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http://dx.doi.org/10.4313/JKEM.2016.29.9.576

A Study on Indirect-Direct Bandgap Structures of 2D-layered Transition Metal Dichalcogenides by Laser Etching  

Moon, Eun-A (Department of Electricity, Chosun College of Science & Technology)
Ko, Pil-Ju (Department of Electrical Engineering, Chosun University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.29, no.9, 2016 , pp. 576-580 More about this Journal
Abstract
Single-layered transition metal dichalcogenides (TMDs) exhibit more interesting physical properties than those of bulk TMDs owing to the indirect to direct bandgap transition occurring due to quantum confinement. In this research, we demonstrate that layer-by-layer laser etching of molybdenum diselenide ($MoSe_2$) flakes could be controlled by varying the parameters employed in laser irradiation (time, intensity, interval, etc.). We observed a dramatic increase in the photoluminescence (PL) intensity (1.54 eV peak) after etching the samples, indicating that the removal of several layers of $MoSe_2$ led to a change from indirect to direct bandgap. The laser-etched $MoSe_2$ exhibited the single $MoSe_2$ Raman vibration modes at ${\sim}239.4cm^{-1}$ and ${\sim}295cm^{-1}$, associated to out-of-plane $A_{1g}$ and in-plane ${E^1}_{2g}$ Raman modes, respectively. These results indicate that controlling the number of $MoSe_2$ layers by laser etching method could be employed for optimizing the performance of nano-electronic devices.
Keywords
$MoSe_2$; Laser etching; TMDs; Raman; Photoluminescence;
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