• E2M - 전기 전자와 첨단 소재
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• 제9권4호
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• pp.372-378
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• 1996

The phtoreflectance(PR) spectra of B ion implanted semi-insulating(SI) GaAs were studied. Ion implantation was performed by 150keV implantation energy and 1*10/aup 12/-10$^{15}$ ions/c $m^{2}$ doses. Electronic band structure was damaged by ion implantation with above 1*10$^{13}$ ions/c $m^{2}$ dose. When samples were annealed, " peak was observed at 30-40meV below band gap( $E_{g}$). It should be noted that this energy is close to the ionization energies of S $i_{As}$ , and GeAs in G $a_{As}$ which are also found as impurities in LEC GaAs, it is therefore possible that this feature is related to S $i_{As}$ , or G $e_{As}$ and B ions by implanted defect associated with them. From PR spectra of etched samples which is as-implanted by 1*10$^{14}$ and 1*10$^{15}$ ions/c $m^{2}$ dose, the depth of destroyed electronic band structure was from surface to 0.2.mu.m below surface.nic band structure was from surface to 0.2.mu.m below surface.

• 전자공학회논문지SC
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• 제38권2호
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• pp.12-19
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• 2001

본 논문에서는 새로운 구조의 모듈라 시스템의 최적구조 설계 알고리즘을 제안하였다. 모듈라 시스템은 구조의 단순화와 시간 주파수 분석법을 이용하기 위해 웨이블렛 신경망으로 구성하였다. 제안한 최적구조 설계 알고리즘을 이용하여 근사화 대상함수의 시간-주파수 특성을 분석하여 모듈의 개수와 부-시스템의 노드의 개수를 결정할 수 있다. 제안한 최적 구조 설계 알고리즘은 시스템의 특성을 분석하여 모듈라 웨이블렛 신경망의 최적구조를 설계할 수 있는 방법론을 제공할 수 있다. 제안한 새로운 구조와 최적 구조 설계 알고리즘을 근사화 문제에 적용하여 우수성을 검증하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.609-611
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• 1995

In this study, we experimented the properties of SOG film as sacrificials layers in surface micromachining and made $SiO_2$ films through spin, bake, cure process. When we culled SOG films once, SOG film thickness is 1000 $\sim$ 3000 ${\AA}$. Then we coaled 200-${\AA}$ SOG film on 9000 ${\AA}$-CVD oxide and then we fabricated test structure, cantilever and ring/beam structure. We estimated deformed structure by SEM. As the results, The deformation of the structure layer in the SOG-coated sacrificial layers is small compared with that or the structure layer on CVD oxide or PSG. In the future, we use multi coated SOG films, SOG film become adequate material as sacrificial layer.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 G
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• pp.2856-2858
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• 1999

In this paper, the FPNN(Fuzzy Polynomial Neural Networks) algorithm with multi-layer fuzzy inference structure is proposed for the model identification of a complex nonlinear system. The FPNN structure is generated from the mutual combination of PNN (Polynomial Neural Network) structure and fuzzy inference method. The PNN extended from the GMDH(Group Method of Data Handling) uses several types of polynomials such as linear, quadratic and modifled quadratic besides the biquadratic polynomial used in the GMDH. In the fuzzy inference method, simplified and regression polynomial inference method which is based on the consequence of fuzzy rule expressed with a polynomial such as linear, quadratic and modified quadratic equation are used Each node of the FPNN is defined as a fuzzy rule and its structure is a kind of fuzzy-neural networks. Gas furnace data used to evaluate the performance of our proposed model.

• 센서학회지
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• 제23권2호
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• pp.105-109
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• 2014

Structure and electrical properties of $0.85NaNbO_3-0.15LiNbO_3$ ($(Li_{0.15}Na_{0.85})NbO_3$) ceramics were investigated as a function of sintering temperature. $(Li_{0.15}Na_{0.85})NbO_3$ ceramics were prepared by conventional solid state processing. A main phase of the orthorhombic perovskite structure and secondary phase of $LiNbO_3$ were confirmed for all sintered specimens. Dense $(Li_{0.15}Na_{0.85})NbO_3$ ceramics were obtained at sintering temperature above $1050^{\circ}C$. With increasing sintering temperature, the electromechanical coupling factor ($k_p$), piezoelectric constant ($d_{33}$) and relative dielectric constant (${\varepsilon}_r$) of the sintered specimens increased, while the mechanical quality factor ($Q_m$) decreased. These results are due to the increase of grain size and crystallite size of orthorhombic perovskite structure. Based on the temperature dependence of ${\varepsilon}_r$, stable piezoelectric properties were expected because no phase transition found up to $300^{\circ}C$. Typically, kp of 18%, $d_{33}$ of 34.7 pC/N, ${\varepsilon}_r$ of 135, and $Q_m$ of 62.8 were obtained for the specimens sintered at $1200^{\circ}C$ for 5 h.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.232-234
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• 1996

We have investigated the effect of molecular structure of polymer of rubbed polyimide (PI) films for surface liquid crystal alignment. To obtain surface alignment effect of Polymer molecular structure, we measured the polar (out of plane-tilt) anchoring strength and surface ordering of 5CB on rubbed PI surfaces. We have found that the polar anchoring strength of 5CB is depend on the polymer molecular structure of these unidirectionally rubbed PI surfaces.

• Current Optics and Photonics
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• 제4권6호
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• pp.558-565
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• 2020

A wavelength-independent optical sensor based on an asymmetric Mach-Zehnder interferometer (AMZI) is proposed. The optical sensor based on an AMZI is very sensitive to wavelength, and wavelength drift will lead to measurement error. The optical sensor is compensated to reduce its dependence on wavelength. The insensitivity of the optical sensor to wavelength mainly depends on the compensation structure, which is composed of an AMZI cascaded with another AMZI and can compensate the wavelength drift. The influence of wavelength drift on the optical sensor can be counteracted by carefully designing the size parameters of the compensation structure. When the wavelength changes from 1549.9 nm to 1550.1 nm, the error after compensation can be lower than 0.066%. Furthermore, the effect of fabrication tolerance on compensation results is analyzed. The proposed compensation method can also be used to compensate the drift of other parameters such as temperature, and can be applied to the compensation of other interference-based optical devices.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.651-652
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• 2006

In this paper, 4-way data path 128 point pipelined FFT processor with 4-way structure is proposed. The proposed FFT processor has 4-way structure in order to meet data requirement of MB-OFDM system at 132MHz operating frequency. The FFT processor is based on R4MDC and extended to suit 4-way data path. The FFT processor is designed by Verilog HDL and the gate count is about 88k.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 D
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• pp.2633-2635
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• 2003

In this study, we propose a fuzzy polynomial neural networks (FPNN) and a genetically optimized fuzzy polynomial neural networks(GoFPNN) for identification of non-linear system. GoFPNN architecture is designed by a FPNN based on fuzzy set and its structure and parameters are optimized by genetic algorithms. A fuzzy neural networks(FNN) based on fuzzy set divide into two structures that is simplified inference structure and linear inference structure. The proposed FPNN is resulted from integration and extension of simplified and linear inference structure of FNN. The consequence structure of the FPNN consist of polynomials represented by networks using connection weights for rules. The networks comprehend simplified(Type 0), linear (Type 1), and quadratic(Type 3) inferences. The proposed FPNN can select polynomial type of consequence part for each rule. Therefore, proposed scheme can offer flexible structure design capability for a system characteristics. Moreover, GAs is applied to networks structure and parameters tuning of proposed FPNN, and its efficient application method is discussed, these subjects are result in GoFPNN that is optimal FPNN. To evaluate proposed model performance, a numerical experiment is carried out.

• Bulletin of the Korean Chemical Society
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• 제24권3호
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• pp.325-333
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• 2003

An analysis of the electronic structure and bonding in the ternary silicide YNiSi₃is made, using extended Huckel tight-binding calculations. The YNiSi₃structure consists of Ni-capped Si₂dimer layers and Si zigzag chains. Significant bonding interactions are present between the silicon atoms in the structure. The oxidation state formalism of $(Y^{3+})(Ni^0)(Si^3)^{3-}$ for YNiSi₃constitutes a good starting point to describe its electronic structure. Si atoms receive electrons from the most electropositive Y in YNiSi₃, and Ni 3d and Si 3p states dominate below the Fermi level. There is an interesting electron balance between the two Si and Ni sublattices. Since the ${\pi}^*$ orbitals in the Si chain and the Ni d and s block levels are almost completely occupied, the charge balance for YNiSi₃can be rewritten as $(Y^{3+})(Ni^{2-})(Si^{2-})(Si-Si)^+$, making the Si₂layers oxidized. These results suggest that the Si zigzag chain contains single bonds and the Si₂double layer possesses single bonds within a dimer with a partial double bond character. Strong Si-Si and Ni-Si bonding interactions are important for giving stability to the structure, while essentially no metal-metal bonding exists at all. The 2D metallic behavior of this compound is due to the Si-Si interaction leading to dispersion of the several Si₂π bands crossing the Fermi level in the plane perpendicular to the crystallographic b axis.