[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.4283/JMAG.2005.10.3.108

Potential for Novel Magnetic Structures by Nanowire Growth Mechanisms

Lapierre R.R. (Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University)
Plante M.C. (Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University)

Publication Information

Journal of Magnetics / v.10, no.3, 2005 , pp. 108-112 More about this Journal

Abstract

GaAs nanowires were grown on GaAs (111)B substrates in a gas source molecular beam epitaxy system, using self-assembled Au particles with diameters between 25 and 200 nm as the catalytic agents. The growth rate and structure of the nanowires were investigated for substrate temperatures between 500 and $600^{\circ}C$ to study the mass transport mechanisms that drive the growth of these crystals. The possibilities for fabrication of novel magnetic nanostructures by suitable choice of growth conditions are discussed.

Keywords

Nanowires; Molecular beam epitaxy; Gallium arsenide;

Citations & Related Records

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