• Current Photovoltaic Research
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• v.7 no.1
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• pp.9-14
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• 2019

Carrier selective solar cell structure has allured curiosity of photovoltaic researchers due to the use of wide band gap transition metal oxide (TMO). Distinctive p/n-type character, broad range of work functions (2 to 7 eV) and risk free fabrication of TMO has evolved new concept of heterojunction intrinsic thin layer (HIT) solar cell employing carrier selective layers such as $MoO_x$, $WO_x$, $V_2O_5$ and $TiO_2$ replacing the doped a-Si layers on either front side or back side. The p/n-doped hydrogenated amorphous silicon (a-Si:H) layers are deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD), which includes the flammable and toxic boron/phosphorous gas precursors. Due to this, carrier selective TMO is gaining popularity as analternative risk-free material in place of conventional a-Si:H. In this work hole selective materials such as $MoO_x$, $WO_x$ and $V_2O_5$has been investigated. Recently $MoO_x$, $WO_x$ & $V_2O_5$ hetero-structures showed conversion efficiency of 22.5%, 12.6% & 15.7% respectively at temperature below $200^{\circ}C$. In this work a concise review on few important aspects of the hole selective material solar cell such as historical developments, device structure, fabrication, factors effecting cell performance and dependency on temperature has been reported.

• Korean Journal of Metals and Materials
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• v.47 no.1
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• pp.13-20
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• 2009

This work presents functionally graded coatings (FGC) of hydroxyapatite (HA) and metallic powders on Ti-6Al-4V implants using plasma spray coating method. HA has been the most frequently used coating material due to its excellent compatibility with human bones. However, because of the abrupt changes in thermomechanical properties between HA and the metallic implant across an interface, and residual stress induced on cooling from coating temperture to room temperature, debonding at the interface occurs in use sometimes. In this work, FGC of HA and Ti or Ti-alloy powders is made to mitigate the abrupt property changes at the interface and the effect of FGC on residual stress release is investigated by evaluating the mechanical bond strength between the implant and the HA coating layers. Thermal annealing is done after coating in order to crystallize the HA coating layer which tends to have amorphous structure during thermal spray coating. The effects of types and compositional ratio of metallic powders in FGC and annealing conditions on the bond strength are also evaluated by strength tests and the microstructure analysis of coating layers and interfaces. Finally, biocompatibility of the coating layers are tested under ISO 10993-5.

• Nuclear Engineering and Technology
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• v.54 no.8
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• pp.3051-3058
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• 2022

In the present work, untreated Iraqi sand with grain sizes varied between 100 and 200 ㎛ was used to produce a colored glass sample that has shielding features against the low gamma-ray energy. Therefore, a weight of 70-60 wt % sand was mixed with 9-14 wt% B₂O₃, 8-10 wt% Na₂O, 4-6 wt% of CaO, 3-6 wt% Al₂O₃, in addition to 0.3% of Co₂O₃. After melting and annealing the glass sample, the X-ray diffraction spectrometry was applied to affirm the amorphous phase of the fabricated glass samples. Moreover, the X-ray dispersive energy spectrometry was used to measure the chemical composition, and the MH-300A densimeter was applied to measure the fabricated sample's density. The Makishima-Makinzie model was applied to predict the mechanical properties of the fabricated glass. Besides, the Monte Carlo simulation was used to estimate the fabricated glass sample's radiation shielding capacity in the low-energy region between 22.1 and 160.6 keV. Therefore, the simulated linear attenuation coefficient changed between 10.725 and 0.484 cm^-1, raising the gamma-ray energy between 22.1 and 160.6 keV. Also, other shielding parameters such as a half-value layer, pure lead equivalent thickness, and buildup factors were calculated.

• Proceedings of the Korean Society of Plant Pathology Conference
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• 2003.10a
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• pp.137.2-138
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• 2003

The commercial cultivars of red pepper were screened against Tobacco mosaic virus (TMV), Pepper mild mottle virus (PMMoV) and Pepper mottle virus (PepMoV) by seedling test. Tn single infection of TMV or PMMoV, mosaic symptom was produced on the cultivars of 'Cheongyang'and 'Wangshilgun'. However, in cultivars of 'Manilla'and 'Bugang', symptoms were not occurred. In single infection of PepMoV, symptoms of mottle and malformation were produced on the tested cultivars of 'Manilla', 'Bugang', 'Cheongyang'and 'Wangshilgun' In the cultivars of 'Cheongyang'and 'Wangshilgun', synergistic symptoms of stunt and lethal death were induced by mixed infections in the two combinations of TMV+PepMoV and PMMoV+PepMoV. However, in cultivars of 'Manilla'and 'Bugang', synergistic symptom was not occurred as mottle which was milder than that of single infection. Cells were single infected with TMV and PMMoV the cultivars of 'Cheongyang'and 'Wangshilgun', respectively, had typical ultrastructures of tobamovirus as the stacked-band structure and multiple spiral aggregate (SA). Ultrastructures of cell and tissues infected with PepMoV on the cultivars of 'Cheongyang', 'Wangshilgun', 'Manilla'and 'Bugang', the potyvirus inclusions of pinwhills, scrolls, lamminated aggregates and amorphous inclusion were observed. Infected cells with a combination of TMV+PepMoV and PMMoV+PepMoV, the virus particles and inclusions of the two different viruses were found only mixed infection in the same cytoplasm and the amounts of viruses in mixed infections were abundant than in single infection. The angled-layer aggregates (ALA) was observed in the cells infected mixedly with TMV and PepMoV

• Journal of Sensor Science and Technology
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• v.33 no.1
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• pp.56-61
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• 2024

The quality of the display can be managed by effectively managing the temperature generated by the panel during use. Conventional display panels rely on an external reference resistor for temperature monitoring. However, this approach is easily affected by external factors such as temperature variations from the driving circuit and chips. These variations reduce reliability, causing complicated mounting owing to the external chip, and cannot monitor the individual pixel temperatures. However, this issue can be simply and efficiently addressed by integrating temperature sensors during the display panel manufacturing process. In this study, we fabricated and analyzed a temperature sensor integrated into an a-IGZO (amorphous indium-gallium-zinc-oxide) TFT array that was to precisely monitor temperature and prevent the deterioration of OLED display pixels. The temperature sensor was positioned on top of the oxide TFT. Simultaneously, it worked as a light shield layer, contributing to the reliability of the oxide. The characteristics of the array with integrated temperature sensors were measured and analyzed while adjusting the temperature in real-time. By integrating a temperature sensor into the TFT array, monitoring the temperature of the display became easier and more accurate. This study could contribute to managing the lifetime of the display.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.528-537
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• 2008

60 nm and 20 nm thick hydrogenated amorphous silicon(a-Si:H) layers were deposited on 200 nm $SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by an e-beam evaporator. Finally, 30 nm-Ni/(60 nm and 20 nm) a-Si:H/200 nm-$SiO_2$/single-Si structures were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 40 sec. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy(FE-SEM), transmission electron microscopy(TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide from the 60 nm a-Si:H substrate showed low sheet resistance from $400^{\circ}C$ which is compatible for low temperature processing. The nickel silicide from 20 nm a-Si:H substrate showed low resistance from $300^{\circ}C$. Through HRXRD analysis, the phase transformation occurred with silicidation temperature without a-Si:H layer thickness dependence. With the result of FE-SEM and TEM, the nickel silicides from 60 nm a-Si:H substrate showed the microstructure of 60 nm-thick silicide layers with the residual silicon regime, while the ones from 20 nm a-Si:H formed 20 nm-thick uniform silicide layers. In case of SPM, the RMS value of nickel silicide layers increased as the silicidation temperature increased. Especially, the nickel silicide from 20 nm a-Si:H substrate showed the lowest RMS value of 0.75 at $300^{\circ}C$.

• The Journal of Korean Academy of Prosthodontics
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• v.47 no.1
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• pp.39-45
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• 2009

Statement of problem: Recently precalcification treatment has been studied to shorten the period of the implant. Purpose: This study was performed to evaluate the effect of precalcification treatment of $TiO_2$ Nanotube formed on Ti-6Al-4V Alloy. Material and methods: Specimens of $20{\times}10{\times}2\;mm$ in dimensions were polished sequentially from #220 to #1000 SiC paper, ultrasonically washed with acetone and distilled water for 5 min, and dried in an oven at $50^{\circ}C$ for 24 hours. The nanotubular layer was processed by electrochemical anodic oxidation in electrolytes containing 0.5 M $Na_2SO_4$ and 1.0 wt% NaF. Anodization was carried out using a regulated DC power supply (Kwangduck FA, Korea) at a potential of 20 V and current density of $30\;㎃/cm_2$ for 2 hours. Specimens were heat-treated at $600^{\circ}C$ for 2 hours to crystallize the amorphous $TiO_2$ nanotubes, and precalcified by soaking in $Na_2HPO_4$ solution for 24 hours and then in saturated $Ca(OH)_2$ solution for 5 hours. To evaluate the bioactivity of the precalcified $TiO_2$ nanotube layer, hydroxyapatite formation was investigated in a Hanks' balanced salts solution with pH 7.4 at $36.5^{\circ}C$ for 2 weeks. Results: Vertically oriented amorphous $TiO_2$ nanotubes of diameters 48.0 - 65.0 ㎚ were fabricated by anodizing treatment at 20 V for 2 hours in an 0.5 M $Na_2SO_4$ and 1.0 NaF solution. $TiO_2$ nanotubes were composed with strong anatase peak with presence of rutile peak after heat treatment at $600^{\circ}C$. The surface reactivity of $TiO_2$ nanotubes in SBF solution was enhanced by precalcification treatment in 0.5 M $Na_2HPO_4$ solution for 24 hours and then in saturated $Ca(OH)_2$ solution for 5 hours. The immersion in Hank's solution for 2 weeks showed that the intensity of $TiO_2$ rutile peak increased but the surface reactivity decreased by heat treatment at $600^{\circ}C$. Conclusion: This study shows that the precalcified treatment of $TiO_2$ Nanotube formed on Ti-6Al-4V Alloy enhances the surface reactivity.

• Journal of the Korean Magnetics Society
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• v.15 no.6
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• pp.315-319
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• 2005

To obtain low switching field ($H_{SW}$) we introduced amorphous ferromagnetic $Co_{70.5}Fe_{4,5}Si_{15}B_{10}$ single and synthetic antiferromagnet (SAF) free layers in magnetic tunnel junctions (MTJs). The switching characteristics for MTJs with structures $Si/SiO_2/Ta$ 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/CoFeSiB 7 or CoFeSiB (t)/Ru 1.0/CoFeSiB (7-t)/Ru 60 (in nm) were investigated and compared to MTJs with $Co_{75}Fe_{25}$ and $Ni_{80}Fe_{20}$ free layers. CoFeSiB showed a lower saturation magnetization of $560 emu/cm^3$ and a higher anisotropy constant of $2800\;erg/cm^3$ than CoFe and NiFe, respectively. An exchange coupling energy ($J_{ex}$) of $-0.003erg/cm^2$ was observed by inserting a 1.0 nm Ru layer in between CoFeSiB layers. In the CoFeSiB single and SAF free layer MTJs, it was frond that the size dependence of the $H_{SW}$ originated from the lower $J_{ex}$ experimentally and by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. The CoFeSiB SAF structures showed lower $H_{SW}$ than that of NiFe, CoFe and CoFeSiB single structures. The CoFeSiB SAF structures were proved to be beneficial far the switching characteristics such as reducing the coercivity and increasing the sensitivity in micrometer to submicrometer-sized elements.

• Korean Journal of Soil Science and Fertilizer
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• v.37 no.5
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• pp.293-303
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• 2004

This experiment was conducted to investigate the direction or orientation of clay particle movement in argillic horizons (Bt) for clarifying the soil classification of soils. Soil samples were collected from 22 soil series containing Bt horizons. Physical and chemical characteristics and mineral and chemical compositions of clay in the soils were analyzed. Micoromorphological characteristics of the Bt horizons were also investigated with thin sections of the natural undisturbed and oriented soil samples. Average clay content in the Bt horizons was 28% and 1.33 times higher comparing to that in the surface layer. Soil pH was higher, but cation exchange capacity (CEC) and organic matter content were lower in Bt horizon than those in the surface layer. There was an evidence of clay accumulation in Bt horizons of all soil series examined except Bangog series. Although there was an increase of clay content in the horizons in Bangog series, the clay was not originated from illuviation process. The translocation of clay was in the order of an 2:1 expandable clay minerals > 2:1 non-expandable clay minerals > 1:1 clay minerals. The illuvial substances in argillic horizon were composed with clay, amorphous iron and opaque mineral. The micoromorphological features of Bt horizon were void coating, channel infilling and grain coating. There was an apparent boundary between clay coating and the groundmass in residuum and colluvium, but Bt horizon of alluvium was composed of a skew plane amputated by the physical operation.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.81-81
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• 2010

유리기판위에 큰 결정입자를 갖는 실리콘 (폴리 실리콘) 박막을 제조하는 것은 가격저가화 및 대면적화 측면 같은 산업화의 높은 잠재성을 가지고 있기 때문에 그동안 많은 관심을 가지고 연구되어 오고 있다. 다양한 방법을 이용하여 다결정 실리콘 박막을 만들기 위해 노력해 오고 있으며, 태양전지에 응용하기 위하여 연속적이면서 10um이상의 큰 입자를 갖는 다결정 실리콘 씨앗층이 필요하며, 고속증착을 위해서는 (100)의 결정성장방향 등 다양한 조건이 제시될 수 있다. 다결정 실리콘 흡수층의 품질은 고품질의 다결정 실리콘 씨앗층에서 얻어질 수 있다. 이러한 다결정 실리콘의 에피막 성장을 위해서는 유리기판의 연화점이 저압 화학기상증착법 및 아크 플라즈마 등과 같은 고온기반의 공정 적용의 어려움이 있기 때문에 제약 사항으로 항상 문제가 제기되고 있다. 이러한 관점에서 볼때 유리기판위에 에피막을 성장시키는 방법으로 많지 않은 방법들이 사용될 수 있는데 전자 공명 화학기상증착법(ECR-CVD), 이온빔 증착법(IBAD), 레이저 결정화법(LC) 및 펄스 자석 스퍼터링법 등이 에피 실리콘 성장을 위해 제안되는 대표적인 방법으로 볼 수 있다. 이중에서 효율적인 관점에서 볼때 IBAD는 산업화측면에서 좀더 많은 이점을 가지고 있으나, 박막을 형성하는 과정에서 큰 에너지 및 이온크기의 빔 사이즈 등으로 인한 표면으로의 damages가 일어날 수 있어 쉽지 않는 방법이 될 수 있다. 여기에서는 이러한 damage를 획기적으로 줄이면서 저온에서 결정화 시킬 수 있는 cold annealing법을 소개하고자 한다. 이온빔에 비해서 전자빔의 에너지와 크기는 그리드 형태의 렌즈를 통해 전체면적에 조사하는 것을 쉽게 제어할 수 있으며 이러한 전자빔의 생성은 금속 필라멘트의 열전자가 아닌 Ar플라즈마에서 전자의 분리를 통해 발생된다. 유리기판위에 흡수층 제조연구를 위해 DC 및 RF 스퍼터링법을 이용한 비정질실리콘의 박막에 대하여 두께별에 따른 밴드갭, 캐리어농도 등의 변화에 대하여 조사한다. 최적의 조건에서 비정질 실리콘을 2um이하로 증착을 한 후, 전자빔 조사를 위해 1.4~3.2keV의 다양한 에너지세기 및 조사시간을 변수로 하여 실험진행을 한 후 단면의 이미지 및 결정화 정도에 대한 관찰을 위해 SEM과 TEM을 이용하고, 라만, XRD를 이용하여 결정화 정도를 조사한다. 또한 Hall효과 측정시스템을 이용하여 캐리어농도, 이동도 등을 각 변수별로 전기적 특성변화에 대하여 분석한다. 또한, 태양전지용 흡수층으로 응용을 위하여 dark전도도 및 photo전도도를 측정하여 광감도에 대한 결과가 포함된다.