• Current Photovoltaic Research
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• v.4 no.3
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• pp.114-118
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• 2016

$Cu_{1.8}Zn_{1.2}(Sn_{1-x}Ge_x)S_4$ (CZTGeS) nanocrystals were mechanochemically synthesized from elemental precursor powders without using any organic solvents and any additives. The composition of CZTGeS nanocrystals were systematically varied with different Ge mole fraction (x) from 0.1 to 0.9. The XRD, Raman spectroscopy, high-resolution TEM, and diffuse reflectance studies show that the as-synthesized CZTGeS nanocrystals exhibited consistent changes in various structural and optical properties as a function of x, such as lattice parameters, wave numbers for $A_1$ Raman vibration mode, interplanar distances (d-spacing), and optical bandgap energies. The bandgap energy of the synthesized CZTGeS nanocrystals gradually increases from 1.40 to 1.61 eV with increasing x from 0.1 to 0.9, demonstrating that Ge-doping is useful means to tune the bandgap of mechanochemically synthesized nanocrystals-based kesterite thin-film solar cells. The preliminary solar cell performance is presented with an efficiency of 3.66%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.9
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• pp.576-580
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• 2016

Single-layered transition metal dichalcogenides (TMDs) exhibit more interesting physical properties than those of bulk TMDs owing to the indirect to direct bandgap transition occurring due to quantum confinement. In this research, we demonstrate that layer-by-layer laser etching of molybdenum diselenide ($MoSe_2$) flakes could be controlled by varying the parameters employed in laser irradiation (time, intensity, interval, etc.). We observed a dramatic increase in the photoluminescence (PL) intensity (1.54 eV peak) after etching the samples, indicating that the removal of several layers of $MoSe_2$ led to a change from indirect to direct bandgap. The laser-etched $MoSe_2$ exhibited the single $MoSe_2$ Raman vibration modes at ${\sim}239.4cm^{-1}$ and ${\sim}295cm^{-1}$, associated to out-of-plane $A_{1g}$ and in-plane ${E^1}_{2g}$ Raman modes, respectively. These results indicate that controlling the number of $MoSe_2$ layers by laser etching method could be employed for optimizing the performance of nano-electronic devices.

• Journal of the Semiconductor & Display Technology
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• v.9 no.1
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• pp.35-40
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• 2010

We have investigated the effects of hydrogen injection via in-situ gas addition ($O_2$, $H_2$, or $O_2$ + $H_2$ gas) and plasma post-treatment (Ar or Ar + H plasma) on material properties of ZnO that is considered to be as a channel layer in transparent thin film transistors. The variations in the electrical resistivity, optical transmittance and bandgap energy, and crystal quality of ZnO thin films were characterized in terms of the methods and conditions used in hydrogen injection. The resistivity was significantly decreased by injection of hydrogen; approximately $10^6\;{\Omega}cm$ for as-grown, $1.2\;{\times}\;10^2\;{\Omega}cm$ for in-situ with $O_2/H_2\;=\;2/3$ addition, and $0.1\;{\Omega}cm$ after Ar + H plasma treatment of 90 min. The average transmittance of ZnO films measured at a wavelength of 400-700 nm was gradually increased by increasing the post-treatment time in Ar + H plasma. The optical bandgap energy of ZnO films was almost monotonically increased by decreasing the $O_2/H_2$ ratio in in-situ gas addition or by increasing the post-treatment time in Ar + H plasma, while the post-treatment using Ar plasma hardly affected the bandgap energy. The role of hydrogen in ZnO was discussed by considering the creation and annihilation of oxygen vacancies as well as the formation of shallow donors by hydrogen.

• Journal of information and communication convergence engineering
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• v.7 no.2
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• pp.215-218
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• 2009

In this paper, temperature stable current and voltage references using simple CMOS bias circuit are proposed. To obtain temperature stable characteristics of bias circuit a bandgap reference concept is used in a conventional circuit. The parasitic bipolar transistors or MOS transistors having different threshold voltage are required in a bandgap reference. Thereby the chip area increase or the extra CMOS process is required compared to a standard CMOS process. The proposed reference circuit can be integrated on a single chip by a standard CMOS process without the extra CMOS process. From the simulation results, the reference current variation is less than ${\pm}$0.44% over a temperature range from - $20^{\circ}C$ to $80^{\circ}C$. And the voltage variation is from - 0.02% to 0.1%.

• ETRI Journal
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• v.31 no.2
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• pp.201-208
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• 2009

This paper proposes a spiral-shaped power island structure that can effectively suppress simultaneous switching noise (SSN) when the power plane drives high-speed integrated circuits in a small area. In addition, a new technique is presented which greatly improves the resonance peaks in a stopband by utilizing ${\lambda}$/4 open stubs on a conventional periodic electromagnetic bandgap (EBG) power plane. Both proposed structures are simulated numerically and experimentally verified using commercially available 3D electromagnetic field simulation software. The results demonstrate that they achieve better SSN suppression performance than conventional periodic EBG structures.

• Journal of the Society of Cosmetic Scientists of Korea
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• v.49 no.2
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• pp.159-167
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• 2023

Titanium dioxide (TiO₂) is commonly used in sunscreen formulations to protect the skin surface and prevent the penetration of harmful ultraviolet (UV) rays by the physical scattering action of light. However, a disadvantage of using TiO₂ is that it can cause white turbidity when used on skin due to its inactive mineral ingredient. In addition, when TiO₂ particles are reduced to nanosize to eliminate opacity, they can increase the transmittance of visible light and reduce whitening, but may lead to serious skin problems, such as allergic inflammation. To overcome these issues, the bandgap of TiO₂ was controlled by adjusting the amount of oxygen defect and nitrogen amount, resulting in color TiO₂ tailored to the skin. This innovative technology can reduce the whitening phenomenon and effectively block blue light, which is known to cause skin aging by inducing active oxygen. The bandgap controlled TiO₂ compounds proposed in this study are hypoallergenic, broad-spectrum, and environmentally friendly. Furthermore, these compounds have been shown to significantly enhance sun protection factor (SPF) of sunscreens, demonstrating their compatibility with blue light blocking products.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.51-53
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• 2005

$Zn_{1-x}Cd_xO$ thin films were grown on (0001) sapphire substrates by pulsed laser deposition. The energy bandgap of $Zn_{1-x}Cd_xO$ films decreases withincreasing Cd content. An increase of Cd content also leads to the emission broadening and degraded crystallinity. The absorption edge and ultraviolet emission peak shift to lower energy from 3.357 eV to 3.295 eV and 3.338 eV to 3.157 eV, respectively, with increasing Cd content from 0.3% to 3%. The Stokes' shift between the absorption and emission indicates the increase of localization of exciton with Cd content.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2013.04a
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• pp.733-734
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• 2013

• Advances in nano research
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• v.2 no.3
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• pp.157-172
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• 2014

The three-dimensional Nano-Electronic Modeling toolkit (NEMO 3-D) is an open source software package that allows the atomistic calculation of single-particle electronic states and optical response of various semiconductor structures including bulk materials, quantum dots, impurities, quantum wires, quantum wells and nanocrystals containing millions of atoms. This paper, first, describes a software module introduced in the NEMO 3-D toolkit for the calculation of electronic bandstructure and interband optical transitions in nanowires having wurtzite crystal symmetry. The energetics (Hamiltonian) of the quantum system under study is described via the tight-binding (TB) formalism (including $sp^3$, $sp^3s^*$ and $sp^3d^5s^*$ models as appropriate). Emphasis has been given in the treatment of surface atoms that, if left unpassivated, can lead to the creation of energy states within the bandgap of the sample. Furthermore, the developed software has been validated via the calculation of: a) modulation of the energy bandgap and the effective masses in [0001] oriented wurtzite nanowires as compared to the experimentally reported values in bulk structures, and b) the localization of wavefunctions and the optical anisotropy in GaN/AlN disk-in-wire nanowires.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.671-675
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• 2010

Gallium nitride (GaN), wide bandgap semiconductor, has attracted much attention because they are projected to have much better performance than silicon. In this paper, effects of design parameters change of GaN power static induction transistor (SIT) on the electrical characteristics (breakdown voltage, on resistance) were analyzed by computer simulation. According to the analyzed results, the optimization was performed to get power GaN SIT that has 600 V class breakdown voltage. As a result, we could get optimized 600 V class power GaN SIT that has higher breakdown voltage and lower On resistance with a thin (a several micro-meters) thickness of the channel layer.