• Journal of the Korean Institute of Telematics and Electronics
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• v.23 no.6
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• pp.795-800
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• 1986

High value sheet resistance (Rs, 350\ulcorner/ -80K\ulcorner/) born implanted polysilicon resistors were fabricated under process conditions compatible with bipolar integrated circuits fabrications. This paper includes studies of sensitivity of Rs to doping concentration, the effect of thermal annealing temperature on Rs, temperature coefficient of resistance (TCR), the effect of polysilicon thickness on Rs and the Rs variation within a run and between runs.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.80-83
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• 2000

In this work we deposited Pentacene thin film by OMBD at the various substrate temperatures, deposition rate and the various annealing temperatures for the fabrication of organic TFT and investigated the electrical and film surface characteristics such as sheet resistance, contact resistance and conductance Film thickness were measured by $\alpha$-step and the sheet resistance, contact resistance and conductance were extracted from the relation between the distance of the contacts and the resistance. During the film deposition the substrate temperature was held at 3$0^{\circ}C$, 4$0^{\circ}C$, 5$0^{\circ}C$, 6$0^{\circ}C$, 8$0^{\circ}C$ and 10$0^{\circ}C$, respectively. After the film deposition, Au contact was deposited by thermal evaporation. For the effect of annealing, the thin film was annealed in the nitrogen environment at 10$0^{\circ}C$ and 14$0^{\circ}C$ for 10 seconds, respectively. Film surface characteristics at the vatious substrate temperatures were measured by AFM. The crystallization of thin film was improved as the substrate temperatures were increased and the maximum gram size was 4${\mu}{\textrm}{m}$. The conductivity of thin film was found to be 7.40 $\times$10$^{-7}$ ~ 7.78$\times$10$^{-6}$ S/cm and the minimum contact resistance was 2.5324 ㏁.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.606-610
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• 2010

Films consisting of a silicon quantum dot superlattice were fabricated by alternating deposition of silicon rich silicon nitride and $Si_3N_4$ layers using an rf magnetron co-sputtering system. In order to use the silicon quantum dot super lattice structure for third generation multi junction solar cell applications, it is important to control the dot size. Moreover, silicon quantum dots have to be in a regularly spaced array in the dielectric matrix material for in order to allow for effective carrier transport. In this study, therefore, we fabricated silicon quantum dot superlattice films under various conditions and investigated crystallization behavior of the silicon quantum dot super lattice structure. Fourier transform infrared spectroscopy (FTIR) spectra showed an increased intensity of the $840\;cm^{-1}$ peak with increasing annealing temperature due to the increase in the number of Si-N bonds. A more conspicuous characteristic of this process is the increased intensity of the $1100\;cm^{-1}$ peak. This peak was attributed to annealing induced reordering in the films that led to increased Si-$N_4$ bonding. X-ray photoelectron spectroscopy (XPS) analysis showed that peak position was shifted to higher bonding energy as silicon 2p bonding energy changed. This transition is related to the formation of silicon quantum dots. Transmission electron microscopy (TEM) and electron spin resonance (ESR) analysis also confirmed the formation of silicon quantum dots. This study revealed that post annealing at $1100^{\circ}C$ for at least one hour is necessary to precipitate the silicon quantum dots in the $SiN_x$ matrix.

• Tunnel and Underground Space
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• v.15 no.4 s.57
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• pp.275-287
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• 2005

At the planning and design stages of a development of underground space or tunneling project, the information regarding ground conditions is very important to enhance economical efficiency and overall safety In general, the information can be expressed using RMR or Q-system and with the geophysical exploration image. RMR or Q-system can provide direct information of rock mass in a local scale for the design scheme. Oppositely, the image of geophysical exploration can provide an exthaustive but indirect information. These two types of the information have inherent uncertainties from various sources and are given in different scales and with their own physical meanings. Recently, RMR has been estimated in unsampled areas based on given data using geostatistical methods like Kriging and conditional simulation. In this study, simulated annealing(SA) is applied to overcome the shortcomings of Kriging methods or conditional simulations just using a primary variable. Using this technique, RMR and the image of geophysical exploration can be integrated to construct the spatial distribution of RM and to evaluate its uncertainty. The SA method was applied to solve an optimization problem with constraints. We have suggested the practical procedure of the SA technique for the uncertainty evaluation of RMR and also demonstrated this technique through an application, where it was used to identify the spatial distribution of RMR and quantify the uncertainty. For a geotechnical application, the objective functions of SA are defined using statistical models of RMR and the correlations between RMR and the reference image. The applicability and validity of this application are examined and then the result of uncertainty evaluation can be used to optimize the tunnel layout.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.570-576
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• 2002

Application of the aged Inconel 718 in hydrogen environment is seriously restraint by its high hydrogen embrittlement (HE) sensitivity. m previous researches, we have suggested the possibility and applicability of the laser surface annealing (LSA) process in improving the HE resistance of this alloy. Sequentially, a study on the effects of the precipitates in the Inconel 718 on its HE sensitivity was conducted in this research. Firstly, flat bar specimens were heat-treated to obtain various kinds of precipitation microstructures concerning the ${\gamma}$" phase and the 6 phase. Hydrogen was charged into the specimen by a cathodic charging process. The loss in reduction of area (RA) caused by hydrogen charging was used to assess the HE sensitivity. The HE sensitivity of the alloy was lowered with decreasing the volume fraction of ${\gamma}$". Moreover, it was possible to increase the HE resistance of the aged alloy by dissolving the $\delta$ phase, keeping the strength at the same level as that of the common aged alloy. Thus, we concluded that both the $\delta$ phase and the ${\gamma}$" phase affected the HE sensitivity of Inconel 718. Next, two kinds of notch tensile specimens were fabricated, one kind having $\delta$ phase and the other having no $\delta$ phase. All these specimens were aged via the same aging heat treatment process. The LSA process annealed a thin layer of the notch bottom of each specimen. One specimen of each kind was charged with hydrogen by the cathodic hydrogen charging process. Loss in the notch tensile strength (NTS) caused by hydrogen was used to evaluate the HE sensitivity. It was found that while the HE sensitivity of conventionally aged Inconel 718 was decreased by the LSA process, the HE sensitivity of the $\delta$-free aged Inconel 718 could further be decreased. Therefore, for applications in hydrogen environments, it is possible to fabricate alloys with both good HE resistance and high strength by controlling the precipitation conditions, and to improve HE resistance further via applying the LSA process.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.1
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• pp.75-81
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• 2017

The effects of KOH pretreatment and annealing conditions on the interfacial adhesion and the reliability between epoxy resin and polyimide substrate in the flexible printed circuit board were quantitatively evaluated using $180^{\circ}$ peel test. The initial peel strength of the polyimide without the KOH treatment was 29.4 g/mm and decreased to 10.5 g/mm after 100hrs at $85^{\circ}C/85%$ R.H. temperature/humidity treatment. In case of the polyimide with annealing after KOH treatment, initial peel strength was 29.6 g/mm and then maintained around 27.5 g/mm after $85^{\circ}C/85%$ R.H. temperature/humidity treatment. Systematic X-ray photoelectron spectroscopy analysis results showed that the peel strength after optimum annealing after KOH treatment was maintained high not only due to effective recovery of the polyimide damage by the polyimide surface treatment process, but also effective removal of metallic ions and impurities during various wet process.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.7-12
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• 2018

The effects of Ru deposition temperature and post-annealing conditions on the interfacial adhesion energies of atomic layer deposited (ALD) Ru diffusion barrier layer and Cu thin films for the advanced Cu interconnects applications were systematically investigated. The initial interfacial adhesion energies were 8.55, 9.37, $8.96J/m^2$ for the sample deposited at 225, 270, and $310^{\circ}C$, respectively, which are closely related to the similar microstructures and resistivities of Ru films for ALD Ru deposition temperature variations. And the interfacial adhesion energies showed the relatively stable high values over $7.59J/m^2$ until 250h during post-annealing at $200^{\circ}C$, while dramatically decreased to $1.40J/m^2$ after 500 h. The X-ray photoelectron spectroscopy Cu 2p peak separation analysis showed that there exists good correlation between the interfacial adhesion energy and the interfacial CuO formation. Therefore, ALD Ru seems to be a promising diffusion barrier candidate with reliable interfacial reliability for advanced Cu interconnects.

• Journal of the Korean Magnetics Society
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• v.10 no.4
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• pp.165-170
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• 2000

The purpose of this study is to investigate the effect of annealing conditions on physical and magnetic properties of Fe-Hf-N thin films. When the thin films were annealed in $N_2$ gas, a surface oxide layer, comprised of Fe$_2$O$_3$ and Fe$_3$O$_4$, was formed at the surface of the thin films and a Fe-Hf-O-N layer was also formed under this surface oxide layer. It was found that the thicknesses of the surface oxide layer and the Fe-Hf-O-N layer increased, as the annealing temperature increased. It was also found that if the thickness of the surface oxide layer was excluded in the property calculation, the soft magnetic properties of the annealed thin films were not much different from those of the as-deposited thin films. Therefore, it was suggested that the Fe-Hf-O-N layer formed under the surface oxide layer did not lose significantly the soft magnetic properties of the Fe-Hf-N films and the Fe-Hf-N films annealed in $N_2$gas showed the soft magnetic properties of the Fe-Hf-N and Fe-Hf-O-N multi-layers.

• Composites Research
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• v.32 no.5
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• pp.229-236
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• 2019

In this study, the effects of the additional processing parameters on the mechanical properties of thermoplastic composites fabricated with automated fiber placement (AFP) were evaluated. Annealing and vacuum bag only processes were then performed on the manufactured thermoplastic composites, respectively. For verification, the crystallinity was measured by differential scanning calorimetry (DSC), confirming the variation of semi-crystalline thermoplastic composite according to the process conditions. The void content of thermoplastic composites was evaluated by matrix digestion method while microscopic examination confirmed the porosity distribution. The interlaminar shear strength test was conducted for three different process parameters (VBO, annealing, and no treatment). A comparison of the three tested strengths was made, revealing that the porosity value had larger effect on the mechanical properties of the thermoplastic composite compared to the degree of crystallinity. Additionally, when thermoplastic composite melted up, the pores were continuously removed under vacuum process; the removal of the pores resulted in an increase of the interlaminar shear strength.

• Korean Journal of Metals and Materials
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• v.49 no.2
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• pp.180-186
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• 2011

Isothermal annealing and electromigration tests were performed at $125^{\circ}C$ and $125^{\circ}C$, $3.6{\times}10_4A/cm^2$ conditions, respectively, in order to compare the growth kinetics of the intermetallic compound (IMC) in the Cu/thin Sn/Cu bump. $Cu_6Sn_5$ and $Cu_3Sn$ formed at the Cu/thin Sn/Cu interfaces where most of the Sn phase transformed into the $Cu_6Sn_5$ phase. Only a few regions of Sn were not consumed and trapped between the transformed regions. The limited supply of Sn atoms and the continued proliferation of Cu atoms enhanced the formation of the $Cu_3Sn$ phase at the Cu pillar/$Cu_6Sn_5$ interface. The IMC thickness increased linearly with the square root of annealing time, and increased linearly with the current stressing time, which means that the current stressing accelerated the interfacial reaction. Abrupt changes in the IMC growth velocities at a specific testing time were closely related to the phase transition from $Cu_6Sn_5$ to $Cu_3Sn$ phases after complete consumption of the remaining Sn phase due to the limited amount of the Sn phase in the Cu/thin Sn/Cu bump, which implies that the relative thickness ratios of Cu and Sn significantly affect Cu-Sn IMC growth kinetics.