• Korean Journal of Mathematics
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• v.19 no.3
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• pp.331-342
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• 2011

We consider the multiplicity of the solutions for a class of a system of critical growth beam equations with periodic condition on t and Dirichlet boundary condition $$\{u_{tt}+u_{xxxx}=av+\frac{2{\alpha}}{{\alpha}+{\beta}}u_{+}^{{\alpha}-1}v_{+}^{\beta}+s{\phi}_{00}\;\;in\;(-\frac{\pi}{2},\;\frac{\pi}{2}){\times}R,\\u_{tt}+v_{xxxx}=bu+\frac{2{\alpha}}{{\alpha}+{\beta}}u_{+}^{\alpha}v_{+}^{{\beta}-1}+t{\phi}_{00}\;\;in\;(-\frac{\pi}{2},\;\frac{\pi}{2}){\times}R,$$ where ${\alpha}$, ${\beta}$ > 1 are real constants, $u_+=max\{u,0\}$, ${\phi}_{00}$ is the eigenfunction corresponding to the positive eigenvalue ${\lambda}_00=1$ of the eigenvalue problem $u_{tt}+u_{xxxx}={\lambda}_{mn}u$. We show that the system has a positive solution under suitable conditions on the matrix $A=\(\array{0&a\\b&0}\)$, s > 0, t > 0, and next show that the system has another solution for the same conditions on A by the linking arguments.

• Progress in Superconductivity
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• v.6 no.1
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• pp.13-18
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• 2004

High-.ate in-situ$ YBa_2$Cu$Cu_3$$O_{7-x}$ (YBCO) film growth was demonstrated by means of the electron beam co-evaporation. Even though our oxygen pressure is low, ∼$5 ${\times}$10^{-5}$ Torr, we can synthesize as-grown superconducting YBCO films at a deposition rate of around 10 nm/s. Relatively high temperatures of around 90$0^{\circ}C$ was necessary in this process so far, and it suggests that this temperature at a given oxygen activity allows a Ba-Cu-O liquid formation along with an YBCO epitaxy. Local critical current density shows a clear correlation with local resistivity. Homogeneous transport properties with a large critical current density ($4 ∼ 5 MA/\textrm{cm}^2$ at 77K, 0T) are observed in top faulted region while it is found that the bottom part carries little supercurrent with a large local resistivity. Therefore, it is possible that thickness dependence of critical current density is closely related with a topological variation of good superconducting paths and/or grains in the film bodies. The information derived from it may be useful in the characterization and optimization of superconducting films for electrical power and other applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.51-51
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• 2011

We have grown nanocrystalline graphite on sapphire substrate by using solid carbon source molecular beam epitaxy. Changes of structure from amorphous carbon to nanocrystalline graphite controlled by the growth temperature have been investigated by Raman spectroscopy. Raman spectra show D, G, and 2D peaks, whose intensities vary on the growth temperature. Atomic force microscopy reveals that the surface is very flat. Sapphire substrates of different cutting direction produce similar results. Simulations suggest that the interaction between carbon and oxygen causes disorders. Electrical transport measurements exhibit a Dirac-like peak, including a carrier type change by an external gate voltage bias.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.167-168
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• 2006

High quality 3D-heterostructures were constructed by selective area (SA) molecular beam epitaxy (MBE) using a specially patterned GaAs (001) substrate. MBE growth parameters such as substrate temperature, V/III ratio, growth ratio, group V sources ($As_2$, $As_4$) were varied to calibrate the selective area growth conditions. Scanning micro-photoluminescence ($\mu$-PL) measurements and following analysis revealed that the gradually (adiabatically) coupled 2DEG-1D-1DEG field effect transistor (FET) system was realized. This 3D-heterostructure is very promising for the realization of the meso-scopic electronic devices and circuits since it makes it possible to form direct ohmic contact to the (quasi) 1DEG.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.22-26
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• 2001

Microstructures of AlN thin films on Si substrates grown by plasma assisted molecular beam epitaxy were analyzed with various growth temperatures and substrate orientations. Reflection high energy electron diffraction (RHEED) patterns were checked for the in-situ monitoring of the growth condition. X-ray diffraction(XRD), double crystal X-ray diffraction (DCXD), and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the microstructure of the films after growth. On Si(100) sub-strates, AlN thin films were grown mostly along the hexagonal c-axis orientation at temperature higher than $850^{\circ}C$. On the other hand the AlN films on Si(111) were epitaxially grown with directional coherencies in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112). The microstructure of AlN thin films on Si(111) substrates, with a full width at half maximum of almost 3000 arcsec at 2$\theta$=$36.2^{\circ}$, showed that the single crystal films were grown, even if they includ a lot of crystal defects such as dislocations and stacking faults.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.207-215
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• 1997

Aluminum (Al) thin films were deposited on the Si(100) and TiN(60 nm)/Si (100) substrate by the ionized cluster beam deposition (ICBD) method. The characteristics of thin films were examined by the $\alpha$-step, four-point-probe, Scanning Electron Spectroscopy (SEM), Auger Electron Spectroscopy (AES). The growth rate of the Al thin film increased and the resistivity decreased as the crucible temperature increased. At the crucible temperature $1800^{\circ}C$, the microstructure of Al thin film deposited was smooth and continuous the resistivity decreased as the acceleration voltage increased. Also, the minimum resistivity in Si(100) substrate and TiN(60 nm)/Si(100) substrate were 3.4 $\mu \Omega \textrm {cm}$, 3.6 $\mu \Omega \textrm {cm}$ at the acceleration voltage 4 kV and 2 kV respectively. From the AES spectrumt 14 wasn't detected any impurities In the Al thin film. Therefore the resistivity of Al thin film was affected by the microstructure of film.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.45 no.5
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• pp.285-293
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• 2019

Objectives: This study examined the effects of plasma-rich growth factors (PRGF) on accelerating bone regeneration/repair in fresh extraction sockets, and determined the quality and quantity of bone by assessing the bone density using cone-beam computed tomography (CBCT). Materials and Methods: Twenty patients, who had undergone bilateral extractions, were included in this study. In one extraction socket, PRGF was used and covered with an autologous fibrin plug. Nothing was used in the opposite side extraction socket. Thirteen weeks post extraction, the level of bone regeneration was evaluated on both sides with CBCT. Results: At the end of the study, the mean bone density according to the Hounsfield units (HU) in the control group and PRGF group was 500.05 HU (type III bone type) and 647.95 HU (type II bone type), respectively. Conclusion: This study recommends the use of PRGF in post extraction sites to accelerate the rate of bone regeneration and improve the quality of regenerated bone. The technique to process PRGF was simple compared to previously mentioned techniques used for platelet-rich plasma (PRP) preparation. PRP preparation requires a two-cycle centrifugation procedure, leading to a longer processing time.

• Imaging Science in Dentistry
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• v.52 no.1
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• pp.19-25
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• 2022

Purpose: This study evaluated the distance from the posterior root apices to the maxillary sinus floor (MSF) and the frequency of roots touching or protruding through the MSF using cone-beam computed tomography (CBCT). Materials and Methods: This study included 100 subjects divided into different vertical and anteroposterior skeletal growth patterns. On CBCT images, the distance from the posterior root apices to MSF was measured and the frequency of roots touching or protruding through the MSF was evaluated using NNT software (version 5.3.0.0; ImageWorks, Elmsford, NY, USA). Results: No statistically significant differences were found in the distance from the posterior root apices to the MSF among vertical skeletal groups (P>0.05). The palatal roots of the first molar and the palatal, mesio-buccal and disto-buccal roots of the second molars had significantly less distance from MSF in skeletal class II than in class III (P<0.05). The high-angle group had the highest frequencies of roots touching or protruding into the maxillary sinus (49.8%); the lowest proportion of these roots was found in skeletal class III (28.3%) and the highest proportion in class II (50.3%). Males had shorter distances from the posterior root apices to the MSF and higher frequencies of roots protruding through or touching the MSF than females. Conclusion: Anteroposterior skeletal growth patterns and sex affected the distances from the maxillary posterior roots to the MSF. The frequency of roots protruding into or touching the sinus was affected by both vertical and anteroposterior skeletal groups and sex. These findings have implications for dental practice.

• Journal of Applied Biological Chemistry
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• v.51 no.3
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• pp.117-122
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• 2008

Inactivation of Agrobacterium tumefaciens was evaluated on the inoculated fresh Radix Ginseng by electron beam irradiation or aqueous chlorine dioxide ($ClO_2$) treatment. Two groups of fresh ginsengs were prepared and inoculated with A. tumefaciens. One group was then irradiated at 0, 2, and 4 kGy using an electron beam accelerator, and the other group was treated with 0, 50, and 100 ppm of aqueous $ClO_2$. Microbiological data indicated that populations of A. tumefaciens significantly decreased with increasing irradiation dose or aqueous $ClO_2$ concentration. In particular, A. tumefaciens was eliminated by irradiation at 4 kGy, and 100 ppm $ClO_2$ treatment reduced the populations of A. tumefaciens by 1.44 log CFU/g. These results suggest that electron beam irradiation or aqueous $ClO_2$ treatment can be useful in improving the microbial safety of fresh ginsengs during storage.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.73-73
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• 1999

A large area negative metal ion beam source is developed. Kinetic ion beam of the incident metal ions yields a whole nucleation and growth phenomena compared to the conventional thin film deposition processes. At the initial deposition step one can engineer the surface and interface by tuning the energy of the incident metal ion beams. Smoothness and shallow implantation can be tailored according to the desired application process. Surface chemistry and nucleation process is also controlled by the energy of the direct metal ion beams. Each individual metal ion beams with specific energy undergoes super-thermodynamic reactions and nucleation. degree of formation of tetrahedral Sp3 carbon films and beta-carbon nitride directly depends on the energy of the ion beams. Grain size and formation of polycrystalline Si, at temperatures lower than 500deg. C is obtained and controlled by the energy of the incident Si-ion beams. The large area metal ion source combines the advantages of those magnetron sputter and SKIONs prior cesium activated metal ion source. The ion beam source produces uniform amorphous diamond films over 6 diameter. The films are now investigated for applications such as field emission display emitter materials, protective coatings for computer hard disk and head, and other protective optical coatings. The performance of the ion beam source and recent applications will be presented.