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http://dx.doi.org/10.5573/JSTS.2009.9.4.225

Symmetric and Asymmetric Double Gate MOSFET Modeling  

Abebe, H. (USC Viterbi School of Engineering, Information Sciences Institute, MOSIS service)
Cumberbatch, E. (Claremont Graduate University, School of Mathematical Sciences)
Morris, H. (Claremont Graduate University, School of Mathematical Sciences)
Tyree, V. (USC Viterbi School of Engineering, Information Sciences Institute, MOSIS service)
Numata, T. (Nagoya University, Department of Electrical and Computer Engineering)
Uno, S. (Nagoya University, Department of Electrical and Computer Engineering)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.9, no.4, 2009 , pp. 225-232 More about this Journal
Abstract
An analytical compact model for the asymmetric lightly doped Double Gate (DG) MOSFET is presented. The model is developed using the Lambert Function and a 2-dimensional (2-D) parabolic electrostatic potential approximation. Compact models of the net charge and channel current of the DG-MOSFET are derived in section 2. Results for the channel potential and current are compared with 2-D numerical data for a lightly doped DG MOSFET in section 3, showing very good agreement.
Keywords
Device modeling; compact model; DG-MOSFET; circuit simulation;
Citations & Related Records

Times Cited By SCOPUS : 3
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