Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of Dry Process on Dielectric Properties of PZT Thin Films Prepared by Sol-Gel Process

  • Bae, Min-Ho (Department of Electrical Engineering, Chungbuk National University) ;
  • Lim, Kee-Joe (Department of Electrical Engineering, Chungbuk National University) ;
  • Kim, Hyun-Hoo (Department of Electronics Engineering, Doowon Collage) ;
  • No, Kwang-soo (Department of Ceramic Science and Engineering, KAIST)
  • Published : 2002.03.01
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Abstract

Properties of lead zirconate titanate ferroelectric thin films prepared by rapid thermal annealing/direct insertion thermal annealing were investigated. The remnant polarization (Pr), saturation polarization (Ps), and coercive force (Ec) of typical samples annealed by rapid thermal annealing (RTA) are about 13.7 $\mu$ C/cm$^2$, 27.1 $\mu$C/cm$^2$, and 55.6 kV/cm, respectively. The dielectric constant of the sample is about 786, the dielectric loss tangent is about 2.4% at 1 kHz. Furthermore, ferroelectric, conduction, and piezoelectric properties of the thin films annealed by RTA process and the direct insertion thermal annealing (DITA) process were compared. The influence of temperature in the dry process on the above properties was also investigated.

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References

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