$; SrBi$_2Ta_2O_9(SBT)$; Buffer layer;
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