• 한국자기학회지
• /
• 제5권5호
• /
• pp.663-666
• /
• 1995

The domain wall motion coercivity, $H_{c}$, of magnetic materials arises from the dependence of the wall energy on localized changes in material parameters (magnetization, anisotropy, exchange energy densities). However, in an otherwise perfectly homogeneous material, the domain wall energy might change due to the change in the volume of the wall versus the wall position. Thus, any surface roughness contributes to the coercivity. Assuming different two-dimensional surface profiles, characterized by average wavelengths ${\lambda}_{x}$ and ${\lambda}_{y}$, and relative thickness variations dh/h, the coercivity due to the surface roughness has been calculated. Compared to the one dimensional case, the 2D coercivity is reduced. Depending on the ratio of ${\lambda}$ to the domain wall width, $H_{c}$ has a maximum around 2, and increasing with dh/h. With the decreasing thickness of the thin film and GMR heads, it might be the domain factor in determining the coercivity.

• 반도체디스플레이기술학회지
• /
• 제22권4호
• /
• pp.19-25
• /
• 2023

With an attempt to investigate the correlation between the internal pressure distribution of slit nozzle and the thickness uniformity of slot-coated thin films, we have performed computational fluid dynamics (CFD) simulations of slit nozzles and slot coating of high-viscosity (4,800 cPs) polydimethylsiloxane (PDMS) using a gantry slot-die coater. We have calculated the coefficient of variation (CV) to quantify the pressure and velocity distributions inside the slit nozzle and the thickness non-uniformity of slot-coated PDMS films. The pressure distribution inside the cavity and the velocity distribution at the outlet are analyzed by varying the shim thickness and flow rate. We have shown that the cavity pressure uniformity and film thickness uniformity are enhanced by reducing the shim thickness. It is addressed that the CV value of the cavity pressure that can ensure the thickness non-uniformity of less than 5% is equal to and less than 1%, which is achievable with the shim thickness of 150 ㎛. It is also found that as the flow rate increases, the average cavity pressure is increased with the CV value of the pressure unchanged and the maximum coating speed is increased. As the shim thickness is reduced, however, the maximum coating speed and flow rate decrease. The highly uniform PDMS films shows the tensile strain as high as 180%, which can be used as a stretchable substrate.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제5권1호
• /
• pp.38-44
• /
• 2005

Pyrolyzed polyimide is explored in terms of MEMS material. This paper describes chemical, electrical, mechanical properties of pyrolyzed polyimide (PIX-1400) thin film as MEMS material. When polyimide thin film was pyrolyzed at $800^{\circ}C$ for 60 minutes in $N_{2}$ ambient, the residual ratio of pyrolyzed film thickness measured with a surface profiler is about 49 %, and the resistivity is about $2.17{\times}10^{-2}\;{Omega}cm$. From the result of the load-deflection test, the estimated Young's modulus and initial average stress of pyrolyzed polyimide are 67 GPa and 30 MPa, respectively. As one demonstration of MEMS structures of pyrolyzed polyimide, the fabrication method of the microbridge structure is proposed for a micro heater and a resonator.

• 한국세라믹학회지
• /
• 제30권9호
• /
• pp.775-783
• /
• 1993

TiO2-SiO2 system anti-reflective(AR) film was prepared to decrease reflectance on the glass surface. The experiments were carried out as fellow, 1) preparation & hydrolysis of TiO2-SiO2 system sols. 2) glass dipping, and 3) drying & heat treatment. We investigated the refractive index and thickness of film with viscosity, zeta-potential of sol, sol concentration, withdrawal speed, drying and heat treatment condition. As a result, we prepared good qualitative Quarter-Half-Quarter type anti-reflective film that had minimum, 0.02% and average reflectance, 0.087% in the visible region.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1998년도 하계학술대회 논문집 G
• /
• pp.2533-2535
• /
• 1998

In this paper, an effect of drive-in process temperature on the residual stress profile of the p+ silicon film has been investigated. The residual stress profile has been calculated as the fourth-order polynomials. All coefficients of the polynomials have been determined from the measurement of the vertical deflections of the p+ silicon cantilevers with various thickness and the tip displacement of the p+ silicon rotating beam. From the determination results of the residual stress profile, the average stress of the film thermally oxidized at 1000 $^{\circ}C$ is 15 MPa and that of the film oxidized at 1100 $^{\circ}C$ is 25 MPa. The profile of the residual stress through the high temperature drive-in process has a steeper gradient than the other case.

• Transactions on Electrical and Electronic Materials
• /
• 제17권4호
• /
• pp.235-237
• /
• 2016

Oxide/metal/oxide (OMO) thin films were fabricated using amorphous indium-gallium-zinc-oxide (a-IGZO) and an Ag metal layer on a glass substrate at room temperature. The optical and electrical properties of the a-IGZO/Ag/a-IGZO samples changed systemically depending on the thickness of the Ag layer. The transmittance in the visible range tends to decrease as the Ag thickness increases while the resistivity, carrier concentration, and Hall mobility tend to improve. The a-IGZO/Ag (13 nm)/a-IGZO thin film with the optimum Ag thickness showed an average transmittance (T_av) of 71.7%, resistivity of 6.63 × 10⁻⁵ Ω·cm and Hall mobility of 15.22 cm²V⁻¹s⁻¹.

• 한국윤활학회:학술대회논문집
• /
• 한국윤활학회 2001년도 제33회 춘계학술대회 개최
• /
• pp.271-280
• /
• 2001

An NAO friction material (low-steel type) containing 15 ingredients was investigated to study the role of transfer film on the friction characteristics. The friction material specimens with extra 100% of each ingredient were tested using a pad-on-disk type tribotester. A non-destructive method of measuring the transfer film was developed by considering the electric resistance of the transfer film. Results showed that solid lubricants and iron powder assisted transfer film formation on the rotor surface. Average friction coefficient was independent of transfer film thickness in this experiment. On the other hand, the thick transfer film on the rotor surface reduced the amplitude of friction oscillation under temperature conditions ( 250$^{\circ}C$) that transfer film forms.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.145.2-145.2
• /
• 2016

We report the phase transformation of Co thin films on a sapphire substrate induced by laser irradiation. As grown Co films were initially strained and tetragonally distorted. With low power laser irradiation, the surface was ruptured and irregular holes were formed. As the laser power was increased, the films changed into round shape Co nanocrystals with well-defined 6-fold structure. By measuring the XRD of Co nanostructure as a function of laser energy densities, we found that the change of morphological shapes from films to nanocrystals was accompanied with decrease of the tetragonal distortion as well as strain relaxation. By measuring the size distribution of nanocrystals as a function of film thickness, the average diameter is proportional to 1.7 power of the film thickness which was consistent with the prediction of thin film hydrodynamic (TFT) dwetting theory. Finally, we fabricated the formation of size controlling nanocrystals on the sapphire substrate without strain.

• Journal of Electrical Engineering and Technology
• /
• 제1권1호
• /
• pp.110-113
• /
• 2006

A high rate deposition sputtering process of magnesium oxide thin film in oxide mode has been developed using a 20 kW unipolar pulsed power supply. The power supply was operated at a maximum constant voltage of 500 V and a constant current of 40 A. The pulse repetition rate and the duty were changed in the ranges of $10\sim50$ kHz and $10\sim60%$, respectively. The deposition rate increased with rising incident power to the target. Maximum incident power to the magnesium target was obtained by the control of frequency, duty and current. The deposition rate of a moving state was 9 nm m/min at the average power of 1.5 kW. This result shows higher deposition rate than any other previous work involving reactive sputtering in oxide mode. The thickness uniformities over the entire substrate area of $982mm{\times}563mm$ were observed at the processing pressure of $2.8\sim9.5$ mTorr. The thickness distribution was improved at lower pressure. This technique is proposed for application to a high through-put sputtering system for plasma display panels.

• 한국전기전자재료학회논문지
• /
• 제25권11호
• /
• pp.922-925
• /
• 2012

Single crystalline Au nanowires were successfully synthesized in a tube-type furnace. The Au nanowires were grown by vapor phase synthesis technique using solid-liquid-solid (SLS) mechanism on substrates of corning glass and Si wafer. Prior to Au nanowire synthesis, Au thin film served as both catalyst and source for Au nanowire was prepared by sputtering process. Average length of the grown Au nanowires was approximately 1 ${\mu}m$ on both the corning glass and Si wafer substrates, while the diameter and the density of which were dependent on the thickness of the Au thin film. To induce a super-saturated states for the Au particle catalyst and Au molecules during the Au nanowire synthesis, thickness of the Au catalyst thin film was fixed to 10 nm or 20 nm. Additionally, synthesis of the Au nanowires was carried out without introducing carrier gas in the tube furnace, and synthesis temperature was varied to investigate the temperature effect on the resulting Au nanowire characteristics.