• 제목/요약/키워드: analytical simulator

검색결과 80건 처리시간 0.025초

DOMAIN DECOMPOSITION ALGORITHM AND ANALYTICAL SIMULATION OF COUPLED FLOW IN RESERVOIR / WELL SYSTEM

  • EWING, RICHARD;IBRAGIMOV, AKIF;LAZAROV, RAYCHO
    • Journal of the Korean Society for Industrial and Applied Mathematics
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    • 제5권2호
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    • pp.71-99
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    • 2001
  • The model and analytical method for solving the problem of coupled fluid flow in the reservoir/well system is presented. The 3-D drainage area is composed of three connected media: the tubing, the annuli as a super conducting collector, and the reservoir itself. To couple these three types of fluid flows a non-overlapping Dirichlet-Neumann domain decomposition method is developed. The method allows us to apply an analytical hybrid simulator for accurate evaluation of the impact of main geometrical and hydrodynamic parameters of the 3-D system on the pressure drop along the horizontal well and its production index.

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소형탈선시뮬레이터를 이용한 1/5 축소대차의 주행안정성 시험 (A Running Stability Test of 1/5 Scaled Bogie using Small-Scaled Derailment Simulator)

  • 엄범규;강부병;이희성
    • 한국철도학회논문집
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    • 제15권1호
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    • pp.9-16
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    • 2012
  • 철도차량의 탈선은 발생 시 대형사고로 이어질 수 있어, 철도차량의 주행안전 확보 문제는 철도운영기관 및 시설기관의 주요 현안 사항이다. 현재 대차의 동적 안정성 특성 시험은 대차 주행시험대라는 시험설비를 이용하여 시험을 하고 있다. 그러나 실물을 대상으로 한 실물규모의 주행시험대상에서의 동특성 시험은 시험 준비와 관련된 시험비용 및 시험소요 시간의 증가, 다양한 시험조건 설정 측면에서 어려움이 있다. 이러한 단점을 극복하고자 시험 편의성 측면에서 축소형 주행시험대를 활용하고 있으나 국내에서는 아직까지 축소대차, 축소트랙 등의 기초적인 수준의 연구가 진행되고 있다. 본 연구에서는 철도차량의 동적 거동을 예측하는 방법으로서 소형탈선시뮬레이터를 이용하여 상사기법이 적용된 1/5 축소대차의 주행안정성 시험에 대한 연구를 수행하였다. 또한, 시험데이터와 해석데이터를 비교·검증하기 위하여 상용해석프로그램을 이용하여 해석모델을 구현하고, 이를 이용하여 도향상에 따른 1/5 축소대차의 동적특성을 확인하였다.

6 자유도 자전거 시뮬레이터의 운동 장치 제어력을 이용한 운전자의 작용력 추정 (Estimation of Rider's Action Force from Measurement of Motion Platform Control Force in the 6 DOF Bicycle Simulator)

  • 신재철;이종원
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2002년도 춘계학술대회논문집
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    • pp.842-847
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    • 2002
  • One of the challenging problems with bicycle simulators is to deal with the inherent unstable bicycle dynamics that is coupled with rider's motion. For the bicycle dynamics calculation and the real time simulation, it is necessary to identify the control inputs from the rider as well as the virtual environments. The six control forces of the Stewart platform-based motion system are used for estimation of the rider's action force, which is one of the important control inputs, but of which the direct measurement is impractical. For the effective estimation of the rider's action force, the dynamics model of the motion system is derived incorporated with both analytical and experimental methods and the sliding mode controller with perturbation estimation is developed.

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전력계통 시뮬레이터의 기술현황과 국내개발의 방법론 고찰 (A Study on the Power System Simulator Technologies for the Domestic Development)

  • 김정훈;이봉용;심건보;신중린;이흥재;권태원;윤용범;이철휴
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1993년도 하계학술대회 논문집 A
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    • pp.529-533
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    • 1993
  • Recently, the analysis of power systems is transfering from analytical techniques to simulation because it is difficult to analyze accurately the phenomena occured in complicated and huge power systems. Digital computers are used popularly to analyze the phenomena of power systems. But real-time simulators were used due to the limitation of digital computer - real time analysis, non-linearity and so on - and rapid development of digital technologies. In this paper, we discuss the advanced foreign power system simulators and the conceptual designs for the KEPCO power system simulator have been drawn for the domestic development.

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보강링에 의하여 예압된 냉간단조금형구조의 탄성유한요소 해석 (Elastic Finite Element Analysis of the Cold Forging Dies Prestressed by Shrinkage Rings)

  • 서대윤;이민철;전만수
    • 소성∙가공
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    • 제7권4호
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    • pp.347-353
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    • 1998
  • A new approach of elastic finite element to die stress analysis in forging is presented in this paper. The die set analysis problem is formulated by considering contact problems under both mechanical and thermal loads. In the approach, amount of shrink fit is controlled by thermal load i.e., temperature difference between die insert and shrink fits. The loading conditions are extracted automatically from a forging simulator. The predicted solution is compared with analytical one and it has been shown that the predicted results are in excellent agreement with the analytical ones. An application example is given, which was found in a cold forging company.

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Development of MATLAB-based Signal Performance Analysis Software for New RNSS Signal Design

  • Han, Kahee;Won, Jong-Hoon
    • Journal of Positioning, Navigation, and Timing
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    • 제8권4호
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    • pp.139-152
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    • 2019
  • The design of new navigation signals is a key factor in building new satellite navigation systems and/or modernizing existing legacy systems. Navigation signal design involves selecting candidate groups and evaluating and analyzing their signal performances. This process can be easily performed through software simulation especially at the beginning of the development phase. The analytical signal performance analysis software introduced in this study is implemented based on equations between the signal design parameters of Radio Navigation Satellite Service (RNSS) and the navigation signal figures-of-merit (FoMs). Therefore, this study briefly summarizes the RNSS signal design parameters and FoMs before introducing the developed software. After that, we explain the operating sequence of the implemented software including the Graphical User Interface (GUI), and calculate the FoMs of an example scenario to verify the feasibility of the software operations.

반도체 공정 시뮬레이터 개발에 관한 연구 (Development of VLSI Process Simulator)

  • 이경일;공성원;윤상호;이제희;원태영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1994년도 추계학술대회 논문집
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    • pp.40-45
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    • 1994
  • The TCAD(Technology Computer Aided Design) software tool is a popular name to be able to simulate the semiconductor process and device circuit. We have developed a two-dimensional TCAD software tool included an editor, parser, each process unit, and 2D, 3D graphic routine that is Integrated Environment. The initial grid for numerical analysis is automatically generated with the geometric series that use the user default(given) line and position separated with grid interval and the nodes corresponding to each mesh point stoic the all the possible attribute. Also, we made a data structure called PIF for input or output. Methods of ion implantation in this paper arc Monte Carlo, Gaussian Pearson and Dual-Pearson. Analytical model such as Gaussian, Pearson and Dual-Pearson were considered the multilayer structure and two-dimensional tilted implantation. We simuttaneously calculated the continuity equation of impurity and point defect in diffusion simulation. Oxidation process was simulated by analytical ERFC(Complementary Error Function) model for local oxidation.

A Subthreshold Swing Model for Symmetric Double-Gate (DG) MOSFETs with Vertical Gaussian Doping

  • Tiwari, Pramod Kumar;Jit, S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제10권2호
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    • pp.107-117
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    • 2010
  • An analytical subthreshold swing model is presented for symmetric double-gate (DG) MOSFETs with Gaussian doping profile in vertical direction. The model is based on the effective conduction path effect (ECPE) concept of uniformly doped symmetric DG MOSFETs. The effect of channel doping on the subthreshold swing characteristics for non-uniformly doped device has been investigated. The model also includes the effect of various device parameters on the subthreshold swing characteristics of DG MOSFETs. The proposed model has been validated by comparing the analytical results with numerical simulation data obtained by using the commercially available $ATLAS^{TM}$ device simulator. The model is believed to provide a better physical insight and understanding of DG MOSFET devices operating in the subthreshold regime.

IGBT의 콜렉터 구조에 따른 홀 주입효율의 변화 (Variations of the hole injection efficiency with IGBT's collector structure)

  • 최병성;정상구
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 D
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    • pp.1956-1958
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    • 1999
  • The analysis of hole injection efficiency at the p+/n-drift layer junction in non-punchthrough IGBT structure is presented. This analysis takes into account carrier concentration variations by conductivity modulation. Good agreement between this analysis and simulation is found over a wide range of carrier lifetime and current density. The proposed analytical model of the hole injection efficiency as a function of collector width, collector concentration has been verified by device simulator, ATLAS.

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Subthreshold Current Model of FinFET Using Three Dimensional Poisson's Equation

  • Jung, Hak-Kee
    • Journal of information and communication convergence engineering
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    • 제7권1호
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    • pp.57-61
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    • 2009
  • This paper has presented the subthreshold current model of FinFET using the potential variation in the doped channel based on the analytical solution of three dimensional Poisson's equation. The model has been verified by the comparison with the data from 3D numerical device simulator. The variation of subthreshold current with front and back gate bias has been studied. The variation of subthreshold swing and threshold voltage with front and back gate bias has been investigated.