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http://dx.doi.org/10.4313/TEEM.2016.17.4.235

Optical and Electrical Properties of Oxide Multilayers  

Han, Sangmin (Department of Semiconductor Engineering, Cheongju University)
Yu, Jiao Long (Department of Semiconductor Engineering, Cheongju University)
Lee, Sang Yeol (Department of Semiconductor Engineering, Cheongju University)
Publication Information
Transactions on Electrical and Electronic Materials / v.17, no.4, 2016 , pp. 235-237 More about this Journal
Abstract
Oxide/metal/oxide (OMO) thin films were fabricated using amorphous indium-gallium-zinc-oxide (a-IGZO) and an Ag metal layer on a glass substrate at room temperature. The optical and electrical properties of the a-IGZO/Ag/a-IGZO samples changed systemically depending on the thickness of the Ag layer. The transmittance in the visible range tends to decrease as the Ag thickness increases while the resistivity, carrier concentration, and Hall mobility tend to improve. The a-IGZO/Ag (13 nm)/a-IGZO thin film with the optimum Ag thickness showed an average transmittance (Tav) of 71.7%, resistivity of 6.63 × 10−5 Ω·cm and Hall mobility of 15.22 cm2V−1s−1.
Keywords
a-InGaZnO; Multilayer; Ag thickness; Hall measurement; Transparent conductive oxide;
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