한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2011년도 제40회 동계학술대회 초록집
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- Pages.51-51
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- 2011
Growth of Nanocrystalline Graphite on Sapphire by Solid Carbon Source Molecular Beam Epitaxy
- Jerng, S.K. (Department of Physics and Graphene Research Institute, Sejong University) ;
- Yu, D.S. (Department of Physics and Graphene Research Institute, Sejong University) ;
- Kim, Y.S. (Department of Physics and Graphene Research Institute, Sejong University) ;
- Ryou, Jung-A (Department of Physics and Graphene Research Institute, Sejong University) ;
- Hong, Suk-Lyun (Department of Physics and Graphene Research Institute, Sejong University) ;
- Kim, C. (Department of Physics, Ewha Womans University) ;
- Yoon, S. (Department of Physics, Ewha Womans University) ;
- Efetov, D.K. (Department of Physics, Columbia University) ;
- Kim, P. (Department of Physics, Columbia University) ;
- Chun, S.H. (Department of Physics and Graphene Research Institute, Sejong University)
- 발행 : 2011.02.09
초록
We have grown nanocrystalline graphite on sapphire substrate by using solid carbon source molecular beam epitaxy. Changes of structure from amorphous carbon to nanocrystalline graphite controlled by the growth temperature have been investigated by Raman spectroscopy. Raman spectra show D, G, and 2D peaks, whose intensities vary on the growth temperature. Atomic force microscopy reveals that the surface is very flat. Sapphire substrates of different cutting direction produce similar results. Simulations suggest that the interaction between carbon and oxygen causes disorders. Electrical transport measurements exhibit a Dirac-like peak, including a carrier type change by an external gate voltage bias.