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Design of RF Receiver using Independent-Gate-Mode Double-Gate MOSFET  

Jeong, Na-Rae (Department of Electronic Engineering, Ewha Womans University)
Kim, Yu-Jin (Department of Electronic Engineering, Ewha Womans University)
Yun, Ji-Sook (Department of Electronic Engineering, Ewha Womans University)
Park, Sung-Min (Department of Electronic Engineering, Ewha Womans University)
Shin, Hyung-Soon (Department of Electronic Engineering, Ewha Womans University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.46, no.10, 2009 , pp. 16-24 More about this Journal
Abstract
Independent-gate-mode double-gate(IGM-DG) MOSFET overcomes the limitation of 3-terminal device structure, and enables to operate with different voltages for front-gate and back-gate. Therefore, circuit designs becomes not only simple, but also area-efficient due to the controllability of the 4th terminal provided by IGM-DG MOSFETs. In this paper, an RF receiver utilizing IGM-DG MOSFETs is presented and also, the circuit performance is verified by the HSPICE simulations. Besides, the circuit analysis and optimization are performed for various IGM-DG characteristics.
Keywords
IGM-DG MOSFET; Double-Gate; LNA; Mixer; Oscillator; RF Receiver;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
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