Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Design of RF Receiver using Independent-Gate-Mode Double-Gate MOSFET

Independent-Gate-Mode Double-Gate MOSFET을 이용한 RF Receiver 설계

  • Jeong, Na-Rae (Department of Electronic Engineering, Ewha Womans University) ;
  • Kim, Yu-Jin (Department of Electronic Engineering, Ewha Womans University) ;
  • Yun, Ji-Sook (Department of Electronic Engineering, Ewha Womans University) ;
  • Park, Sung-Min (Department of Electronic Engineering, Ewha Womans University) ;
  • Shin, Hyung-Soon (Department of Electronic Engineering, Ewha Womans University)
  • 정나래 (이화여자대학교 전자공학과) ;
  • 김유진 (이화여자대학교 전자공학과) ;
  • 윤지숙 (이화여자대학교 전자공학과) ;
  • 박성민 (이화여자대학교 전자공학과) ;
  • 신형순 (이화여자대학교 전자공학과)
  • Received : 2009.08.10
  • Published : 2009.10.25
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Abstract

Independent-gate-mode double-gate(IGM-DG) MOSFET overcomes the limitation of 3-terminal device structure, and enables to operate with different voltages for front-gate and back-gate. Therefore, circuit designs becomes not only simple, but also area-efficient due to the controllability of the 4th terminal provided by IGM-DG MOSFETs. In this paper, an RF receiver utilizing IGM-DG MOSFETs is presented and also, the circuit performance is verified by the HSPICE simulations. Besides, the circuit analysis and optimization are performed for various IGM-DG characteristics.

Independent-Gate-Mode Double-Gate(IGM-DG) MOSFET는 기존의 DG-MOSFET의 3-terminal 소자구조가 갖고 있는 한계에서 벗어나 front-gate와 back-gate를 서로 다른 전압으로 구동하는 것이 가능하다. IGM-DG를 이용함으로써 4번째 단자의 자유도에 의해 회로설계가 간단해 질 뿐 아니라, 집적도를 향상시킬 수 있는 장점을 가진다. 본 논문에서는 IGM-DG MOSFET를 사용하여 RF 수신단을 설계하였고, HSPICE 시뮬레이션을 통해 회로성능을 검증하고 소자의 특성변화에 따른 최적의 회로설계 방향을 제시하였다.

Keywords

References

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