• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.2
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• pp.1-6
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• 2008

A compact analytical model of the threshold voltage for long-channel Asymmetric Double-Gate(ADG) MOSFET is presented. In contrast to the previous models, channel doping and carrier quantization are taken into account. A more compact model is derived by utilizing the potential distribution linearity characteristic of silicon film at threshold. The accuracy of the model is verified by comparisons with numerical simulations for various silicon film thickness, channel doping concentration and oxide thickness.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.11 no.12
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• pp.5820-5834
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• 2017

This paper investigates the channel selection problem with dynamic users and the asymmetric interference relation in distributed opportunistic spectrum access systems. Since users transmitting data are based on their traffic demands, they dynamically compete for the channel occupation. Moreover, the heterogeneous interference range leads to asymmetric interference relation. The dynamic users and asymmetric interference relation bring about new challenges such as dynamic random systems and poor fairness. In this article, we will focus on maximizing the tradeoff between the achievable utility and access cost of each user, formulate the channel selection problem as a directional graphical game and prove it as an exact potential game presenting at least one pure Nash equilibrium point. We show that the best NE point maximizes both the personal and system utility, and employ the stochastic learning approach algorithm for achieving the best NE point. Simulation results show that the algorithm converges, presents near-optimal performance and good fairness, and the directional graphical model improves the systems throughput performance in different asymmetric level systems.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.6
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• pp.1422-1428
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• 2014

This paper has analyzed threshold voltage roll-off for bottom gate voltages of asymmetric double gate(DG) MOSFET. Since the asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates, the bottom gate voltage influences on threshold voltage. It is, therefore, investigated how the threshold voltage roll-off known as short channel effects is reduced with bottom gate voltage. In the pursuit of this purpose, off-current model is presented in the subthreshold region, and the threshold voltage roll-off is observed for channel length and thickness with a parameter of bottom gate voltage as threshold voltage is defined by top gate voltage that off-currnt is $10^{-7}A/{\mu}m$ per channel width. As a result to observe the threshold voltage roll-off for bottom gate voltage using this model, we know the bottom gate voltage greatly influences on threshold voltage roll-off voltages, especially in the region of short channel length and thickness.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.3
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• pp.1-6
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• 2011

Low-power logic gates, i.e. inverter, NAND, and NOR, are proposed employing only n-channel oxide thin film transistors (TFTs). The proposed circuits were designed to prevent the pull-up and pull-down switches from being turned on simultaneously by using asymmetric feed-through and bootstrapping, thereby exhibited same output voltage swing as the input signal and no static current. The inverter is composed of 5 TFTs and 2 capacitors. The NAND and the NOR gates consist of 10 TFTs and 4 capacitors respectively. The operations of the logic gates were confirmed successfully by SPICE simulation using oxide TFT model.

• Korea-Australia Rheology Journal
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• v.18 no.3
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• pp.161-167
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• 2006

This study presents results on the numerical simulation of Newtonian and non-Newtonian flow in a channel obstructed by an asymmetric array of obstacles for clarifying the descriptive ability of current non-Newtonian constitutive equations. Jones and Walters (1989) have performed the corresponding experiment that clearly demonstrates the characteristic difference among the flow patterns of the various liquids. In order to appropriately account for flow properties, the Navier-Stokes, the Carreau viscous and the Leonov equations are employed for Newtonian, shear thinning and extension hardening liquids, respectively. Making use of the tensor-logarithmic formulation of the Leonov model in the computational scheme, we have obtained stable solutions up to relatively high Deborah numbers. The peculiar characteristics of the non-Newtonian liquids such as shear thinning and extension hardening seem to be properly illustrated by the flow modeling. In our opinion, the results show the possibility of current constitutive modeling to appropriately describe non-Newtonian flow phenomena at least qualitatively, even though the model parameters specified for the current computation do not precisely represent material characteristics.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.4
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• pp.225-232
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• 2009

An analytical compact model for the asymmetric lightly doped Double Gate (DG) MOSFET is presented. The model is developed using the Lambert Function and a 2-dimensional (2-D) parabolic electrostatic potential approximation. Compact models of the net charge and channel current of the DG-MOSFET are derived in section 2. Results for the channel potential and current are compared with 2-D numerical data for a lightly doped DG MOSFET in section 3, showing very good agreement.

• Korean Journal of Organic Agriculture
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• v.26 no.4
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• pp.571-583
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• 2018

The purpose of this study is to explore the dynamic properties of causality and asymmetric price transmission in the distributional channel of the tomato market in Korea. Using the wholesale and retail price series of the tomato market, we obtain the following results. First, the price transmission mechanism reveals the causal relationship channeling from the wholesale price to the retail price. Second, we find an asymmetric price transmission from the analysis using the threshold partial adjustment model. The retail price responds strongly when the wholesale price increases. On the other hand, the retail price shows sluggish adjustment when the wholesale price decreases.

• Asia Marketing Journal
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• v.19 no.4
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• pp.37-59
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• 2018

This study investigates the effects of the distribution channel structure on quality decisions under duopoly competition. I considers a set-up in which two retailers compete on product quality and retail price. In the set-up, the integrated retailer has the power to determine the quality of its exclusive product, while the decentralized retailer does not. For the decentralized retailer, the supplier determines product quality. I find that asymmetric pairs of a decentralized channel by one retailer and an integrated channel by the other retailer can be a Nash equilibrium in a simultaneous-channel-choice model. The two retailers select different levels of quality, and this quality competition benefits retailers by softening price competition. In a sequential-channel-choice model, I find that the leader can obtain a first-mover advantage. From the perspective of the supplier, which can decide the distribution channel structure and level of quality, both suppliers choose the decentralized channel in equilibrium.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.1C
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• pp.45-49
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• 2004

An image enhancement method using modified anisotropic diffusion filter is proposed in this paper. It employs sensor noise estimation and scale space methods based on the minimum reliable scale. Then the anisotropic diffusion filter is modified by the calculated critical value function and local gradient. Through simulation, it is verified that the proposed algorithm has the capability of little or no noise amplification in homogenous region as well as superior edge enhancement.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.05a
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• pp.741-744
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• 2014

This paper has analyzed threshold voltage roll-off for bottom gate voltages of asymmetric double gate(DG) MOSFET. Since the asymmetric DGMOSFET is four terminal device to be able to separately bias for top and bottom gates, the bottom gate voltage influences on threshold voltage. It is, therefore, investigated how the threshold voltage roll-off known as short channel effects is reduced with bottom gate voltage. In the pursuit of this purpose, off-current model is presented in the subthreshold region, and the threshold voltage roll-off is observed for channel length and thickness with a parameter of bottom gate voltage as threshold voltage is defined by top gate voltage that off-currnt is $10^{-7}A/{\mu}m$ per channel width. As a result to observe the threshold voltage roll-off for bottom gate voltage using this model, we know the bottom gate voltage greatly influences on threshold voltage roll-off voltages, especially in the region of short channel length and thickness.