Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2012.08a
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- Pages.232-232
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- 2012
Diffusion Behaviors of B and P at the Interfaces of Si/$SiO_2$ Multilayer System After the Annealing Process
- Jang, Jong-Shik (Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS)) ;
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Kang, Hee-Jae
(Department of Physics, Chungbuk National University (CBNU)) ;
- Hwang, Hyun-Hye (Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS)) ;
- Kim, Kyung-Joong (Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS))
- Published : 2012.08.20
Abstract
The doping of semiconducting elements is essential for the development of silicon quantum dot (QD) solar cells. Especially the doping elements should be activated by substitution at the crystalline sites in the crystalline silicon QDs. However, no analysis technique has been developed for the analysis of the activated dopants in silicon QDs in