DOI QR코드

DOI QR Code

Synthesis of Au Nanowires Using S-L-S Mechanism

S-L-S 성장기구를 이용한 양질의 골드 나노선 합성

  • No, Im-Jun (School of Electrical Engineering, INHA University) ;
  • Kim, Sung-Hyun (Energy Nano Material Center, Korea Electronics Technology Institute) ;
  • Shin, Paik-Kyun (School of Electrical Engineering, INHA University) ;
  • Cho, Jin-Woo (Energy Nano Material Center, Korea Electronics Technology Institute)
  • 노임준 (인하대학교 전기공학부) ;
  • 김성현 (전자부품연구원 에너지나노소재연구센터) ;
  • 신백균 (인하대학교 전기공학부) ;
  • 조진우 (전자부품연구원 에너지나노소재연구센터)
  • Received : 2012.07.05
  • Accepted : 2012.10.10
  • Published : 2012.11.01

Abstract

Single crystalline Au nanowires were successfully synthesized in a tube-type furnace. The Au nanowires were grown by vapor phase synthesis technique using solid-liquid-solid (SLS) mechanism on substrates of corning glass and Si wafer. Prior to Au nanowire synthesis, Au thin film served as both catalyst and source for Au nanowire was prepared by sputtering process. Average length of the grown Au nanowires was approximately 1 ${\mu}m$ on both the corning glass and Si wafer substrates, while the diameter and the density of which were dependent on the thickness of the Au thin film. To induce a super-saturated states for the Au particle catalyst and Au molecules during the Au nanowire synthesis, thickness of the Au catalyst thin film was fixed to 10 nm or 20 nm. Additionally, synthesis of the Au nanowires was carried out without introducing carrier gas in the tube furnace, and synthesis temperature was varied to investigate the temperature effect on the resulting Au nanowire characteristics.

Keywords

References

  1. Y. Cui, X. Duan, J. Hu, and C. M. Lieber, J. Phys. Chem., B104, 5213 (2000).
  2. W. J. Lee, S. P. Ju, S. J. Sun, and M. H. Weng, Nanotechnology, 17, 3253 (2006). https://doi.org/10.1088/0957-4484/17/13/029
  3. Q. Pu and Y. Leng, J. Chem. Phys., 126, 144707 (2007). https://doi.org/10.1063/1.2717162
  4. K. Gall, J. Diao, and M. L. Dunn, Nano Lett., 4, 2431 (2004). https://doi.org/10.1021/nl048456s
  5. S. Karim., M. E. Toimil-Molares, F. Maurer, G. Miehe, W. Ensinger, J. Liu, T. W. Cornelius, and R. Neumann, Appl. Phys., A84, 403 (2006).
  6. C. N. R. Rao, S. R. C. Vivekchand, K. Biswas, and A. Govindaraj, Dalton Trans., R. S. C., 34, 3728 (2007).
  7. H. F. Yan, Y. J. Xing, Q. L. Hang, D. P. Yu, Y. P. Wang, J. Xu, Z. H. Xi, and S. Q. Feng, Chem. Phys. Lett., 323, 224 (2000). https://doi.org/10.1016/S0009-2614(00)00519-4
  8. E. K. Lee, B. L. Choi, Y. D. Park, Y. K. Sun, Y. Kwon, and H. J. Kim, Nanotechnology, 19, 185701 (2008). https://doi.org/10.1088/0957-4484/19/18/185701
  9. D. P. Yu, Y. J. Xing, Q. L. Hang, H. F. Yan, J. Xu, Z. H. Xi, and S. Q. Feng, Physica, E9, 305 (2001).
  10. J. H. Lee, M. A. Carpenter, and R. E. Geer, J. Mater. Res., 26, 2232 (2011). https://doi.org/10.1557/jmr.2011.119