• Polymer Science and Technology
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• v.15 no.3
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• pp.296-302
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• 2004

최근 분자들의 자기조립 현상을 나노-바이오 소자 개발에 응용하는 연구가 활발히 진행되고 있으며, 이러한 응용을 위한 대표적인 자기조립체로는 양친성 계면활성제, 블록공증합체, 콜로이드와 초분자체를 들 수 있다. 대부분의 콜로이드가 구형 모양으로 vander Waals interaction에 의하여 3-D결정 (crystal) 형태의 자기조립구조를 형성하는 반면에, 콜로이드를 제외한 대부분의 자기조립체는 적정 조건에서 액정 (liquid crystals), 결정 (crystal) 및 무정형 (amorphous)을 형성한다. 적용하고자 하는 응용의 범위와 재료의 특성에 따라서 각 상태 (phase)를 이용할 수 있으나, 액정상을 이용하는 것과 결정상을 이용하는 경우가 대부분이다. (중략)

• Proceedings of the Korean Fiber Society Conference
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• 2001.10a
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• pp.392-396
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• 2001

Natural silk is formed by two proteins ; the crystalline fibroin (inside the silk thread) and amorphous sericin (as a tube outside the thread). The degumming process is used th eliminate the external sericin prior to dyeing ： generally it makes use of soaps at pH 10. (omitted)

• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.166-166
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• 2006

• Applied Microscopy
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• v.41 no.4
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• pp.229-234
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• 2011

The occurrence of nuclear inclusions has been reported in various plant groups from primitive ferns to higher flowering plants. Their presence within a group seems to be randomly distributed without any phylogenetic relationships among species. According to the current survey, nuclear inclusions have been widely documented in more than several hundreds of species from various families of plants. The morphology and internal structures of nuclear inclusions are diverse and at least five types of inclusions develop within plant nuclei; amorphous, crystalline, fibrous, lamellar, and tubular form. Among these types, crystalline inclusions are the ones that are the most frequently reported. The inclusions are not bound by membranes and appear to be related to the nucleoli, either spatially by a close association or by an inverse relationship in size during development. The idea that nuclear inclusions are of a proteinaceous nature has been widely accepted. Further link to nucleolar activity as a protein storing site has also been suggested based on the association between the nucleolus and nuclear inclusions. Various investigations of nuclear inclusions have revealed more information about their structural features, but characterizing their precise function and subunit complexity employing molecular analysis and 3-D reconstruction remains to be elucidated. Tilting and tomography of serial sections with appropriate image processing can provide valuable information on their subunit(s). The present review summarizes discussion about different nuclear inclusions in plants from previous works, giving special attention to their fine, ultrastructural morphology, function, and origin.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.21-21
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• 2010

(Ba,Sr)$TiO_3$ (BST) thin film with a perovskite structure has potential for the practical application in various functional devices such as nonvolatile-memory components, capacitor, gate insulator of thin-film transistors, and electro-optic devices for display. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below $600^{\circ}C$. For the purpose of integrating BST thin film directly into a Si-based read-out integrated circuit (ROIC), it is necessary to process the BST film below $400^{\circ}C$. The microstructural and electrical properties of low-temperature crystallized BST film were studied. The BST thin films have been fabricated at $350^{\circ}C$ by UV-assisted rapidly thermal annealing (RTA). The BST films are in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss, low leakage current density, and high breakdown voltage. Photoexcitation of the organics contained in the sol-gel-derived films by high-intensity UV irradiation facilitates elimination of the organics and formation of the single-crystalline phase films at low temperatures. The amorphous BST thin film was transformed to a highly (h00)-oriented perovskite structure by high oxygen pressure processing (HOPP) at as low as $350^{\circ}C$. The dielectric properties of BST film were comparable to (or even better than) those of the conventionally processed BST films prepared by sputtering or post-annealing at temperature above $600^{\circ}C$. When external pressure was applied to the well-known contractive BST system during annealing, the nucleation energy barrier was reduced; correspondingly, the crystallization temperature decreased. The UV-assisted RTA and HOPP, as compatible with existing MOS technology, let the BST films be integrated into radio-frequency circuit and mixed-signal integrated circuit below the critical temperature of $400^{\circ}C$.

• Journal of Preventive Medicine and Public Health
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• v.28 no.1 s.49
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• pp.1-12
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• 1995

Diatomaceous earth, quarried from the remains of aquatic plants deposited millions of years ago, continues to be a very important raw material with many industrial uses. In its natural state, diatomaceous earth is an amorphous silica with no crystalline pattern. For many uses, however, it is calcinated and calcination converts a portion of the amorphous silica to a crystalline form, cristobalite which is far more fibrogenic. In a factory which produces calcinated diatomaceous earth, seven workers were proved as pneumoconiosis on 1991 and 1992. Authors reviewed medical chart and current status of them. Authors also examined thirty one subjects from the factory with questionnaire, physical examination, spirometry and chest radiography on August 13th 1993. The radiographs were independently interpreted by two radiologists and their findings were classified by International Classification of Radiography of Pneumoconiosis(ILO, 1980). Total and respirable dust of diatomaceous earth were measured on October 1993. The results were as follows; 1. Of 31 workers, 6 (19.4%) were diagnosed as diatomaceous earth pneumoconiosis. There was an increasing tendency in prevalence of pneumoconiosis as the duration of dust exposure gets longer. 2. There were no significant differences in age, smoking rate, alcohol drinking rate, and pulmonary function test results between cases and non-cases. 3. The means of total dust exposures at flour manufacturing, fire brick grinding and packaging, ceramic raws packaging processes exceeded Korean and ACGIH standards, $10mg/m^3$. Above results suggest that engineering controls, periodic environmental and medical surveillance are important for preventing pneumoconiosis in the diatomite factory.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.313-313
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• 2013

For high-performance TFT (Thin film transistor), poly-crystalline semiconductor thin film with low resistivity and high hall carrier mobility is necessary. But, conventional SPC (Solid phase crystallization) process has disadvantages in fabrication such as long annealing time in high temperature or using very expensive Excimer laser. On the contrary, MIC (Metal-induced crystallization) process enables semiconductor thin film crystallization at lower temperature in short annealing time. But, it has been known that the poly-crystalline semiconductor thin film fabricated by MIC methods, has low hall mobility due to the residual metals after crystallization process. In this study, Ni metal was shallow implanted using PIII&D (Plasma Immersion Ion Implantation & Deposition) technique instead of depositing Ni layer to reduce the Ni contamination after annealing. In addition, the effect of external magnetic field during annealing was studied to enhance the amorphous silicon thin film crystallization process. Various thin film analytical techniques such as XRD (X-Ray Diffraction), Raman spectroscopy, and XPS (X-ray Photoelectron Spectroscopy), Hall mobility measurement system were used to investigate the structure and composition of silicon thin film samples.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.313-320
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• 2011

100 nm-thick hydrogenated amorphous silicon $({\alpha}-Si:H)$ films were deposited on a glass and glass/30 nm Ni substrates by inductively-coupled plasma chemical vapor deposition (ICP-CVD) at temperatures ranging from 100 to $550^{\circ}C$. The sheet resistance, microstructure, phase transformation and surface roughness of the films were characterized using a four-point probe, AFM (atomic force microscope), TEM (transmission electron microscope), AES (Auger electron spectroscopy), HR-XRD(high resolution X-ray diffraction), and micro-Raman spectroscopy. A nano-thick NiSi phase was formed at substrate temperatures >$400^{\circ}C$. AFM confirmed that the surface roughness did not change as the substrate temperature increased, but it increased abruptly to 6.6 nm above $400^{\circ}C$ on the glass/30 nm Ni substrates. HR-XRD and micro-Raman spectroscopy showed that all the Si samples were amorphous on the glass substrates, whereas crystalline silicon appeared at $550^{\circ}C$ on the glass/30 nm Ni substrates. These results show that crystalline NiSi and Si can be prepared simultaneously on Ni-inserted substrates.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.473-479
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• 2011

In this paper, we have compared amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) with the nano-crystalline embedded-IGZO ($N_c$-embedded-IGZO) TFT fabricated by solid-phase crystallization (SPC) technique. The field effect mobility (${\mu}_{FE}$) of $N_c$-embedded-IGZO TFT was 2.37 $cm^2/Vs$ and the subthreshold slope (S-factor) was 0.83 V/decade, which showed lower performance than those of a-IGZO TFT (${\mu}_{FE}$ of a-IGZO was 9.67 $cm^2/Vs$ and S-factor was 0.19 V/decade). This results originated from generation of oxygen vacancies in oxide semiconductor and interface between gate insulator and semiconductor due to high temperature annealing process. However, the threshold voltage shift (${\Delta}V_{TH}$) of $N_c$-embedded-IGZO TFT was 0.5 V, which showed 1 V less shift than that of a-IGZO TFT under constant current stress during $10^5$ s. This was because there were additionally less increase of interface trap charges in Nc-embedded-IGZO TFT than a-IGZO TFT.

• Journal of the Korean Ceramic Society
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• v.40 no.12
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• pp.1213-1219
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• 2003

Porous ceramics for microoganism carriers were prepared with amorphous alumina and pore formers by hydrothermal reaction, burn-out and wash-out method. Activated carbon with average size of 67,222, and 405 $\mu\textrm{m}$, organic polymer and inorganic salt were used as pore formers. Specimens were hydrothermally treated at 200$^{\circ}C$ for 24 h, heat-treated at 650$^{\circ}C$ for 5 h, and washed out at 80$^{\circ}C$ for 48 h. The formation of crystalline phase, porosity, pore size distribution and compressive strength were measured. The specimen with activated carbon was transformed to boehmite phase, but organic polymer and inorganic salt inhibited the aquohydroxoy complex gel and crystalline formation. The porous ceramics for microoganism carriers using activated carbon as a pore formers was successfully prepared, which is composed of ${\gamma}$-alumina phase with porosity of above 70 vol% and the compressive strength of 40 kgf/$\textrm{cm}^2$.