Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1998.07g
- /
- Pages.2533-2535
- /
- 1998
The Effect of Drive-in Process Temperature on the Residual Stress Profile of the p+ Thin Film
후확산 공정 온도가 p+ 박막의 잔류 응력 분포에 미치는 영향
- Jeong, O.C. (Division of Electronics Eng., Ajou University) ;
- Park, T.G. (Division of Electronics Eng., Ajou University) ;
- Yang, S.S. (Division of Electronics Eng., Ajou University)
- Published : 1998.07.20
Abstract
In this paper, an effect of drive-in process temperature on the residual stress profile of the p+ silicon film has been investigated. The residual stress profile has been calculated as the fourth-order polynomials. All coefficients of the polynomials have been determined from the measurement of the vertical deflections of the p+ silicon cantilevers with various thickness and the tip displacement of the p+ silicon rotating beam. From the determination results of the residual stress profile, the average stress of the film thermally oxidized at 1000
Keywords