1 |
P. Barquinha, A. Pimentel, A. Marques, L. Pereira, R. Martins, and E. Fortunato, "Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide," J. Non- Cryst. Solids, Vol.352, pp.1749-1752, 2006.
DOI
ScienceOn
|
2 |
C. G. Vand der Walle, "Hydrogen as a Cause of Doping in Zinc Oxide," Phys. Rev. Lett., Vol. 85, pp. 1012-1015, 2000.
DOI
ScienceOn
|
3 |
J. H. Na, M. Kitamura, and Y. Arakawa, "High fieldeffect mobility amorphous InGaZnO transistors with aluminum electrodes," Appl. Phys. Lett., Vol. 93, pp. 063501, 2008.
DOI
ScienceOn
|
4 |
G. Goncalves, E. Elangovan, P. Barquinha, L. Pereira, R. Martins, and E. Fortunato, "Influence of post-annealing temperature on the properties exhibited by ITO, IZO and GZO thin films", Thin Solid Films, 515 (2007) 8562.
DOI
ScienceOn
|
5 |
P. F. Carcia, R. S. McLean, M. H. Reilly, and G. Nunes Jr., "Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering, "Appl. Phys. Lett., Vol. 82, pp. 1117, 2008.
|
6 |
R. Navamathavan, C. K. Choi, E. J. Yang, J. H. Lim, D. K. Hwang, and S. J. Park, "Electrical properties of ZnO-based bottom-gate thin film transistors fabricated," J. of Alloys and Compounds, Vol. 475, pp. 889-892, 2009.
DOI
ScienceOn
|
7 |
R. B. M. Cross, M. M. D. Souza, S. C. Deane, and N. D. Young. "A Comparison of the Performance and Stability of ZnO-TFTs With Silicon Dioxide and Nitride as Gate Insulators," IEEE Trans. on Electron Dev., Vol.55, pp.1109-1115, 2008.
DOI
|
8 |
S. P. Chang, Y. W. Song, S. G. Lee, S. Y. Lee, and B. K. Ju, "Efficient suppression of charge trapping in ZnO-based transparent thin film transistors with novel structure," Appl. Phys. Lett., Vol. 92, pp. 192104, 2008.
DOI
ScienceOn
|
9 |
W. J. Park, H. S. Shin, B. D. Ahn, G. H. Kim, S. M. Lee, K. H. Kim, and H. J. Kim, "Investigation on doping dependency of solution-processed Ga-doped ZnO thin film transistor," Appl. Phys. Lett., Vol. 93, pp. 083508, 2008.
DOI
ScienceOn
|
10 |
R. L. Hoffman, B. J. Norris, and J. F. Wager, "ZnO-based transparent thin-film transistors," Appl. Phys. Lett., Vol. 83, pp.733, 2003.
|
11 |
S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, "Recent progress in processing and properties of ZnO," Progress in Materials Science, Vol.50, pp.293-340, 2005.
DOI
ScienceOn
|
12 |
M. K. Hudait, P. Modak, and S. B. Krupanidhi, "Si incorporation and Burstein-Moss shift in n-type GaAs," Mater. Sci. Eng., Vol. 56, pp. 1, 1999.
|
13 |
J. Kennedy, A. Markwitz, Z. Li, W. Gao, C. Kendrick, S. M. Durbin, and R. Reeves, "Modification of electrical conductivity in RF magnetron sputtered ZnO films by low-energy hydrogen ion implantation," Current Appl. Phys., Vol.6, pp.495-498, 2006.
DOI
ScienceOn
|