Browse > Article
http://dx.doi.org/10.4313/JKEM.2014.27.5.282

Effect of Deposition Temperature on the Electrical Performance of SiZnSnO Thin Film Transistors Fabricated by RF Magnetron Sputtering  

Ko, Kyung Min (Department of Semiconductor Engineering, Cheongju University)
Lee, Sang Yeol (Department of Semiconductor Engineering, Cheongju University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.27, no.5, 2014 , pp. 282-285 More about this Journal
Abstract
We have investigated the structural and electrical properties of Si-Zn-Sn-O (SZTO) thin films deposited by RF magnetron sputtering at various deposition temperatures from RT to $350^{\circ}C$. All the SZTO thin fims are amorphous structure. The mobility of SZTO thin film has been changed depending on the deposition temperature. SZTO thin film transistor shows mobility of 8.715 $cm^2/Vs$ at room temperature. We performed the electrical stress test by applying gate and drain voltage. SZTO thin film transistor shows good stability deposited at room temperature while showing poor stability deposited at $350^{\circ}C$. As a result, the electrical performance and stability have been changed depending on deposition temperature mainly because high deposition temperature loosened the amorphous structure generating more oxygen vacancies.
Keywords
RF magnetron sputtering; Transistor; Stability; Oxygen vacancy; Amorphous structure;
Citations & Related Records
연도 인용수 순위
  • Reference
1 K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature, 432, 488 (2004).   DOI   ScienceOn
2 E. G. Chong, Y. S. Chun, and S. Y. Lee, Electrochem. Solid State Lett., 14, H96 (2011).   DOI   ScienceOn
3 E. Fortunato, A. Pimentel, A. Goncalve, A. Marques, and R. Martins, Thin Solid Films, 502, 104 (2006).   DOI   ScienceOn
4 B. D. Ahn, J. H. Kim, H. S. Kang, C. H. Lee, S. H. Oh, K. W. Kim, G. E. Jang, and S. Y. Lee, Thin Solid Films, 516, 1382 (2008).   DOI   ScienceOn
5 D. H. Lee, Y. J. Chang, G. S. Herman, and C. H. Chang, Adv. Mater., 19, 843 (2007).   DOI   ScienceOn
6 S. R. Mang, D. H. Yoon, I. Y. Jeon, H. K. Chung, and L. S. Pu, Journal of Vacuum Science & Technology A, 31, 030603 (2013).
7 H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, Thin Solid Films, 516, 1516 (2008).   DOI   ScienceOn
8 J. Y. Choi, S. S. Kim, and S. Y. Lee, Appl. Phys. Lett., 100, 022109 (2012).   DOI   ScienceOn
9 E. G. Chong, Y. S. Chun, and S. Y. Lee, Appl. Phys. Lett., 96, 152102 (2010).   DOI   ScienceOn
10 D. C. Paine, T. Whitson, D. Janiac, R. Beresford, C. O. Yang, and B. Lewis, J. Appl. Phys., 85, 8445 (1999).   DOI