• Title/Summary/Keyword: and gate

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Estimation for Changing of Hydraulic States Caused by Gate Expansion in Asan Bay (아산만 배수갑문 확장사업에 따른 아산만 해역의 수리특성 변화 검토)

  • Park, Byong-Jun;Song, Hyun-Ku;Song, Tae-Kwan;Jang, Eun-Chul
    • 한국전산유체공학회:학술대회논문집
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    • 2008.03b
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    • pp.337-340
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    • 2008
  • The gate expansion was planed to increase discharge capacity of gate structure at sea dike in Asan Bay. So it was estimated for changing of hydraulic states in Pyeongteak Harbor Zone caused by gate expansion, by 2D and 3D CFD Module. In result, influence of gate expansion was less than tidal current and discharge ratio between old gate and new gate was 4:6.

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A Study on the Optimal Design of the Gate Leaf of a Dam (DAM 수문의 최적설계에 관한 사찰)

  • 최상훈;한응교;양인홍
    • Journal of Ocean Engineering and Technology
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    • v.5 no.1
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    • pp.64-70
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    • 1991
  • The design theory of roller gate has been systematized laying more emphasis on practical formulas than theoretical ones and the design procedure of the existing gate facilites is reviewed and analyaed on economical viewpoint and safety factor. The design theory of timoshenko, the thechnical standards for hydraulic gate and penstock of Japan, and the design standards for waterworks structures of Germany are applied to the study of optimal design of a gate leaf. In this study, gate leaf which is now being operated for water control at the seadike, estuary dam and reservoir dam are adopted as a mode, and a new design method by the computer is proposed through the variation of design elements within practical ranges. As a result, safety factor and economical design can be made by using T-beams to the horizontal and vertical beam of the gate leaf instead of H-beams used in the existing seadike roller gate at Asan, and total weight of gate leaf is reduced by the present optimization.

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A study on efficient gate system based RFID at the container terminal

  • Kim, Hyun;Kim, Yul-Seong
    • Journal of Navigation and Port Research
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    • v.30 no.4
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    • pp.277-283
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    • 2006
  • It is a world trend to construct large terminal and develop automated container terminal to attract Super Post-Panamax and provide service which is based on differentiation. In fact, there is insufficient research for automatization of terminal gate since the automatization of current constructed container terminal is only focused on increasing productivity and unmanned system through the automatization of quay, yard, etc. In this paper, we have investigated advantage/disadvantage of existing gate operation systems and compared each gate operation system in the aspect of raising terminal image and the productivity. For the specific study, we have used data from actual terminal gate operation and RFID model business sponsored by MOMAF (Ministry of Maritime Affairs and Fisheries). As a result, this paper carried out an efficient gate operation system and it has been expected that it will be performed as groundwork of automated gate operation system which is for design of container terminal and improvement of gate operation system.

Device Design Guideline for Nano-scale SOI MOSFETs (나노 스케일 SOI MOSFET를 위한 소자설계 가이드라인)

  • Lee, Jae-Ki;Yu, Chong-Gun;Park, Jong-Tae
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.7
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    • pp.1-6
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    • 2002
  • For an optimum device design of nano-scale SOI devices, this paper describes the short channel effects of multi-gate structures SOI MOSFETs such as double gate, triple gate and quadruple gate, as well as a new proposed Pi gate using computer simulation. The simulation has been performed with different channel doping concentrations, channel widths, silicon film thickness, and vertical gate extension depths of Pi gate. From the simulation results, it is found that Pi gate devices have a large margin in determination of doping concentrations, channel widths and film thickness comparing to double and triple gate devices because Pi gate devices offer a better short channel effects.

Design of RF Receiver using Independent-Gate-Mode Double-Gate MOSFET (Independent-Gate-Mode Double-Gate MOSFET을 이용한 RF Receiver 설계)

  • Jeong, Na-Rae;Kim, Yu-Jin;Yun, Ji-Sook;Park, Sung-Min;Shin, Hyung-Soon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.10
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    • pp.16-24
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    • 2009
  • Independent-gate-mode double-gate(IGM-DG) MOSFET overcomes the limitation of 3-terminal device structure, and enables to operate with different voltages for front-gate and back-gate. Therefore, circuit designs becomes not only simple, but also area-efficient due to the controllability of the 4th terminal provided by IGM-DG MOSFETs. In this paper, an RF receiver utilizing IGM-DG MOSFETs is presented and also, the circuit performance is verified by the HSPICE simulations. Besides, the circuit analysis and optimization are performed for various IGM-DG characteristics.

Design of XOR Gate Based on QCA Universal Gate Using Rotated Cell (회전된 셀을 이용한 QCA 유니버셜 게이트 기반의 XOR 게이트 설계)

  • Lee, Jin-Seong;Jeon, Jun-Cheol
    • Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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    • v.7 no.3
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    • pp.301-310
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    • 2017
  • Quantum-dot cellular automata(QCA) is an alternative technology for implementing various computation, high performance, and low power consumption digital circuits at nano scale. In this paper, we propose a new universal gate in QCA. By using the universal gate, we propose a novel XOR gate which is reduced time/hardware complexity. The universal gate can be used to construct all other basic logic gates. Meanwhile, the proposed universal gate is designed by basic cells and a rotated cell. The rotated cell of the proposed universal gate is located at the central of 3-input majority gate structure. In this paper, we propose an XOR gate using three universal gates, although more than five 3-input majority gates are used to design an XOR gate using the 3-input majority gate. The proposed XOR gate is superior to the conventional XOR gate in terms of the total area and the consumed clock because the number of gates are reduced.

Effects of Offset Gate on Programing Characteristics of Triple Polysilicon Flash EEPROM Cell

  • Kim, Nam-Soo;Choe, Yeon-Wook;Kim, Yeong-Seuk
    • Journal of Electrical Engineering and information Science
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    • v.2 no.3
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    • pp.132-138
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    • 1997
  • Electrical characteristics of split-gate flash EEPROM with triple polysilicon is investigated in terms of effects of floating gate and offset gate. In order to search for t the effects of offset gate on programming characteristics, threshold voltage and drain current are studied with variation of control gate voltage. The programming process is believed to depend on vertical and horizontal electric field as well as offset gate length. The erase and program threshold voltage are found to be almost constant with variation of control gate voltage above 12V, while endurance test indicates degradation of program threshold voltage. With increase of offset gate length, program threshold voltage becomes smaller and the drain source voltage just after program under constant control gate voltage becomes higher.

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Flexural and Interfacial Bond Properties of Hybrid Steel/Glass Fiber Reinforced Polymer Composites Panel Gate with Steel Gate Surface Deformation for Improved Movable Weir (개량형 가동보에 적용하기 위한 하이브리드 강판/GFRP 패널 게이트의 강판게이트 표면형상에 따른 휨 및 계면 부착 특성 평가)

  • Kim, Ki Won;Kwon, Hyung Joong;Kim, Phil Sik;Park, Chan Gi
    • Journal of The Korean Society of Agricultural Engineers
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    • v.57 no.2
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    • pp.57-66
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    • 2015
  • The purpose of this study was to improved the durability of a improved movable weir by replacing the improved movable weir's metal gate with a hybrid steel/glass fiber reinforced polymer composites panel gate. Because the metal gate of a improved movable weir is always in contact with water, its service life is shortened by corrosion. This study made four type of hybrid steel/glass fiber reinforced polymer composites panel gate with different steel gate surface deformation (control, sand blast, scratch and hole), flexural. Fracture properties tests were performed depending on the steel gate surface deformation. According to the test results, the flexural behavior, flexural strength and fracture properties of hybrid steel/glass fiber reinforced polymer composites panel gate was affected by the steel panel gate surface deformation. Also, the sand blast type hybrid steel/glass fiber reinforced polymer composites panel gate shows vastly superior flexural and fracture performance compared to other types.

Arrangement Changes of the Inner Gate and Gate-pavilion in Temple Construction of Joseon (조선시대 사찰건축에서 정문(正門)과 문루(門樓)의 배치관계 변화)

  • Hong, Byeong-Hwa;Kim, Seong-Woo
    • Journal of architectural history
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    • v.18 no.1
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    • pp.51-65
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    • 2009
  • The inner gate(The last gate inside a temple, facing the main hall) is not a well-known part in the temple construction of Joseon. This study is focused on seeking truth about the inner gate arrangement of the existing temples as well as proving that it has changed while maintaining a certain relationship with the gate-pavilion arrangement. The inner gate is related to the Cheondo ritual which is letting the dead people's spirits go to heaven, mainly performed in Buddhism, and it has been demonstrated that the inner gate has gradually disappeared as the importance of gate-pavilions has been emphasized along with the changes of the ritual. The inner gate was a common construction before the 18th Century but since that time, it has gradually disappeared and finally it faced the main hall as the gate-pavilion and made the 4 halls-centered arrangement with the temple dormitories on both sides.

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Experimental fabrication and analysis on the double injection semiconductor switching devices (반도체 DI swiching 소자의 시작과 특성에 관한 실험적 고찰)

  • 성만영;정세진;임경문
    • Electrical & Electronic Materials
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    • v.4 no.2
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    • pp.159-174
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    • 1991
  • 이중주입효과에 의한 고내압 반도체 스위칭소자의 설계 제작에 촛점을 맞추어 Injection Gate구조와 MOS Gate 구조로 시료소자를 제작해 그 특성을 검토하고 Electrical Switching 및 Oxide막에서의 Breakdown현상에 의한 문제점을 해결해 보고자 Optical Gate구조를 제안하여 이 optically Gated Semiconductor Switching 소자의 동작특성을 연구하고 Injection Gate 구조를 제안하여 이 optically Gated Semiconductor Switching 소자의 동작특성을 연구하고 Injection Gate 및 MOS Gate 구조(Planar type, V-Groove type, Injection Gate mode, Optical Gate mode)로 설계제작된 소자와 특성을 비교 분석하였다.

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