• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.11-20
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• 1994

GaAs and AlGaAs epi-layers were grown on semi-insulating (100) GaAs substrate by molecular beam epitaxy (MBE) and their electrical and optical properties have been investigated by several measurements. In undoped GaAs, the p-type GaAs layers with the good surface morphology were obtained under the growth conditions of the substrate temperatures ranging from 570 to $585^{\circ}C$ and the $As_4$/Ga ratios from 17 to 22. In the samples with the growth rates of the ranges of $0.9~1.1 {\mu}m/h$, the impurity concentrations were in the ranges of $1.5{\times}10^{14}~5.6{\times}10^{14}cm^{-3}$ with the Hall mobilities of $590~410cm^2/V-s$. In the Si-doped GaAs, the n-type GaAs layers with low electro trap, only two hole deep levels were observed with uniform doping profiles (<1%). AlGaAs layers with good surface morphology and crystallinity were grown under an optimum condition of the substrate temperature, $600^{\circ}C $. 8 deep level defects were observed between 0.17~0.85eV in undoped AlGaAs layers.

• Korean Journal of Soil Science and Fertilizer
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• v.50 no.2
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• pp.115-126
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• 2017

There is an increasing concern over arsenic (As) contamination in rice. This study was conducted to develope a prediction model for As uptake by rice based on the physico-chemical properties of soil. Soil and brown rice samples were collected from 46 sites in paddy fields near three different areas of closed mines and industrial complexes. Total As concentration, soil pH, Al oxide, available phosphorus (avail-P), organic matter (OM) content, and clay content in the soil samples were determined. Also, 1.0 N HCl, 1.0 M $NH_4NO_3$, 0.01 M $Ca(NO_3)_2$, and Mehlich 3 extractable-As in the soils were measured as phytoavailable As concentration in soil. Total As concentration in brown rice samples was also determined. Relationships among As concentrations in brown rice, total As concentrations in soils, and selected soil properties were as follows: As concentration in brown rice was negatively correlated with soil pH value, where as it was positively correlated with Al oxide concentration, avail-P concentration, and OM content in soil. In addition, the concentration of As in brown rice was statistically correlated only with 1.0 N HCl-extractable As in soil. Also, using multiple stepwise regression analysis, a modelling equation was created to predict As concentration in brown rice as affected by selected soil properties including soil As concentration. Prediction of As uptake by rice was delineated by the model [As in brown rice = 0.352 + $0.00109^*$ HCl extractable As in soil + $0.00002^*$ Al oxide + $0.0097^*$ OM + $0.00061^*$ avail-P - $0.0332^*$ soil pH] ($R=0.714^{***}$). The concentrations of As in brown rice estimated by the modelling equation were statistically acceptable because normalized mean error (NME) and normalized root mean square error (NRMSE) values were -0.055 and 0.2229, respectively, when compared with measured As concentration in the plant.

• Journal of Korean Society of Environmental Engineers
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• v.30 no.6
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• pp.621-627
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• 2008

In this study, a technique of speciation and determination of the trace inorganic arsenic(As(III) and As(V)) in water sample using HPLC-DRC-ICP-MS has been developed. Isocratic mobile phase of 10 mM ammonium nitrate and 10 mM ammonium phosphate monobasic was used and methanol(5 v/v%) was used as flushing solvent. Selection of the best flow rate of reaction gas, O$_2$, and optimization of the parameters such as pH and flow rate of mobile phase, and injection volume of sample for the separation and detection of arsenic species were carried out. The oxygen flow rate of 0.5 mL/min, pH of 9.4 and flow rate of 1.5 mL/min of mobile phase, and injection volume of sample of 100 $\mu$L were found to be the best parameters for the speciation and determination of arsenic species. The analytical features of the method were detection limit 0.10 and 0.08 $\mu$g/L, precision(RSD) 4.3% and 3.6%, and recovery 95.2% and 96.4% for As(III) and As(V), respectively. Analysis time was 4 minutes per sample. Linear calibration graphs with r$^2$ = 0.998 were obtained for both As(III) and As(V). Speciation analysis of arsenic species in the raw water samples collected from the tributary streams to Han River and main stream of Paldnag were performed by the proposed method. The concentrations of As(III) ranged from 0.10 to 0.22 $\mu$g/L and As(V) concentrations ranged from 0.44 to 1.19 $\mu$g/L, and 93.5% of total arsenic was found to be As(V).

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.460-466
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• 1999

The deep level electron traps in AP-MOCVD GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures have been investigated by means of Deep Level Transient Spectroscopy DLTS). In terms of the experimental procedure, GaAs/undoped Al\ulcornerGa\ulcornerAs/n-type GaAs heterostructures were deposited on 2" undoped semi-insulating GaAs wafers by the AP-MOCVD method at $650^{\circ}C$ with TMGa, AsH3, TMAl, and SiH4 gases. The n-type GaAs conduction layers were doped with Si to the target concentration of about 2$\times$10\ulcornercm\ulcorner. The Al content was targeted to x=0.5 and the thicknesses of Al\ulcornerGa\ulcornerAs layers were targeted from 0 to 40 nm. In order to investigate the electrical characteristics, an array of Schottky diodes was built on the heterostructures by the lift-off process and Al thermal evaporation. Among the key results of this experiment, the deep level electron traps at 0.742~0.777 eV and 0.359~0.680 eV were observed in the heterostructures; however, only a 0.787 eV level was detected in n-type GaAs samples without the Al\ulcornerGa\ulcornerAs overlayer. It may be concluded that the 0.787 eV level is an EL2 level and that the 0.742~0.777 eV levels are related to EL2 and residual oxygen impurities which are usually found in MOCVD GaAs and Al\ulcornerGa\ulcornerAs materials grown at $630~660^{\circ}C$. The 0.359~0.680 eV levels may be due to the defects related with the al-O complex and residual Si impurities which are also usually known to exist in the MOCVD materials. Particularly, as the Si doping concentration in the n-type GaAs layer increased, the electron trap concentrations in the heterostructure materials and the magnitude of the C-V hysteresis in the Schottky diodes also increased, indicating that all are intimately related.ated.

• Environmental Analysis Health and Toxicology
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• v.25 no.4
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• pp.307-314
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• 2010

Objectives : Arsenic (As) is ubiquitously distributed in the environment and has been known as a human carcinogen. The main source of arsenic exposure in general population is an oral route through As-contaminated water and foods. This study was performed to estimate the daily intake of As from diet and associated factors in Korean adults. Methods : We investigated 590 adults, 249 males and 341 females, with age of 20 years and older, who had not been exposed to the As occupationally. Study subjects were interviewed for demographic characteristics, lifestyles and diets during the last 24 hours. The estimation of As intake daily was based on amount of food consumption and As concentration in each food by using database of As concentrations in 117 food species. Results : Daily As intake was estimated as $56.46\;{\mu}g$/day, $56.60\;{\mu}g$/day in male and $56.36\;{\mu}g$/day in female. As intake was not significant from sex, age group, smoking and alcoholic habits, while was by occupation with the most intake of As in fishery. The daily As intakes was positively correlated with the total food consumption, specifically related with fishes and shellfishes, seaweeds, oils, grains and flavors. About 75% of As intake from diet was contributed by seafoods, such as $32.07\;{\mu}g$/day from fishes & shellfishes and $10.05\;{\mu}g$/day from seaweeds. However, it is necessary to evaluate if the dietary As intake affects on the levels of As in the body. Conclusions : The amount of As intake daily in Korean adults was estimated as $56.46\;{\mu}g$/day, and is determined mainly by diet behavior. The seafoods, such as fishes & shellfishes and seaweeds, is major source of As exposure from diet in Korean.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.442-448
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• 2011

Self-assembled InAs/InAlGaAs quantum dots (QDs) grown on an InP (001) substrate have been investigated by using photoluminescence (PL) and time-resolved PL measurements. The single layer (QD1) and seven stacks (QD2) of InAs/InAlGaAs QDs grown by the conventional S-K growth mode were used. The PL peak at 10 K was 1,320 nm for both QD1 and QD2. As the temperature increases from 10 to 300 K, the PL peaks for QD1 and QD2 were red-shifted in the amount of 178 and 264 nm, respectively. For QD1, the PL decay increased with increasing emission wavelength from 1,216 to 1,320 nm, reaching a maximum decay time of 1.49 ns at 1,320 nm, and then decreased as the emission wavelength was increased further. However, the PL decay time for QD2 decreased continuously from 1.83 to 1.22 ns as the emission wavelength was increased from 1,130 to 1,600 nm, respectively. These PL and TRPL results for QD2 can be explained by the large variation in the QD size with stacking number caused by the phase separation of InAlGaAs.

• Korean Journal of Clinical Laboratory Science
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• v.51 no.2
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• pp.235-244
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• 2019

This study examined the neurotoxicity of aluminum sulfate (AS), an environmental pollutant, and the protective effect of Phrymaleptostachya var. asiatica HARA (PLVAH) extract on the neurotoxicity induced by AS in the cultured C6 glioma cells. For this study, the cell viability and antioxidative effects, such as electron donating (ED) activity, lipid peroxidation (LP) activity, and superoxide anion-radical (SAR) scavenging activity, were analyzed. AS decreased the cell viability significantly in a dose-dependent manner and the $XTT_{50}$ value was measured at $120.0{\mu}M$ of AS. The neurotoxicity of AS was determined to be mid-toxic by Borenfreund and Puerner's toxic criteria. In addition, the catalase (CAT), antioxidant enzyme remarkably increased the cell viability injured by AS-induced neurotoxicity in these cultures. Regarding the protective effect of the PLVAH extract on AS-induced neurotoxicity, PLVAH extract significantly increased the ED ability, and the inhibitory ability of the LP and SAR scavenging ability. These findings suggest that oxidative stress is involved in the cytotoxicity of AS, and the PLVAH extract effectively protected against AS-induced neurotoxicity by its antioxidative effects. Natural resources, such as the PLVAH extract may be a putative therapeutic agent for the treatment of the toxicity induced by heavy metallic compounds, such as AS correlated with the oxidative stress.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.209-215
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• 2006

We investigated the optical property and the electronic subband structure of InAs quantum dots in an InAsGa/GaAs well structure utilizing photoluminescence (PL), PL excitation (PLE) and near infrared transmission spectroscopy. From transmission and PLE spectra, we found three bound states in the InAs quantum dot and two bound states in InGaAs/GaAs quantum well, and correlated to the results of intersubband transitions observed in photocurrent spectrum.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.3
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• pp.141-145
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• 2018

Ni-InGaAs shows promise as a self-aligned S/D (source/drain) alloy for n-InGaAs MOSFETs (metal-oxide-semiconductor field-effect transistors). However, limited thermal stability and instability of the microstructural morphology of Ni-InGaAs could limit the device performance. The in situ deposition of a Pd interlayer beneath the Ni layer was proposed as a strategy to improve the thermal stability of Ni-InGaAs. The Ni-InGaAs alloy layer prepared with the Pd interlayer showed better surface roughness and thermal stability after furnace annealing at $570^{\circ}C$ for 30 min, while the Ni-InGaAs without the Pd interlayer showed degradation above $500^{\circ}C$. The Pd/Ni/TiN structure offers a promising route to thermally immune Ni-InGaAs with applications in future n-InGaAs MOSFET technologies.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.345-355
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• 2011

GaAs-based metamorphic high electron mobility transistors (MHEMTs) and InP-based high electron mobility transistors (HEMTs) have good microwave and millimeter-wave frequency performance with lower minimum noise figure. MHEMTs have some advantages, especially for cost, compared with InP-based ones. In this paper, InAlAs/InxGa1-xAs/GaAs MHEMTs are simulated for DC/RF small-signal analysis. The hydrodynamic simulation parameters are calibrated to a fabricated 0.1-${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ heterostructure on the GaAs substrate, and the simulations for RF small-signal characteristics are performed, compared with the measured data, and analyzed for the devices. In addition, the simulations for the DC/RF characteristics of the MHEMTs with different gate-recess structures are performed, compared and analyzed.