• Title/Summary/Keyword: barrier performance

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Placement of Colloidal Silica gel for the construction of a subsurface containment system

  • Kim, Meejeong;Park, Joo-Yang
    • Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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    • 2001.04a
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    • pp.66-69
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    • 2001
  • A subsurface containment system which is constructed by pumping a gelling liquid (Colloidal Silica) into the unsaturated medium is investigated by developing a mathematical model and conducting numerical simulations. The proposed model is verified by comparing experimentally and numerically determined hydraulic conductivities of gel-treated soil columns at different Colloidal Silica (CS) injection volumes. The numerical experiments indicate that an impermeable gel layer is formed within the time period twice the gel-point. At the Same normalized time, the CS solutions with lower NaCl concentrations result ill further migration and poor Performance in plugging the pore space.

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Thermal Comfort Aspects of Pesticide-protective Clothing Made with Nonwoven Fabrics

  • Choi Jong-Myoung;Tanabe Shin-Ichi
    • International Journal of Human Ecology
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    • v.3 no.1
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    • pp.55-72
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    • 2002
  • The purpose of this study was to evaluate the thermal resistance of pesticideprotective clothing and to investigate its subjective wear performance. Three different nonwoven fabrics, which provide barrier properties against water and pesticide, were used to manufacture the experimental clothing: spunbonded nonwoven (SB), spunbonded/meltblown/spunbonded nonwoven (SM), and spunlaced nonwoven (SL). The thermal insulation values of the experimental clothing were measured with a thermal manikin, and other wear trials were performed on human subjects in a climate chamber at $28^{\circ}C$, with 70% R.H. and air movement at less than 0.15m/s. Our results found that the thermal resistance was lower in the SB experimental clothing than in the others; that the mean skin temperature of subjects who wore the experimental clothing made with SL was significantly lower than that of subjects who wore the SB and SM clothing; and that the microclimate temperature and humidity with SB were significantly higher than that of the others. Overall, the experimental clothing made with SL was more comfortable than the others in terms of subjective wear sensations.

Novel host and electron blocking materials for efficient and long lifetime phosphorescent OLEDs

  • Vestweber, Horst;Gerhard, Anja;Kaiser, Joachim;Heil, Holger;Kroeber, Jonas;Pflumm, Christof;Stoessel, Philipp;Joosten, Dominik;Buesing, Arne;Fortte, Rocco;Parham, Amir;Boehm, Edgar
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.925-927
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    • 2008
  • In order to improve the performance in green phosphorescent OLED devices, Merck has developed novel host and electron blocking materials. The newly developed host materials improve the device lifetime by a factor of 3. The newly developed electron blocking materials having not only electron but also exciton barrier properties increase the efficiency of the device by a factor of 1.4. Comparable results were achieved in phosphorescent red systems with further host materials.

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A Study on Temperature of Ozonizer (오존발생기의 온도에 관한 연구)

  • Kim, Young-Bae;Cho, Kook-Hee;Choi, Moon-Ki;Lee, Hyeong-Ho
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1652-1654
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    • 2001
  • A comprehensive model of ozone generation in dielectric barrier discharges is presented. The model combines the physical processes in the microdischarges with the chemistry of ozone formation. It is based on an extensive reaction scheme including the major electronic and ionic processes. The importance of excited atomic and molecular states is demonstrated. Theoretical limits are given for the ozone production efficiency and the attainable ozone concentration. The most important parameters influencing the performance of ozonizers are identified.

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Ni/Cu Metallization for High Efficiency Silicon Solar Cells (Ni/Cu 전극을 적용한 고효율 실리콘 태양전지의 제작 및 특성 평가)

  • Lee, Eun-Joo;Lee, Soo-Hong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.12
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    • pp.1352-1355
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    • 2004
  • We have applied front contact metallization of plated nickel and copper for high efficiency passivated emitter rear contact(PERC) solar cell. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. The plating technique is a preferred method for commercial solar cell fabrication because it is a room temperature process with high growth rates and good morphology. In this system, the electroless plated Ni is utilized as the contact to silicon and the plated Cu serves as the primary conductor layer instead of traditional solution that are based on Ti/Pd/Ag contact system. Experimental results are shown for over 20 % PERC cells with the Plated Ni/Cu contact system for good performance at low cost.

Electrical Characteristics of Staggered Capacitor ($Si_3N_4$ / HfAlO) for High Performance of Non-volatile Memory

  • Lee, Se-Won;Cho, Won-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.358-358
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    • 2010
  • To improve the programming/erasing speed and leakage current of multiple dielectric stack tunnel barrier engineering (TBE) Non-volatile memory, We propose a new concept called staggered structure of TBE memory. In this study, We fabricated staggered structure capacitor on $Si_3N_4$ stacked HfAlO and measured C-V curve that can observe tunneling characteristic of this device as various annealing temperature compared with that of single layer $SiO_2$ capacitor.

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Charge trap characteristics with $Si_3N_4$ tmp layer thickness ($Si_3N_4$ trap layer의 두께에 따른 charge trap 특성)

  • Jung, Myung-Ho;Kim, Kwan-Su;Park, Goon-Ho;Kim, Min-Soo;Jung, Jong-Wan;Jung, Hong-Bae;Cho, Won-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.124-125
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    • 2008
  • The charge trapping and tunnelling characteristics with various thickness of $Si_3N_4$ layer were investigated for application of TBE (Tunnel Barrier Engineered) non-volatile memory. We confirmed that the critical thickness of no charge trapping was existed with decreasing $Si_3N_4$ thickness. Also, the charge trap centroid x and charge trap density were extracted by using CCS (Constant Current Stress) method. Through the optimized thickness of $Si_3N_4$ layer, it can be improve the performance of non-volatile memory.

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Study on the design of the passenger cars bumper rail to reduce the weight (자동차 범퍼 레일의 경량화 설계에 관한 연구)

  • 김이규;조규종
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2000.11a
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    • pp.563-566
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    • 2000
  • Recently vehicle development trend puts emphasis on cost reduction and performance improvement through weight reduction, and safety security to protect passenger and chassis against external impact. Primary factors effected on vehicle safety are chassis structure, chassis system, and safety equipment like bumper. Research in part of weight reduction is proceeding actively about prohibition of over-design and material through optimal design method. Bumper in these factors is demanded two of all factors, safety security and weight reduction. It is the part that prohibits or reduces a physical impact in low speed crash. Bumper is composed of a few parts but this study exhibits the shape of bumper rail has a role on energy absorption of safety security and weight reduction from structure analysis of bumper rail's variable shape surface.

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La doping into $Pb(Zr,\;Ti)O_{3}$ capacitors on domain structures

  • Yang, Bee-Lyong
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.12 no.3
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    • pp.157-160
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    • 2002
  • The ferroelectric domain variation and electrical performance of $Pb(Zr,Ti)O_{3}$ (PZT) based capacitors through La additions were systematically studied. La substitution up to 10 % was performed to lower the coercive and saturation voltages of epitaxial ferroelectric capacitors grown on Si using a (Ti_{0.9}Al_{0.1})N/Pt$ conducting barrier composite. Ferroelectric capacitors substituted with 10 % La show significantly lower coercive voltage compared to capacitors with 0 % and 3 % La. This is attributed to a systematic microstructure change into $180^{\circ}C$ domain and decrease in the tetragonality (i.e., c/a ratio) of the ferroelectric phase. These capacitors show promise as storage elements in low power memory architectures.

2D Transconductance to Drain Current Ratio Modeling of Dual Material Surrounding Gate Nanoscale SOl MOSFETs

  • Balamurugan, N.B.;Sankaranarayanan, K.;John, M.Fathima
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.9 no.2
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    • pp.110-116
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    • 2009
  • The prominent advantages of Dual Material Surrounding Gate (DMSG) MOSFETs are higher speed, higher current drive, lower power consumption, enhanced short channel immunity and increased packing density, thus promising new opportunities for scaling and advanced design. In this Paper, we present Transconductance-to-drain current ratio and electric field distribution model for dual material surrounding gate (DMSGTs) MOSFETs. Transconductance-to-drain current ratio is a better criterion to access the performance of a device than the transconductance. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.