A Study on Amorphous Silicon Film Deposition by Laser CVD

Laser CVD에 의한 비정질 실리콘 박막 형성에 관한 연구

  • Yoo, H.S. (Dept. of Electrical Eng. Korea Univ.) ;
  • Park, G.Y. (Dept. of Electrical Eng. Korea Univ.) ;
  • Ryou, J.H. (Dept. of Electrical Eng. Korea Univ.) ;
  • Cho, T.H. (Dept. of Electrical Eng. Korea Univ.) ;
  • Kim, J.H. (Dept. of Electrical Eng. Korea Univ.) ;
  • Sung, Y.K. (Dept. of Electrical Eng. Korea Univ.)
  • 유환성 (고려대학교 전기공학과) ;
  • 박근영 (고려대학교 전기공학과) ;
  • 류지호 (고려대학교 전기공학과) ;
  • 조태훈 (고려대학교 전기공학과) ;
  • 김종관 (고려대학교 전기공학과) ;
  • 성영권 (고려대학교 전기공학과)
  • Published : 1993.07.18

Abstract

As a highly information-oriented society developes, various kinds of amorphous semiconductor devices, such as solar cells, electrographic printers, image sensors, and flat-panel televisions, have been developed as man/machine interfaces. This paper proposed the laser CVD techniques to deposit hydrogenated amorphous silicon thin film on glass or dielectric substrate at low temperatures. Varying the deposition conditions, we examined optical and electrical charateristics of a-Si:H film deposited by Laser CVD.

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