• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.261-263
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• 2002

CMOS devices have scaled down to sub-50nm gate to achieve high performance and high integration density. Key challenges with the device scaling are non-scalable threshold voltage( $V^{th}$ ), high electric field, parasitic source/drain resistance, and $V^{th}$ variation by random dopant distribution. To solve scale-down problem of conventional structure, a new structure was proposed. In this paper, we have investigated double-gate MOSFET structure, which has the main-gate and the side-gates, to solve these problem.

• Journal of Sensor Science and Technology
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• v.31 no.1
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• pp.12-15
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• 2022

In this study, we studied the effects of transfer gate on the photocurrent characteristics of gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector. The GBT MOSFET-type photodetector has high sensitivity owing to the amplifying characteristic of the photocurrent generated by light. The transfer gate controls the flow of photocurrent by controlling the barrier to holes, thereby varying the sensitivity of the photodetector. The presented GBT MOSFET-type photodetector using a built-in transfer gate was designed and fabricated via a 0.18-㎛ standard complementary metal-oxide-semiconductor (CMOS) process. Using a laser diode, the photocurrent was measured according to the wavelength of the incident light by adjusting the voltage of the transfer gate. Variable sensitivity of the presented GBT MOSFET-type photodetector was experimentally confirmed by adjusting the transfer gate voltage in the range of 405 nm to 980 nm.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.498-501
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• 2002

In this paper, we designed double gate(DG) MOSFET structure which has main gate(MG) and two side gates(SG). We have simulated using TCAD simulator. DG MOSFET have the main gate length of nm and the side gate length of 70nm. Then, we have investigated the pinch-off characteristics, drain voltage is changed from 0V to 1.5V at VMG=1.5V and VSG=3.0V. In spite of the LMG is very small, we have obtained a very good pinch-off characteristics. Therefore, we know that the DG structure is very useful at nino scale.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2002.04a
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• pp.515-520
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• 2002

This paper begin a new approach in the water-gate controller using radio communication. The dissertation is on the controllable device development of water-gate in the remote distance from water-gate trough the transceiver by radio communication. The proposed water-gate control device is simple in structure, an suitable for implementation of water-gate control in the remote distance. The remote controller water-gate device inspected the up and down motion of water-gate through the LCD displayer, so that it was very safety driving about the surroundings information, over loading and position of water-gate, and so on.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.612-615
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• 2002

This paper begin a new approach in the water-gate control using radio communication. The dissertation is on the controllable device development of water-gate in the remote distance from water-gate trough the transceiver by radio communication. The proposed water-gate control device is simpe in structure, an suitable for implementation of water-gate control in the remote distance. The remote controller water-gate device inspected the up and down motion of water-gate through the LCD displayer, so that it was very safety driving about the surroundings imformation, over loading and position of water-gate, and so on.

• Journal of IKEEE
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• v.25 no.2
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• pp.381-387
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• 2021

As Head-Mounted Displays(HMDs), which are mainly used to maximize realism in games and videos, have experienced increased demand and expanded scope of use in education and training, there is growing interest in methods to enhance the performance of conventional HMDs. In this study, a methodology to utilize Carbon NanoTubes(CNTs) to improve the performance of gate drivers that send control signals to each pixel circuit of the HMD is discussed. This paper proposes a new circuit design method that replaces the transistors constituting the buffer part of the conventional gate driver with transistors incorporating CNTs and compare the performance of the suggested gate drive with that of a gate driver comprising only conventional transistors via simulations. According to the simulation results, by including CNTs in the gate driver, the output voltage can be increased by approximately 0.3V compared to the conventional gate driver high voltage(1.1V) at a speed of 12.5 GHz and the gate width also can be reduced by up to 20 times.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.63-66
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• 2017

This research was about shielded trench gate power MOSFET for low voltage and high speed. We used T-CAD tool and carried out process and device simulation for exracting design and process parameters. The exracted parameters was used to design shieled and conventional trench gate power MOSFET. And The electrical characteristics of shieled and conventional trench gate power MOSFET were compared and analyzed for their power device applications. As a result of analyzing electrical characteristics, the recorded breakdown voltages of both devices were around 120 V. The electric distributions of shielded and conventional trench gate power MOSFET was different. But due to the low voltage level, the breakdown voltage was almost same. And the other hand, the threshold voltage characteristics of shielded trench gate power MOSFET was superior to convention trench gate power MOSFET. In terms of on resistance characteristics, we obtained optimal oxied thickness of $3{\mu}m$.

• Journal of Soil and Groundwater Environment
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• v.28 no.3
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• pp.1-11
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• 2023

Permeable reactive barrier (PRB) is a prominent in-situ remedial option for cleanup of contaminated groundwater and has been gaining increasing popularity in recent years. Funnel-and-gate systems, comprised of two side wings of impermeable walls and a central gate wall, are frequently implemented in many sites, but often suffers from bypassing of groundwater due to the progressive clogging of the gate wall over extended period of time. This study investigated technical feasibility of a hybrid funnel-and-gate system designed to address the flow deterioration in the gate wall. The key attribute of the proposed hybrid system is the operation of drainage units at the barrier walls and rear end of the gate wall. A conceptual modeling with MODFLOW indicated the groundwater inside the barrier was maintained at appropriate level to be guided toward the gate wall, yielding constant discharging of groundwater from the gate.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.31-35
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• 2020

This study demonstrates metal-oxide based memtransistor device and the gate tunable memristive characteristic using atomic layer deposition (ALD) and ZnO n-type oxide semiconductor. We fabricated a memtransistor device having channel width 70 ㎛, channel length 5 ㎛, back gate, using 40 nm thick ZnO thin film, and measured gate-tunable memristive characteristics at each gate voltage (50V, 30V, 10V, 0V, -10V, -30V, -50V) under humidity of 40%, 50%, 60%, and 70% respectively, in order to investigate the relation between a memristive characteristic and hydrogen doping effect on the ZnO memtransistor device. The electron mobility and gate controllability of memtransistor device decreased with an increase of humidity due to increased electron carrier concentration by hydrogen doping effect. The gate-tunable memristive characteristic was observed under humidity of 60% 70%. Resistive switching ratio increased with an increase of humidity while it loses gate controllability. Consequently, we could obtain both gate controllability and the large resistive switching ratio under humidity of 60%.

• Journal of Electrical Engineering and Technology
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• v.1 no.2
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• pp.237-240
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• 2006

The feasibility of a midgap metal gate is investigated for a 32 nm MOSFET for low power applications. The midgap metal gate MOSFET is found to deliver $I_{on}$ as high as a bandedge gate if a proper retrograde channel is used. An adequate design of the retrograde channel is essential to achieve the performance requirement given in the ITRS roadmap. A process simulation is also run to evaluate the feasibility of the necessary retrograde profile in manufacturing environments. Based on the simulated result, it is found that any subsequent thermal process should be tightly controlled to retain transistor performance, which is achieved using the retrograde doping profile. Also, the bandedge gate MOSFET is determined be more vulnerable to the subsequent thermal processes than the midgap gate MOSFET. A guideline for gate workfunction $(\Phi_m)$ is suggested for the 32 nm MOSFET.