• The Korean Journal of Ceramics
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• 제3권3호
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• pp.173-176
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• 1997

Direct metal ion beam deposition is considered to be a whole new thin film deposition technique. Unlike other conventional thin film deposition processes, the individual deposition particles carry its own ion beam energies which are directly coupled for the formation of this films. Due to the nature of ion beams, the energies can be controlled precisely and eventually can be tuned for optimizing the process. SKION's negative C- ion beam source is used to investigate the initial nucleation mechanism and growth. Strong C- ion beam energy dependence has been observed. Complete phase control of sp3 and sp3, control of the C/SiC/Si interface layer, control of crystalline and amorphous mode growth, and optimization of the physical properties for corresponding applications can be achieved.

• 식물조직배양학회지
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• 제27권2호
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• pp.109-115
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• 2000

배양 중인 담배의 약과 캘러스, 그리고 종자에 중이온 ($^{14}$ N 또는 $^{20}$ Ne) beam을 조사하여 중이온 beam 조사가 약의 반응, 캘러스의 생장, 종자의 발아와 초기 생장에 미치는 영향을 조사하였다. 중이온 beam을 조사하기 전 10일간 preculture한 다음 beam을 조사한 약은 $^{14}$ N, $^{20}$ Ne 모두 20Gy 이상의 선량에서 캘러스 또는 신초유도가 없이 고사하였다. 배양 중인 캘러스는 $^{14}$ N 와 $^{20}$ Ne 이온 beam의 조사로 상대생장율이 감소하였고, 중이온 beam 조사 2주 후부터는 50 Gy 이상 선량 처리구에서 심하게 갈변하였다. 종자에 미치는 중이온 beam 조사의 영향으로 수분을 처리한 후 또는 수분 처리 없이 beam을 조사한 종자 모두에서 선종에 관계없이 선량이 증가함에 따라 발아를 지연시키며 유묘의 초기 생장을 억제하였다. 또한 수분을 흡수시킨 후 중이온 beam을 조사한 경우가 수분을 흡수시키지 않고 beam을 조사한 경우 보다 종자의 발아를 심하게 억제시켰다. 건조 상태의 종자에 중이온 beam을 조사한 경우 피조사체들의 특성과 생장의 초기단계에서 형태적 변이체를 검토하는데는 여과지를 이용한 방법보다 기내에서 배양하는 방법이 보다 효과적이었다.

• 한국표면공학회지
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• 제43권4호
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• pp.170-175
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• 2010

The GaAs epitaxial layers were grown on Si(100) substrates by molecular beam epitaxy(MBE) using the two-step method. The Si(100) substrates were cleaned with different surface cleaning method of vacuum heating, As-beam, and Ga-beam at the substrate temperature of $800^{\circ}C$. Growth temperature and thickness of the GaAs epitaxial layer were $800^{\circ}C$ and 1 ${\mu}m$, respectively. The surface structure and epitaxial growth were observed by reflection high-energy electron diffraction(RHEED) and scanning electron microscope(SEM). Just surface structure of the Si(100) substrate cleaned by Ga-beam at $800^{\circ}C$ shows double domain ($2{\times}1$). RHEED patterns of the GaAs epitaxial layers grown on Si(100) substrates with cleaning method of vacuum heating, As-beam, and Ga-beam show spot-like, ($2{\times}4$) with spot, and clear ($2{\times}4$). From SEM, it is found that the GaAs epitaxial layers grown on Si(100) substrates with Ga-beam cleaning has a high quality.

• 한국진공학회지
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• 제5권3호
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• pp.199-205
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• 1996

InGaAs 박막의 facet 성장을 연구하기 위하여 triethygallium(TEGa), trimethylindium (TMIn)과 사전 열분해하지 않은 monoethylarsine (MEAs)을 사용하여 chemical beam epitaxy (CBE) 법으로 InGaAs 박막을 선택적으로 성장시켰다. 성장 온도와 패턴의 방향에 따라 facet 형성이 매우 다르게 나타났다. 마스크를 [11] 방향으로 제작한 기판에서는 facet의 면이 (311), (377)과 (11)의 여러 면이 형성되었으나 성장 온도가 올라감에 따라 (311)한 면으로 발전하였다. 또한 마스크를 [011]방향으로 하였을 때는, 성장 온도가 증가함에 따라 facet은 (11)h가 (111)면에서 (111)면으로 변하였다. 이러한 결과들은 측면에서 원료가스의 표면 이동 거리가 성장 온도에 따라서 변화하는 차이에 기인하는 것으로 믿어진다. U자 형태를 가지는 (100)의 윗면은 간단한 dangling bond 모형으로 설명할수 있었다.

• 한국재료학회지
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• 제22권10호
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• pp.539-544
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• 2012

We have grown AlN nanorods and AlN films using plasma-assisted molecular beam epitaxy by changing the Al source flux. Plasma-assisted molecular beam epitaxy of AlN was performed on c-plane $Al_2O_3$ substrates with different levels of aluminum (Al) flux but with the same nitrogen flux. Growth behavior of AlN was strongly affected by Al flux, as determined by in-situ reflection high energy electron diffraction. Prior to the growth, nitridation of the $Al_2O_3$ substrate was performed and a two-dimensionally grown AlN layer was formed by the nitridation process, in which the epitaxial relationship was determined to be [11-20]AlN//[10-10]$Al_2O_3$, and [10-10]AlN//[11-20]$Al_2O_3$. In the growth of AlN films after nitridation, vertically aligned nanorod-structured AlN was grown with a growth rate of $1.6{\mu}m/h$, in which the growth direction was <0001>, for low Al flux. However, with high Al flux, Al droplets with diameters of about $8{\mu}m$ were found, which implies an Al-rich growth environment. With moderate Al flux conditions, epitaxial AlN films were grown. Growth was maintained in two-dimensional or three-dimensional growth mode depending on the Al flux during the growth; however, final growth occurred in three-dimensional growth mode. A lowest root mean square roughness of 0.6 nm (for $2{\mu}m{\times}2{\mu}m$ area) was obtained, which indicates a very flat surface.

• 한국자원식물학회지
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• 제18권3호
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• pp.462-469
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• 2005

Effects of proton beam irradiation on seed germination and growth pattern of tobacco (Nicotiana tabacum L. cv. BY-4; N. plumbaginifolia) and rice (Oryasativa L.) plants were estimated to develop the efficient conditions of irradiation. Seed germination rate was decreased by increasing the proton beam the current and the beam irradiation time in both tobacco and rice seeds. The beam irradiation conditions showing $50\%$ germination were over 60 sec at 10 nA, approximately 5 sec at 100 nA and at 500 nA beam current in tobacco seeds. And the conditions of $50\%$ germination were 60 sec at 10 nA, and 100 nA and 30 sec at 500nA in rice (cv. Dongjin 1) seeds. The growth of irradiated plants was decreased, but significant difference in morphological changes was not observed by the proton beam treatment. The proton beam is able to use as a mutagen, but some of the factors including beam size and beam detector-system must be established for efficient usage of the beam.

• 한국표면공학회지
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• 제43권4호
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• pp.176-179
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• 2010

The InAs thin films were grown on GaAs(100) substrate with $2^{\circ}C$ tilted toward [$0\bar{1}\bar{1}$] with different As beam equivalent pressure (BEP) by using molecular beam epitaxy. Growth temperature and thickness of the InAs thin films were $480^{\circ}C$ and 0.5 ${\mu}m$, respectively. We studied the relation between the As BEP and the properties of InAs thin films. The properties of InAs thin films were observed by reflection high-energy electron diffraction (RHEED), optical microscope, and Hall effect. The growth, monitored by RHEED, was produced through an initial 2D (2-dimensional) nucleation mode which was followed by a period of 3D (3-dimensional) island growth mode. Then, the 2D growth recovered after a few minutes and the streak RHEED pattern remained clear till the end of growth. The crystal quality of InAs thin films is dependent strongly on the As BEP. When the As BEP is $3.6{\times}10^{-6}$ Torr, the InAs thin film has a high electron mobility of 10,952 $cm^2/Vs$ at room temperature.

• 열처리공학회지
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• 제18권4호
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• pp.229-234
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• 2005

Effect of incident ion beam energy on microstructure and adhesion behavior of TiN thin films were studied. Without ion beam assist, TiN film showed (111) growth mode which was thought to have the lowest deformation energy. As the ion beam assist energy increased, TiN film growth mode was changed from (111) to (200) mode. On the Si(100) substrate the critical incident energy for growth mode change was 100 eV/atom, however the critical assist energy was 121 eV/atom on the STD61 substrate. Grain size of TiN films increased with the assist ion beam energy. Finally, adhesion strength of TiN films bombarded above the critical ion assist energy showed 4~5 times higher values than that with lower bombard ion energy.

• Journal of Magnetics
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• 제10권3호
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• pp.108-112
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• 2005

GaAs nanowires were grown on GaAs (111)B substrates in a gas source molecular beam epitaxy system, using self-assembled Au particles with diameters between 25 and 200 nm as the catalytic agents. The growth rate and structure of the nanowires were investigated for substrate temperatures between 500 and $600^{\circ}C$ to study the mass transport mechanisms that drive the growth of these crystals. The possibilities for fabrication of novel magnetic nanostructures by suitable choice of growth conditions are discussed.

• Applied Science and Convergence Technology
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• 제23권5호
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• pp.289-295
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• 2014

${\alpha}-V_2O_5$ nanorods were grown by means of electron beam irradiation and thermal oxidation methods and the visible emission properties of the nanorods grown by both methods were investigated. The growth and crystallinity of the nanorods were greatly enhanced by the insertion of a buffer layer. The emission spectra of the nanorods grown by thermal oxidation and electron beam irradiation showed a peak centered at 710~720 nm, which is believed to be due to oxygen vacancies introduced during the growth process. Also, the emission peak centered at 530 nm observed in the $V_2O_5$ nanorods grown by electron beam irradiation was considered to be due to the band edge transition as a result of the enhanced crystallinity.