Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.06a
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- Pages.167-168
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- 2006
Realization of 1D-2DEG Composite Nanowire FET by Selective Area Molecular Beam Epitaxy
선택적 분자선 에피택시 방법에 의한 1D-2DEG 혼성 나노선 FET의 구현
- Kim, Yun-Joo (Korea University) ;
- Kim, Eun-Hong (Korea University) ;
- Seo, Yoo-Jung (Korea University) ;
- Kim, Dong-Ho (Korea University) ;
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Hahn, Cheol-Koo
(KETI) ;
- Ogura, Mutsuo (AIST) ;
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Kim, Tae-Geun
(Korea University)
- Published : 2006.06.22
Abstract
High quality 3D-heterostructures were constructed by selective area (SA) molecular beam epitaxy (MBE) using a specially patterned GaAs (001) substrate. MBE growth parameters such as substrate temperature, V/III ratio, growth ratio, group V sources (