• Journal of Electrical Engineering and Technology
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• 제12권6호
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• pp.2353-2358
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• 2017

A femtosecond laser pre-annealing process based on indium zinc oxide (IZO) thin-film transistors (TFTs) is fabricated. We demonstrate a stable pre-annealing process to analyze surface structure change of thin films, and we maintain electrical stability and improve electrical performance. Furthermore, dynamic electrical characteristics of the IZO TFTs were investigated. Femtosecond laser pre-annealing process-based IZO TFTs exhibit a field-effect mobility of $3.75cm^2/Vs$, an $I_{on}/I_{off}$ ratio of $1.77{\times}10^5$, a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. And the IZO-based inverter shows a fast switching behavior response. From this study, IZO TFTs from using the femtosecond laser annealing technique were found to strongly affect the electrical performance and charge transport dynamics in electronic devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.725-728
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• 2001

We have fabricated thin films using the DC/RF magnetron sputtering of 74wt%Ni-l8wt%Cr-4wt%Al-4wt%Cu alloy target and studied the effect of the process parameters on the electrical properties for low TCR(Temperature Coefficient of Resistance) films. In sputtering process, pressure, power and substrate temperature, are varied as controllable parameter. The films are annealed to 400$^{\circ}C$ in air and nitrogen atmosphere. The sheet resistance, TCR of the films increases with increasing annealing temperature. It abruptly increased as annealing temperature increased over 300$^{\circ}C$ in air atmosphere. From XRD, it is found that these results are due to the existence of NiO on film surface formed by annealing. As a results of them, TCR can be controlled by variation of sputter process parameter and annealing of thin film.

• 열처리공학회지
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• 제35권4호
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• pp.211-219
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• 2022

It is known that superplastic materials with ultrafine grains have high elongation mainly due to grain boundary sliding. Therefore, in the present study we examined the influence of grain refinement, caused by a repetitive cold rolling and annealing process, on both superplastic elongation and superplastic deformation mechanism. The cold rolling and annealing process was repetitively applied up to 4 times using Fe-10Mn-3.5Si alloy. High-temperature tensile tests were conducted at 763 K with an initial strain rate of 1 × 10^-3 s^-1 using the specimens. The superplastic elongation increased with the number of the repetitive cold rolling and annealing process; in particular, the 4 cycled specimen exhibited the highest elongation of 372%. The primary deformation mechanism of all specimens was grain boundary sliding between recrystallized α-ferrite and reverted γ-austenite grains. The main reason for the increase in elongation with the number of the repetitive cold rolling and annealing process was the increase in fractions of fine recrystallized α-ferrite and reverted γ-austenite grains, which undergo grain boundary sliding.

• Transactions on Electrical and Electronic Materials
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• 제3권1호
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• pp.42-45
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• 2002

Properties of lead zirconate titanate ferroelectric thin films prepared by rapid thermal annealing/direct insertion thermal annealing were investigated. The remnant polarization (Pr), saturation polarization (Ps), and coercive force (Ec) of typical samples annealed by rapid thermal annealing (RTA) are about 13.7 $\mu$ C/cm$^2$, 27.1 $\mu$C/cm$^2$, and 55.6 kV/cm, respectively. The dielectric constant of the sample is about 786, the dielectric loss tangent is about 2.4% at 1 kHz. Furthermore, ferroelectric, conduction, and piezoelectric properties of the thin films annealed by RTA process and the direct insertion thermal annealing (DITA) process were compared. The influence of temperature in the dry process on the above properties was also investigated.

• 한국전기전자재료학회논문지
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• 제30권5호
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• pp.276-283
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• 2017

A polysilicon-based metal-semiconductor-metal (MSM) photodetector was fabricated by means of our new methods. Its photoresponse characteristics were analyzed to see if it could be applied to a sensor system. The processes on which this study focused were an alloy-annealing process to form metal-polysilicon contacts, a post-annealing process for better light absorption of as-deposited polysilicon, and a passivation process for lowering defect density in polysilicon. When the alloy annealing was achieved at about $400^{\circ}C$, metal-polysilicon Schottky contacts sustained a stable potential barrier, decreasing the dark current. For better surface morphology of polysilicon, rapid thermal annealing (RTA) or furnace annealing at around $900^{\circ}C$ was suitable as a post-annealing process, because it supplied polysilicon layers with a smoother surface and a proper grain size for photon absorption. For the passivation of defects in polysilicon, hydrogen-ion implantation was chosen, because it is easy to implant hydrogen into the polysilicon. MSM photodetectors based on the suggested processes showed a higher sensitivity for photocurrent detection and a stable Schottky contact barrier to lower the dark current and are therefore applicable to sensor systems.

• 열처리공학회지
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• 제13권5호
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• pp.303-308
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• 2000

The ring gears of automobile parts are manufactured generally process chart of which is as follows : forging ${\rightarrow}$ annealing or normalizing ${\rightarrow}$ rough machining ${\rightarrow}$ hardening(Quenching-Tempering or carburizing process) ${\rightarrow}$ finish machining. Isothermal annealing process after forging is most effective in the side of improvment of machinability. On this study we selected two kinds of steel;SCM415, SCM435 of most universal and investigated microstructures to find out most suitable condition of heat treatment in proportion continuous cooling and isothermal annealing. As the cooling rate is $5^{\circ}C$ per minute in continuous cooling process, martensite and bainite are coexisted with ferrite and pearlite in SCM435 steel. If the cooling rate is slower than $5^{\circ}C$ per minute, microstructure were only ferrite and pearlite but formation of band structure can't be avoid. On the other hand, microstructure is only ferrite and pearlite regardless of cooling rate because carbon content of SCM415 steel is low. Moreover formation of band structure isn't exposed by faster cooling rate. Most optimal temperature of the isothermal annealing is from $650^{\circ}C$ to $680^{\circ}C$ in SCM435 steel. When holding time is 60 minute with $650^{\circ}C$, the identical ferrite and pearlite microstructures can be obtained.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1996년도 추계학술대회 논문집
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• pp.560-564
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• 1996

In recently, annealing process of cold rolled sheet tend to change to continuous annealing process for improving qualify, saving yield. In the meantime as demand for various kind and small lot of products has been increasing, batch annealing has been appreciated for its small restriction for the operation. So, we tested on the effect for a hydrogen contents of atmospheric gas at annealing furnace. As a result of several investigation. We confirmed for the following characteristics ; improved productivity, uniform heating, improved surface quality, saving energy. Therefore, the use of hydrogen instead of nitrogen as the protective gas, combined with high convection in batch annealing furnaces, has shown that considerable increases in furnace output and material quality are attainable. Owing to the low density, high diffusion and reducing character of hydrogen, a better transfer resulting in uniform material temperatures and improved coil surfaces can be achieved.

• 한국전기전자재료학회논문지
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• 제11권4호
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• pp.327-333
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• 1998

The influence of slow cooling and annealing time in $O_2$in MPEG process on $J_c$ was investigated. From the measurement of $J_c$,SEM and XRD, it was observed that the critical current density was related with the slow cooling time and annealing time in $O_2$. The value of $J_c$ was the highest at slow cooling time of 40 hour. And also, the value of $J_c$ along the annealing time in $O_2$in the case of the slow cooling time of 40 hours was inclined to increase with annealing time. Consequently, it can be suggested that proper slow cooling time and annealing time after slow cooling in MPMG process be important to improve the critical characteristics.

• 한국표면공학회지
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• 제33권2호
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• pp.101-106
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• 2000

SOI (Silicon-On-Insulator) substrates were fabricated with varying annealing temperature of $25-660^{\circ}C$ by a linear annealing method, which was modified RTA process using a linear shape heat source. The annealing method was applied to Si ∥ $SiO_2$/Si pair pre-contacted at room temperature after wet cleaning process. The bonding strength of SOI substrates was measured by two methods of Razor-blade crack opening and direct tensile test. The fractured surfaces after direct tensile test were also investigated by the optical microscope as well as $\alpha$-STEP gauge. The interface bonding energy was 1140mJ/m$^2$ at the annealing temperature of $430^{\circ}C$. The fracture strength was about 21MPa at the temperature of $430^{\circ}C$. These mechanical properties were not reported with the conventional furnace annealing or rapid thermal annealing method at the temperature below $500^{\circ}C$. Our results imply that the bonded wafer pair could endure CMP (Chemo-Mechanical Polishing) or Lapping process without debonding, fracture or dopant redistribution.

• Transactions on Electrical and Electronic Materials
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• 제9권4호
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• pp.137-142
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• 2008

The parasitic resistance is studied to silicon/metal contact junction for improving device performance and to lower contact/serial resistance silicide in natural sequence. In this paper constructs the stepwise Ni silicide process for parasitic resistance reduction for silicon/metal contact junction. We have investigated multi-step Ni silicide on SiGe substrate with stepwise annealing method as an alternative to compose more thermally reliable Ni silicide layer. Stepwise annealing for silicide formation is exposed to heating environment with $5^{\circ}C/sec$ for 10 seconds and a dwelling for both 10 and 30 seconds, and ramping-up and the dwelling was repeated until the final annealing temperature of $700\;^{\circ}C$ is achieved. Finally a direct comparison for single step and stepwise annealing process is obtained for 20 nm nickel silicide through stepwise annealing is $5.64\;{\Omega}/square$ at $600\;^{\circ}C$, and it is 42 % lower than that of as nickel sputtered. The proposed stepwise annealing for Ni silicidation can provide the least amount of NiSi at the interface of nickel silicide and silicon, and it provides lower resistance, higher thermal-stability, and superior morphology than other thermal treatment.