• Title/Summary/Keyword: automotive semiconductor

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Implementation of FlexRay Protocol Specification and its Application to a Automobile Advance Alarm System (FlexRay 프로토콜 설계 및 자동차 경보 시스템 응용)

  • Xu, Yi-Nan;Yang, Sang-Hoon;Chung, Jin-Gyun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.45 no.8
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    • pp.98-105
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    • 2008
  • FlexRay is a high-speed communications protocol with high flexibility and reliability. It was devised by automotive manufacturers and semiconductor vendors and implemented as on vehicle LAN protocol using x-by-wire systems. FlexRay provides a high speed serial communication, time triggered bus and fault tolerant communication between electronic devices for automotive applications. In this paper, we first design the FlexRay communication controller, bus guardian protocol specification and function parts using SDL (Specification and Description Language). Then, the system is re-designed using Verilog HDL based on the SDL source. The FlexRay system was synthesized using Samsung $0.35{\mu}m$ technology. It is shown that the designed system can operate in the frequency range above 76 MHz. In addition, to show the validity of the designed FlexRay system, the FlexRay system is combined with automobile advance alarm system in vehicle applications. The FlexRay system is implemented using ALTERA Excalibur ARM EPXA4F672C3. It is shown that the implemented system operates successfully.

Analysis of Social Relations Among Organizational Units Derived from Process Models and Redesign of Organization Structure (프로세스 모델에서 도출한 조직간 사회관계에 대한 분석과 조직 재설계)

  • Choi, Injun;Song, Minseok;Kim, Kwangmyeong;Lee, Yong-Hyuk
    • Journal of Korean Institute of Industrial Engineers
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    • v.33 no.1
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    • pp.11-25
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    • 2007
  • Despite surging interests in analyzing business processes, there are few scientific approaches to analysis and redesign of organizational structures which can greatly affect the performance of business processes. This paper presents a method for deriving and analyzing organizational relations from process models using social network analysis techniques. Process models contain information on who performs which processes and activities, along with the assignment of organizational units such as departments and roles to related activities. To derive social relations between organizational units from process models, three types of metrics are formally defined: transfer of work metrics, subcontracting metrics, and cooperation metrics. By applying these metrics, various relations among organizational units can be derived and analyzed. To verify the proposed method and metrics, they are applied to standard process models of the semiconductor and electronic, and automotive industry in Korea. This paper presents a taxonomy for diagnosing organization structure based on the presented approach. The paper also discusses how to combine analyses in the taxonomy for redesign of organizational structures.

A Study on Impact Damage Behavior of CF/Epoxy Composite Laminates (CF/Epoxy적층판의 충격손상거동에 관한 연구)

  • Im, Gwang-Hui;Sim, Jae-Gi;Yang, In-Yeong
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.26 no.5
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    • pp.835-842
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    • 2002
  • In this paper, static and fatigue bending strengths and failure mechanisms of CFRP (carbon fiber reinforced plastics) laminates having impact damages have been evaluated. Composite laminates used for this experiment are CF/EPOXY orthotropy laminated plates, which have two-interfaces $[0^0_ 4/90^0_4]_{ sym}$. A steel ball launched by the air gun collides against CFRP laminates to generate impact damages. The damage growth during bending fatigue test is observed by the scanning acoustic microscope (SAM) and also, the fracture surfaces were observed by using the SEM (scanning electron microscope). In the case of impacted-side compression, fracture is propagated from the transverse crack generated near impact point. On the other hand, fracture is developed toward the impact point from the edge of interface-B delamination in the case of impacted-side tension. Eventually, failure mechanisms have been confirmed based on the observed delamination areas and fracture surfaces.

An Analysis of Vacuum Plasma Phenomena in DBD(Dielectric Barrier Discharges) (DBD(Dielectric Barrier Discharges)에서 전공 플라즈마 발생에 대한 해석적 연구)

  • Shin, Myoung-Soo;Cha, Sung-Hoon;Kim, Jong-Bong;Kim, Jong-Ho;Kim, Seong-Young;Lee, Hye-Jin
    • Journal of the Korean Society for Precision Engineering
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    • v.26 no.3
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    • pp.122-128
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    • 2009
  • DBD(Dielectric Barrier Discharges) plasma is often used to clean the surface of semiconductor. The cleaning performance is affected mainly by plasma density and duration time. In this study, the plasma density is predicted by coupled simulation of flow, chemistry mixing and reaction, plasma, and electric field. 13.56 MHz of RF source is used to generate plasma. The effect of dielectric thickness, gap distance, and flow velocity on plasma density is investigated. It is shown that the plasma density increases as the dielectric thickness decreases and the gap distance increases.

Trends in Wide Band-gap Semiconductor Power Devices for Automotive, Power Conversion Modules and ETRI GaN Power Technology (자동차용 WBG 전력반도체 및 전력변환 모듈과 ETRI GaN 소자 기술)

  • Ko, S.C.;Chang, W.J.;Jung, D.Y.;Park, Y.R.;Jun, C.H.;Nam, E.S.
    • Electronics and Telecommunications Trends
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    • v.29 no.6
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    • pp.53-62
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    • 2014
  • 본고는 최근 화두가 되고 있는 에너지 절감을 위해 고효율, 친환경의 WBG(Wide Band-Gap) 화합물반도체인 SiC(Silicon Carbide), GaN(Gallium Nitride) 전력반도체 소자 및 전력변환 모듈의 기술동향과 ETRI에서 연구개발 진행 중인 GaN 전력반도체 관련 기술에 대해 기술한다. WBG 전력반도체는 기존의 실리콘 전력반도체와 비교하여 열 특성 향상, 고속 스위칭, 고전압/고전류 특성 및 스위칭 손실 최소화 등이 가능하고 이에 따른 시스템의 소형화 및 전력효율 향상 효과를 얻을 수 있다. 특히, GaN 전력반도체 소자는 시장이 가장 넓게 형성되어 있는 900V 이하에 적용이 가능하며, 앞으로 시장이 커질 것으로 예상되는 HEV(Hybrid Electric Vehicle)/EV(Electric Vehicle)의 친환경 자동차에도 활용될 것으로 기대되고 있다. 본고는 최근의 일본과 미국에서의 WBG 전력반도체에 대한 관심 및 투자 방향과 GaN 전력반도체 소자에 대한 해외 기업의 업계동향에 대해서도 함께 살펴본다. 이러한 WBG 전력반도체에 대한 해외 선진업체의 산업동향과 더불어 ETRI에서 연구개발 중인 GaN 전력반도체 기술현황에 대해 전력소자 설계 및 제조공정, 패키징, 전력모듈 설계 제작 기술을 포함하여 기술한다.

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A Study on analysis framework development for yield improvement in discrete manufacturing (이산 제조 공정에서의 수율 향상을 위한 분석 프레임워크의 개발에 관한 연구)

  • Song, Chi-Wook;Roh, Geum-Jong;Park, Dong-Jin
    • The Journal of Information Systems
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    • v.26 no.2
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    • pp.105-121
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    • 2017
  • Purpose It is a major goal to improve the product yields during production operations in the manufacturing industry. Therefore, factory is trying to keep the good quality materials and proper production resources, also find the proper condition of facilities and manufacturing environment for yields improvement. Design/methodology/approach We propose the hybrid framework to analyze to dataset extracted from MES. Those data is about the alarm information generated from equipment, both measurement and equipment process value from production and cycle/pitch time measured from production data these covered products during production. We adapt a data warehousing techniques for organizing dataset, a logistic regression for finding out the significant factors, and a association analysis for drawing the rules which affect the product yields. And then we validate the framework by applying the real data generated from the discrete process in secondary cell battery manufacturing. Findings This paper deals with challenges to apply the full potential of modeling and simulation within CPPS(Cyber-Physical Production System) and Smart Factory implementation. The framework is being applied in one of the most advanced and complex industrial sectors like semiconductor, display, and automotive industry.

An Integrated High Linearity CMOS Receiver Frontend for 24-GHz Applications

  • Rastegar, Habib;Ryu, Jee-Youl
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.5
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    • pp.595-604
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    • 2016
  • Utilizing a standard 130-nm CMOS process, a RF frontend is designed at 24 GHz for automotive collision avoidance radar application. Single IF direct conversion receiver (DCR) architecture is adopted to achieve high integration level and to alleviate the DCR problem. The proposed frontend is composed of a two-stage LNA and downconversion mixers. To save power consumption, and to enhance gain and linearity, stacked NMOS-PMOS $g_m$-boosting technique is employed in the design of LNA as the first stage. The switch transistors in the mixing stage are biased in subthreshold region to achieve low power consumption. The single balanced mixer is designed in PMOS transistors and is also realized based on the well-known folded architecture to increase voltage headroom. This frontend circuit features enhancement in gain, linearity, and power dissipation. The proposed circuit showed a maximum conversion gain of 19.6 dB and noise figure of 3 dB at the operation frequency. It also showed input and output return losses of less than -10 dB within bandwidth. Furthermore, the port-to-port isolation illustrated excellent characteristic between two ports. This frontend showed the third-order input intercept point (IIP3) of 3 dBm for the whole circuit with power dissipation of 6.5 mW from a 1.5 V supply.

Design Conformance Verification of Military FM Radio Set Automatic Test Equipment (군용 FM 무전기 세트 자동시험장비(ATE) 설계 적합성 검증)

  • Kim, Byung-Jun
    • The Journal of the Korea institute of electronic communication sciences
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    • v.15 no.3
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    • pp.389-396
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    • 2020
  • In order to obtain a good quality product, a proper verification of production/test facilities must be preceded before the quality conformity inspection of the product. Among the various production/test facilities, ATE is widely used in the civilian industry such as the automotive industry, aerospace industry, semiconductor industry today. In addition, ATE is actively used in the defense industry production and performance tests. This paper is the result of systematically verifying the Design Conformance of ATS which is ATE of military FM radio set using various methods. And It is expected to be a good reference at the present time when the design conformity verification procedure for ATE for military supplies is not documented.

Epilayer Optimization of NPN SiGe HBT with n+ Buried Layer Compatible With Fully Depleted SOI CMOS Technology

  • Misra, Prasanna Kumar;Qureshi, S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.3
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    • pp.274-283
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    • 2014
  • In this paper, the epi layer of npn SOI HBT with n+ buried layer has been studied through Sentaurus process and device simulator. The doping value of the deposited epi layer has been varied for the npn HBT to achieve improved $f_tBV_{CEO}$ product (397 GHzV). As the $BV_{CEO}$ value is higher for low value of epi layer doping, higher supply voltage can be used to increase the $f_t$ value of the HBT. At 1.8 V $V_{CE}$, the $f_tBV_{CEO}$ product of HBT is 465.5 GHzV. Further, the film thickness of the epi layer of the SOI HBT has been scaled for better performance (426.8 GHzV $f_tBV_{CEO}$ product at 1.2 V $V_{CE}$). The addition of this HBT module to fully depleted SOI CMOS technology would provide better solution for realizing wireless circuits and systems for 60 GHz short range communication and 77 GHz automotive radar applications. This SOI HBT together with SOI CMOS has potential for future high performance SOI BiCMOS technology.

A 77 GHz 3-Stage Low Noise Amplifier with Cascode Structure Utilizing Positive Feedback Network using 0.13 μm CMOS Process

  • Lee, Choong-Hee;Choi, Woo-Yeol;Kim, Ji-Hoon;Kwon, Young-Woo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.4
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    • pp.289-294
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    • 2008
  • A 77 GHz 3-stage low noise amplifier (LNA) employing one common source and two cascode stages is developed using $0.13{\mu}m$ CMOS process. To compensate for the low gain which is caused by lossy silicon substrate and parasitic element of CMOS transistor, positive feedback technique using parasitic inductance of bypass capacitor is adopted to cascode stages. The developed LNA shows gain of 7.2 dB, Sl1 of -16.5 dB and S22 of -19.8 dB at 77 GHz. The return loss bandwidth of LNA is 71.6 to 80.9 GHz (12%). The die size is as small as $0.7mm\times0.8mm$ by using bias line as inter-stage matching networks. This LNA shows possibility of 77 GHz automotive RADAR system using $0.13{\mu}m$ CMOS process, which has advantage in cost compared to sub-100 nm CMOS process.