• KIEE International Transactions on Electrophysics and Applications
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• 제4C권4호
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• pp.185-189
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• 2004

The temporal variation of a secondary electron emission coefficient (${\gamma}$ coefficient) of hydrogenated amorphous silicon (a-Si:H) was investigated in a dc silane plasma. Estimated ${\gamma}$ coefficients have a value of 2.73 ${\times}$ 10$^{-2}$ on the pure aluminum electrode and 1.5 ${\times}$ 10$^{-3}$ after 2 hours deposition of -Si:H thin films on a cathode. It showed an abrupt decrease for about 30 minutes before saturation. The variation of the ${\gamma}$ coefficient was estimated as a function of the thin film thickness, and the film thickness was about 80 nm after 30 minutes deposition time. These results are compared with the results of a computer simulation for ion penetration into a cathode.

• Transactions on Electrical and Electronic Materials
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• 제14권1호
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• pp.16-19
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• 2013

Frequency filters with various filtering wavelengths were used in the photoelectric characterization of hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and the experimental results were described and analyzed in terms of the photon energy spectral characteristics calculated from the integration of the photon energy and the spectral intensity of transmitted backlight through the filters at each wavelength. From the comparison of the photocurrents and the calculated photon energy spectrums for the filtered ranges of wavelength, it was possible to conclude that the photocurrents are closely related to the photon energy spectrums of the backlight.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.89-93
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• 1995

Effects of hydrogenation in amorphous silicon rile growths on Solid Phase Crystallization (SPC) was investigated using x-ray diffractometry, energy dispersive Spectroscopy, and Raman spectrum. Interdiffusion of barium(Ba) and aluminum(Al) compounds of corning substrate was observed in both of rf sputtering and LFCVD films under the low temperature(580$^{\circ}C$) annealing. Low degree of crystallinity resulted from the interdiffusion was obtained. Highly applicable degree of crystallinity was obtained through the mechanical damage induced surface activation on amorphous silicon films. X-ray diffraction intensity of (111) orientation was used to characterize the degree of crystallinity of SPC. Nucleation and growth rate in SPC could be controllable through the employed surface treatment. IIydrogenated LPCVD films showed the superior crystallinity to non-hydrogenated sputtering films. Insignificant effects of activation treatment in sputtered film was of activation treatment in sputtered film was observed on SPC.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.112-113
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• 2006

In this paper. we investigated a characteristic of holographic grating data erasure with non-polarized beam at amorphous chalcogenide As-Ge-Se-S thin film. A sample of holographic grating data was formed with DPSS laser for setup. Then, the erasure process was performed with He-Ne laser vertically at sample. As-Ge-Se-S(single layer). Ag/As-Ge-Se-S(double layer) and As-Ge-Se-S/Ag/As-Ge-Se-S(multi-layer) are manufactured to compare their characteristic of erasure.

• 한국재료학회지
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• 제12권4호
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• pp.279-282
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• 2002

The effect of field annealing on the velocity changes of magneto surface acoustic wave (MSAW) devices has been investigated for deposited $(Fe_{1-x}Co_x)_{89}Zr_{11}$ (x = 0~1.0) amorphous films. By means of two step field annealing at $195^{\circ}C$ for 10 minute in the magnetic field of 130 Oe, the MSAW device with x=0.4 film among the devices showed the superior velocity change of 0.1 %. This gigantic value was obtained in the DC bias field of 40 Oe at the exciting frequency of 8.7 MHz. It was confirmed that such behavior was due to the variation of differential permeability caused by an optimal stress within the magnetic film.

• Journal of Magnetics
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• 제18권2호
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• pp.86-89
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• 2013

This paper shows a new effective approach to measure crystallization temperature of soft magnetic underlayer (SUL) for next generation of heat assisted perpendicular recording media. This approach uses temperature dependent reflectivity, which shows a clear jump when samples are crystallized. To achieve this measurement, an optical system is set up using hot plate and infrared laser. Reflectivity of SUL $(Co_{70}Fe_{30})_{92}Ta_3Zr_5$ shows a clear jump at its amorphous-crystalline transition temperature. Experiment results show this effect is clear in infrared region, and is weak for visible light.

• 반도체디스플레이기술학회지
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• 제15권1호
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• pp.52-55
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• 2016

GZO film was prepared on p-type Si wafer and then annealed at various temperatures in an air conditions to research the bonding structures in accordance with the annealing processes. GZO film annealed in an atmosphere showed the various bonding structure depending on annealing temperatures and oxygen gas flow rate during the deposition. The difference of bonding structures of GZO films made by oxygen gas flows between 18 sccm and 22 sccm was so great. The bonding structures of GZO films made by oxygen gas flow of 18 sccm were showed the crystal structure, but that of 22 sccm were showed the amorphous structure in spite of after annealing processes. The bonding structure of GZO as oxide-semiconductor was observed the trend of becoming amorphous structures at the temperature of $200^{\circ}C$. Therefore, the characteristics of oxide semiconductor are needed to research the variation near the annealing at $200^{\circ}C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1277-1279
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• 1993

As a highly information-oriented society developes, various kinds of amorphous semiconductor devices, such as solar cells, electrographic printers, image sensors, and flat-panel televisions, have been developed as man/machine interfaces. This paper proposed the laser CVD techniques to deposit hydrogenated amorphous silicon thin film on glass or dielectric substrate at low temperatures. Varying the deposition conditions, we examined optical and electrical charateristics of a-Si:H film deposited by Laser CVD.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1331-1332
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• 2007

In the present works, we investigate the thermal characteristics on Ag/$As_{2}S_{3}$ and Ag/$As_{40}Ge_{10}Se_{15}S_{35}$ amorphous chalcogenide thin film structure for PMC (Programmable Metallization Cell).As the results of resistance change with the temperature on Ag/$As_{40}Ge_{10}Se_{15}S_{35}$ amorphous chalcogenide thin film, the resistance was abruptly dropped from the initial resistance of 1.32 M ${\Omega}$ to the saturated value of 800 ${\Omega}$ at $203^{\circ}C$. On the other hand, the resistance increased to 1.3 $M{\Omega}$ at $219^{\circ}C$.

• 한국태양에너지학회 논문집
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• 제28권4호
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• pp.62-67
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• 2008

In this study, we analyze the electrical characteristics of amorphous silicon thin film photovoltaic module which are installed about 5 years ago. Four modules from PV system are extracted and measured the maximum power change ratio using solar simulator(Class A). Also, infrared camera is used to get thermal distribution characteristics of system. The external appearance change is compared with initial module by naked eye examination. Through this experiment, 31% maximum output power drop is observed. The detail description is specified as the following paper.