• Journal of the Korean Institute of Telematics and Electronics B
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• v.33B no.3
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• pp.88-95
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• 1996

Recently, the use of color data is growing fast in the area of image processing. To represent full resolution image on a limited output device, image has to be quantized an dithered. So, many dithering techniques are foundd in the printing. In this paper, we propose nonlinear quantization to consider the overlapping phenomena of neighboring printing dots and modified dot diffusion algorithm to compensate the color degradation produced in the quantization process. In the modified dot-diffusion quantization errors to be diffused are adjusted to improve both image blur and color change produced in the dot diffusion. The printed image obtained by the proposed color dithering method has higher visual quality an less color degradation than the images by conventional printing method.

• Journal of the Korean Society of Visualization
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• v.5 no.1
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• pp.12-15
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• 2007

Macromolecule diffusion in cells and tissues is important for cell signaling, metabolism and locomotion. Biophysical methods, including non-invasive or minimally invasive in-vivo photobleaching techniques and single quantum-dot tracking, have been used to measure the rates of macromolecule diffusion in living cells and tissues, including central nervous system and tumors. Mathematical modeling and statistical analysis of experimental data revealed various modes of diffusion, which are strongly coupled with spatiotemporal changes in nanoscale structures and material properties.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.569-574
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• 1999

New methods for both color palette design and dithering based on human visual system (HVS) characteristics are proposed. Color quantization for palette design uses the relative visual sensitivity and spatial masking effect of HVS. The dithering operation for printing uses nonlinear quantization, which considers the overlapping phenomena among neighbor printing dots, and then a modified dot-diffusion algorithm is followed to compensate the degradation produced in the quantization process. The proposed techniques can produce high quality image in the low-bit color devices.

• Journal of Korea Multimedia Society
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• v.12 no.3
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• pp.362-371
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• 2009

The key technology for developing high quality LCDs is about manufacturing BLUs with homogeneous dot distributions. Commonly, homogeneous dot distributions are obtained by the halftoning methods which convert a gray-scale image to a binary image. Among many halftoning algorithms, the error-diffusion technique based on the principle distance is known to show homogeneous dot distributions. However, this technique has a drawback; the extent of the principle distance at each pixel with respect to those of the neighboring pixels can be too small or big creating a gap or overlap. In this paper, we propose a new error diffusion algorithm based on the variable principle distance which improves the existing error diffusion technique based on the principle distance. The variable principle distance at a given pixel is calculated with gray-scale values of the pixel and its neighbors and thus the principle distance value is variable depending on the direction from that pixel. This variable principle distance technique helps BLUs obtain homogeneous dot distributions.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.33 no.1
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• pp.53-59
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• 2009

The objectives of this paper are to study the characteristics of heat transfer and pressure drop of the micro channel heat exchangers using diffusion bonding technology. Four types of heat exchangers are designed and manufactured, which are straight type, long dot type, splited wavy type and straight double side type. Heat transfer and pressure drop performance of each heat exchangers are measured in various operating conditions, and compared each other. The results show that the $(j/f)^{1/3}$ performance of splited wavy type and long dot type increases about 10.3% and 6.1% at the Reynolds number 470 compared to that of straight type, respectively. On the other hand, $(j/f)^{1/3}$ performance of straight double side type decreases 19.7%.

• Proceedings of the KSME Conference
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• 2008.11b
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• pp.2304-2309
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• 2008

The objectives of this paper are to study the characteristics of heat transfer and pressure drop of the micro channel heat exchangers using diffusion bonding technology. Four types of heat exchangers are designed and manufactured, which are straight type, long dot type, splited wavy type and straight double side type. Heat transfer and pressure drop performance of each heat exchangers are measured in various operating conditions, and compared each other. The results show that the $(j/f)^{1/3}$ performance of splited wavy type and long dot type increases about 10.3% and 6.1% at the Reynolds number 470 compared to that of straight type, respectively. On the other hand, $(j/f)^{1/3}$ performance of straight double side type decreases 19.7%.

• Journal of the Optical Society of Korea
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• v.19 no.3
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• pp.272-276
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• 2015

The PbS quantum dot is an emerging photovoltaic material, which may provide high efficiency breakthroughs. The most crucial element for the high efficiency solar cells's development is to understand charge transport characteristics of PbS quantum dot solids, which are also important in planning strategic research. We have investigated charge transport characteristics of PbS quantum dot solids thin films using space charge limited conduction analysis and assessed thickness dependent photovoltaic performances. The extracted carrier drift mobility was $low-10^{-2}cm^2/Vs$ with the estimated diffusion length about 50 nm. These and recently reported values were compared with those from a commercial photovoltaic material, and we present an essential element in further development of PbS quantum dot solids materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.232-232
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• 2012

The doping of semiconducting elements is essential for the development of silicon quantum dot (QD) solar cells. Especially the doping elements should be activated by substitution at the crystalline sites in the crystalline silicon QDs. However, no analysis technique has been developed for the analysis of the activated dopants in silicon QDs in $SiO_2$ matrix. Secondary ion mass spectrometry (SIMS) is a powerful technique for the in-depth analysis of solid materials and the impurities analysis of boron and phosphorus in semiconductor materials. For the study of diffusion behaviour of B and P by SIMS, Si/$SiO_2$ multilayer films doped by B or P were fabricated and annealed at high temperatures for the activated doping of B and P. The distributions of doping elements were analyzed by SIMS. Boron found to be preferentially distributed in Si layer rather than the $SiO_2$ layer. Especially the B in the Si layers was separated to two components of an interfacial component and a central one. The central component was understood as the activated elements. On the other hand, phosphorus did not show any preferred diffusion.

• Applied Science and Convergence Technology
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• v.25 no.6
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• pp.158-161
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• 2016

Debye temperature is an important thermodynamical factor in quantum dots (QDs); it can be used to determine the degree of homogeneity of a QD structure as well as to study the interdiffusion mechanism during growth. Direct estimation of the Debye temperature can be obtained using the Varshni relation. The Varshni relation is an empirical formula that can interpret the change of emission energy with temperature as a result of phonon interaction. On the other hand, phonons energy can be calculated using the Fan Expression. The Fan expression and Varshni relation are considered equivalent at a temperature higher than Debye temperature for InAs quantum dot. We investigated InAs quantum dot optically, the photoluminescence spectra and peak position dependency on temperature has been discussed. We applied a mathematical treatment using Fan expression, and the Varshni relation to obtain the Debye temperature and the phonon energy for InAs quantum dots sample. Debye temperature increase about double compared to bulk crystal. We concluded that the In/Ga interdiffusion during growth played a major role in altering the quantum dot thermodynamical parameters.

• Dementia and Neurocognitive Disorders
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• v.22 no.3
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• pp.114-116
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• 2023