• Applied Science and Convergence Technology
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• v.24 no.3
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• pp.60-66
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• 2015

The modified amorphous GeTe formed by pulsed laser irradiation in as-grown GeTe has been analyzed in terms of variations of local bonding structure using extended x-ray absorption fine structure (EXAFS). The modified GeTe film has octahedral-like Ge-Te bonding structure that can be effectively induced by irradiation process. The EXAFS data clearly shows that the irradiation can lead to reduction of the average coordination number. Variations in the transition temperature for the irradiated film during crystallization can be described by the presence of octahedral-like local structure.

• Korean Journal of Materials Research
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• v.27 no.5
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• pp.242-247
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• 2017

ZnO film was prepared on a p-type Si wafer and then annealed at various temperatures in air and vacuum conditions to research the electrical properties and bonding structures during the annealing processes. ZnO film annealed in atmosphere formed a crystal structure owing to the suppression of oxygen vacancies: however, ZnO annealed in vacuum had an amorphous structure after annealing because of the increment of the content of oxygen vacancies. Schottky contact was observed for the ZnO annealed in an air. O 1s spectra with amorphous structure was found to have a value of 529 eV; that with a crystal structure was found to have a value of 531.5 eV. However, it was observed in these results that the correlation between the electronic characteristics and the bonding structures was weak.

• Journal of Information Display
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• v.5 no.2
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• pp.1-5
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• 2004

We developed an a-Si TFT-LCD panel with integrated gate driver circuit using a standard 5-MASK process. To minimize the effect of the a-Si TFT current and LC's capacitance variation with temperature, we developed a new a-Si TFT circuit structure and minimized coupling capacitance by changing vertical architecture above gate driver circuit. Integration of gate driver circuit on glass substrate enables single chip and 3-side free panel structure in a-Si TFT-LCD of QVGA ($240{\times}320$) resolution. And using double ASG structure the dead space of TFT-LCD panel could be further decreased.

• Korean Journal of Materials Research
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• v.4 no.6
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• pp.620-625
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• 1994

We recently showed from the neutron diffraction and extended X-ray absorption fine structure studies the structural evidence for the formation of an amorphous phase in immiscible Cu-Ta system subjected to mechanical alloying. In a system with a positive heat of mixing like Cu-Ta, we consider it necessary to confirm the formation of an amorphous phase not only from the structural studies but also from a change in the electronic properties. We show the electronic evidence for the formation of the chemical bonding between the unlike atoms Cu and Ta for the 120 h-milling sample through changes in superconducting transition temperature and X-ray photoemission spectroscopy valence band structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.5
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• pp.282-285
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• 2014

We have investigated the structural and electrical properties of Si-Zn-Sn-O (SZTO) thin films deposited by RF magnetron sputtering at various deposition temperatures from RT to $350^{\circ}C$. All the SZTO thin fims are amorphous structure. The mobility of SZTO thin film has been changed depending on the deposition temperature. SZTO thin film transistor shows mobility of 8.715 $cm^2/Vs$ at room temperature. We performed the electrical stress test by applying gate and drain voltage. SZTO thin film transistor shows good stability deposited at room temperature while showing poor stability deposited at $350^{\circ}C$. As a result, the electrical performance and stability have been changed depending on deposition temperature mainly because high deposition temperature loosened the amorphous structure generating more oxygen vacancies.

• Macromolecular Research
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• v.15 no.2
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• pp.185-190
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• 2007

Poly(norbornene dimethyl dicarboxylate)s, (PNDMD)s, were prepared by addition polymerization with palladium(II) catalyst from pure exo-monomers, and their structure and properties were compared with those of poly(norbornene dicarboxylic acid dialkyl ester)s, (PNDADA)s. Both polymer series exhibited good solubility in general organic solvents and excellent thermal stability up to $330^{\circ}C$. Wide-angle X-ray scattering (WAXS) study indicated the presence of nano-scale layer-like order in amorphous PNDADAs, while PNDMDs showed random amorphous structure. The glass transition temperatures and dielectric constants of solid polymers were found to decrease as the alkyl side-chain length increases for both polymer series. However, PNDMDs showed lower glass transition temperatures and higher dielectric constants, as compared with those of PNDADAs containing the same alkyl substituents. This difference, caused by the higher side-group mobility of PNDMDs, may be closely related to the nano-scale order in amorphous PNDADAs and its absence in PNDMDs.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.225-228
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• 2017

In this study, zinc tin oxide (ZTO) films were prepared on indium tin oxide (ITO) glasses and annealed at different temperatures under vacuum to investigate the correlation between the Ohmic/Schottky contacts, electrical properties, and bonding structures with respect to the annealing temperatures. The ZTO film annealed at $150^{\circ}C$ exhibited an amorphous structure because of the electron-hole recombination effect, and the current of the ZTO film annealed at $150^{\circ}C$ was less than that of the other films because of the potential barrier effect at the Schottky contact. The drift current as charge carriers was similar to the leakage current in a transparent thin-film device, but the diffusion current related to the Schottky barrier leads to the decrease in the leakage current. The direction of the diffusion current was opposite to that of the drift current resulting in a two-fold enhancement of the cut-off effect of leakage drift current due to the diffusion current, and improved performance of the device with the Schottky barrier. Hence, the thin film with an amorphous structure easily becomes a Schottky contact.

• Journal of the Mineralogical Society of Korea
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• v.25 no.4
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• pp.271-282
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• 2012

We explore the effect of removal of organic ligand on the atomic configurations around oxygen in hydroxyl groups in amorphous silica gel (synthesized through hydrolysis of $SiCl_4$ in diethyl-ether) using high resolution $^{17}O$ solid state NMR spectroscopy. $^1H$ and $^{29}Si$ MAS NMR spectra for amorphous silica gel showed diverse hydrogen environments including water, hydroxyl groups (e.g., hydrogen bonded silanol, isolated silanol), and organic ligands (e.g., alkyl chain) that may interact with surface hydroxyls in the amorphous silica gel, for instance, forming silica-organic ligand complex (e.g., Si-$O{\cdots}R$). These physically and chemically adsorbed organic ligands were partly removed by ultrasonic cleaning under ethanol and distilled water for 1 hour. Whereas $^{17}O$ MAS NMR spectra with short pulse length ($0.175{\mu}s$) at 9.4 T and 14.1 T for as-synthesized amorphous silica gel showed the unresolved peak for Si-O-Si and Si-OH structures, the $^{17}O$ MAS NMR spectra with long pulse length ($2{\mu}s$) showed the additional peak at ~0 ppm. The peak at ~0 ppm may be due to Si-OH structure with very fast relaxation rate as coupled to liquid water molecules or organic ligands on the surface of amorphous silica gel. The observation of the peak at ~0 ppm in $^{17}O$ MAS NMR spectra for amorphous silica gel became more significant as the organic ligands were removed. These results indicate that the organic ligands on the surface of amorphous silica gel interact with oxygen atoms in Si-OH and provide the information about atomic structure of silanol and siloxane in amorphous silica gel. The current results could enhance the understanding of dehydration mechanism of diverse silicates, which is known as atomic scale origins of intermediate depth (approximately, 70~300 km) earthquakes in subduction zone.

• Journal of the Korean Ceramic Society
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• v.52 no.2
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• pp.108-113
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• 2015

In an effort to evaluate the practicability of an imprinting technique for amorphous chalcogenide film in Ge-based compositions, we investigate the deformation behavior of the surface of amorphous $GeSe_2$ film deposited via a thermal evaporation route according to varying static loads applied at elevated temperatures. We observe that, under these static loading conditions, crystallization tends to occur on its surface relatively more easily than in As-based $As_2Se_3$ films. As for the present $GeSe_2$ film, higher processing temperatures are required in order to make its surface reflect the given stamp patterns well; however, in this case, its surface becomes partially crystallized in the monoclinic $GeSe_2$ phase. The increased vulnerability of this amorphous $GeSe_2$ film toward surface crystallization under static loading, when compared with the $As_2Se_3$ counterpart, is explained in terms of the topological aspects of its amorphous structure.

• Textile Coloration and Finishing
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• v.20 no.2
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• pp.47-52
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• 2008

Nylon textured yarn is usually manufactured by disk type false twist texturing. Dyeing properties of nylon textured yam have not been studied yet. In this study, dyeing properties of nylon textured yam according to draw ratio out of process parameters were investigated. The fact that microstructure of nylon textured yarn in amorphous region particularly is transformed by draw ratio was confirmed indirectly by measurement of dyeing rate because dyeing rate was affected by the structure of amorphous region. Dyeing rate at draw ratio 1.29 was the lowest because the higher draw ratio increase amorphous orientation and disturb dye diffusion into amorphous region. The microstructure according draw ratio was indirectly confirmed by 5% strength, tenacity, elongation. But difference in K/S value and fastness was insignificant.